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STGB25N36LZAG

STMicroelectronics

STGB25N36LZAG by STMicroelectronics

STGB25N36LZAG IGBT from STMicroelectronics features a max VCEsat of 1.25V, supports up to 25A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for automotive ignition applications, it ensures reliable performance with built-in TVS diode. Its compact surface mount design enhances space efficiency in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,424 parts In-Stock

1+ parts

-

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4,424

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Anansix

USA . 2,780 parts In-Stock

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2,780

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Vyrian

USA . 2,498 parts In-Stock

1+ parts

-

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2,498

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 53 parts In-Stock

1+ parts

$1.220

100+ parts

-

1k+ parts

$1.098

10k+ parts

-

53

$1.220

-

$1.098

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MKK Technologies

India . 1,412 parts In-Stock

1+ parts

$2.294

100+ parts

-

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1,412

$2.294

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DigiPath Technology Company

USA . 1,412 parts In-Stock

1+ parts

$2.294

100+ parts

-

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1,412

$2.294

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Microchip USA

USA . 5,424 parts In-Stock

1+ parts

$7.495

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5,424

$7.495

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AZTECH Wire

Italy . 107 parts In-Stock

1+ parts

$8.650

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107

$8.650

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Component Stockers USA

USA . 8,619 parts In-Stock

1+ parts

$17.010

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8,619

$17.010

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Parana Technologies

USA . 2,229 parts In-Stock

1+ parts

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100+ parts

$1.459

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2,229

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$1.459

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Corphita

USA . 298 parts In-Stock

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298

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Overview

Elevate your automotive ignition systems with the STGB25N36LZAG from STMicroelectronics, a leader in semiconductor innovation. This N-channel IGBT combines reliability and efficiency, featuring a built-in TVS diode and resistor for enhanced performance. Designed with high power dissipation capabilities and exceptional thermal stability, it ensures optimal operation even under extreme conditions. Trust in STMicroelectronics' commitment to quality and revolutionize your applications today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures lightweight and durable construction, making it suitable for various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel configuration allows for efficient switching performance, contributing to higher efficiency in power applications.

Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

The built-in TVS diode and resistor improve reliability and reduce circuit complexity, providing enhanced protection against voltage spikes.

Transistor Application: AUTOMOTIVE IGNITION

Designed specifically for automotive ignition applications, ensuring optimal performance in demanding automotive environments.

Surface Mount: YES

Surface mount design enables efficient space utilization on PCBs, facilitating easier integration into compact designs.

Maximum VCEsat: 1.25 V

Low VCEsat value results in less power loss during operation, improving overall efficiency and thermal performance.

Package Shape: RECTANGULAR

The rectangular package shape provides a robust structure while allowing for efficient heat dissipation and mounting options.

Terminal Form: GULL WING

Gull wing terminal form allows for secure soldering and reliable connections, enhancing the integrity of the installation.

Nominal Turn Off Time (toff): 14500 ns

A longer turn-off time can be advantageous in applications requiring controlled switching behavior, improving system stability.

No. of Terminals: 2

The two-terminal design simplifies integration and minimizes the footprint on the circuit board, making it user-friendly.

Maximum Power Dissipation (Abs): 150 W

A high power dissipation capacity ensures that the device can handle significant power levels, making it suitable for high-performance applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for efficient space-saving designs, ideal for compact electronic devices.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this IGBT is capable of functioning in demanding environments, ensuring reliability.

Maximum Collector-Emitter Voltage: 385 V

High voltage capability allows for applications in high-voltage circuits, giving it versatility in various systems.

Transistor Element Material: SILICON

Silicon material provides excellent conductivity and thermal performance, ensuring robust electrical characteristics.

Maximum Gate-Emitter Voltage: 16 V

The gate-emitter voltage rating ensures compatibility with standard control voltages, simplifying drive circuit design.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this IGBT is suitable for use in extreme environments, such as automotive and aerospace applications.

Maximum Collector Current (IC): 25 A

High collector current rating allows the IGBT to handle substantial load currents, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 2.1 V

A low threshold voltage indicates ease of driving the IGBT, making it adaptable to a variety of control circuits.

Terminal Position: SINGLE

Single terminal position streamlines PCB design and configuration, enhancing ease of use and installation.

Case Connection: COLLECTOR

Collector connection provided ensures efficient heat dissipation, which is crucial for maintaining performance levels.

Nominal Turn On Time (ton): 4560 ns

A reasonable turn-on time allows for effective modulation of switching speeds, suitable for dynamic applications.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard guarantees reliability and performance in automotive applications, giving confidence in its use.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB25N36LZAG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

385 V

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

16 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

14500 ns

Nominal Turn On Time (ton):

4560 ns

Maximum VCEsat:

1.25 V

Trade Compliance

STGB25N36LZAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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