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STGB30H60DLLFBAG

STMicroelectronics

STGB30H60DLLFBAG by STMicroelectronics

STGB30H60DLLFBAG from STMicroelectronics is a robust N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 2.15V, supports up to 60A collector current, and operates within -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.

Median Price

$3.570

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 990 parts In-Stock

1+ parts

$3.570

100+ parts

$1.631

1k+ parts

$1.233

10k+ parts

$1.163

990

$3.570

$1.631

$1.233

$1.163

Mouser Electronics

USA . 979 parts In-Stock

1+ parts

$3.570

100+ parts

$1.640

1k+ parts

$1.330

10k+ parts

-

979

$3.570

$1.640

$1.330

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,696 parts In-Stock

1+ parts

$2.556

100+ parts

-

1k+ parts

-

10k+ parts

-

4,696

$2.556

-

-

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Vyrian

USA . 5,722 parts In-Stock

1+ parts

-

100+ parts

-

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-

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5,722

-

-

-

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Anansix

USA . 2,505 parts In-Stock

1+ parts

-

100+ parts

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2,505

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Greenchips

USA . 189 parts In-Stock

1+ parts

-

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189

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 181 parts In-Stock

1+ parts

$0.910

100+ parts

-

1k+ parts

$0.819

10k+ parts

-

181

$0.910

-

$0.819

-

MKK Technologies

India . 2,007 parts In-Stock

1+ parts

$1.711

100+ parts

-

1k+ parts

-

10k+ parts

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2,007

$1.711

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-

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DigiPath Technology Company

USA . 2,007 parts In-Stock

1+ parts

$1.711

100+ parts

-

1k+ parts

-

10k+ parts

-

2,007

$1.711

-

-

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Corphita

USA . 912 parts In-Stock

1+ parts

$2.421

100+ parts

-

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912

$2.421

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Microchip USA

USA . 3,327 parts In-Stock

1+ parts

$12.588

100+ parts

-

1k+ parts

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3,327

$12.588

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-

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Parana Technologies

USA . 973 parts In-Stock

1+ parts

-

100+ parts

$1.088

1k+ parts

-

10k+ parts

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973

-

$1.088

-

-

Overview

Unlock the potential of your automotive designs with the STGB30H60DLLFBAG from STMicroelectronics. This high-quality Insulated Gate Bipolar Transistor (IGBT) delivers exceptional performance and reliability, empowering your ignition systems with efficiency and precision. With its robust construction and built-in diode, it ensures optimal power management under demanding conditions. Trust in STMicroelectronics' legacy of innovation to elevate your projects and drive success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protects the IGBT from environmental factors, enhancing its reliability in automotive applications.

Polarity or Channel Type: N-CHANNEL

N-channel configuration allows for higher efficiency and performance, making it ideal for automotive ignition applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and minimizes component count, making it a cost-effective solution for automotive systems.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition, this IGBT offers high reliability and performance under ignition conditions.

Surface Mount: YES

Surface mount capability allows for more compact designs and easier integration into modern electronic assemblies.

Maximum VCEsat: 2.15 V

A low VCEsat means reduced power loss, contributing to better efficiency and thermal performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for effective space utilization on PCB layouts.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering and handling during assembly, improving manufacturing efficiency.

Nominal Turn Off Time (toff): 370 ns

Fast turn-off time enables high-frequency operation, which is advantageous for efficient automotive ignition systems.

No. of Terminals: 2

A simple two-terminal design helps streamline connections and reduces layout complexity in circuits.

Maximum Power Dissipation (Abs): 260 W

High power dissipation capability ensures that the IGBT can handle demanding automotive applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact designs, making it suitable for space-constrained automotive environments.

Maximum Operating Temperature: 175 °C

High operating temperature rating ensures reliable operation in extreme conditions typical of automotive environments.

Maximum Collector-Emitter Voltage: 600 V

A high voltage rating makes this IGBT suitable for a wide range of automotive applications, ensuring safety and performance.

Transistor Element Material: SILICON

Silicon material provides excellent thermal stability and performance under high voltages, ideal for automotive use.

Maximum Gate-Emitter Voltage: 20 V

A gate-emitter voltage of 20 V ensures compatibility with common drive circuits used in automotive applications.

Minimum Operating Temperature: -55 °C

The wide temperature range makes it reliable for operation in diverse environmental conditions, critical for automotive systems.

Maximum Collector Current (IC): 60 A

A high current rating allows the IGBT to handle demanding loads and ensures stable performance in automotive ignition applications.

Maximum Gate-Emitter Threshold Voltage: 2.5 V

A low threshold voltage contributes to efficient switching performance, which is essential in high-frequency applications.

Terminal Position: SINGLE

The single terminal position simplifies design and implementation in various circuit configurations.

Case Connection: COLLECTOR

Collector case connection aids in straightforward circuit design and integration in automotive applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures that this IGBT meets automotive reliability standards, making it a dependable choice for vehicle applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB30H60DLLFBAG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

2.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

370 ns

Maximum VCEsat:

2.15 V

Trade Compliance

STGB30H60DLLFBAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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