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STGP3NB60FD

STMicroelectronics

STGP3NB60FD by STMicroelectronics

STGP3NB60FD by STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,478 parts In-Stock

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3,478

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Anansix

USA . 1,263 parts In-Stock

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1,263

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Digiode

USA . 494 parts In-Stock

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494

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,162 parts In-Stock

1+ parts

$1.359

100+ parts

-

1k+ parts

$1.223

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1,162

$1.359

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$1.223

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MKK Technologies

India . 1,028 parts In-Stock

1+ parts

$2.555

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1,028

$2.555

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DigiPath Technology Company

USA . 1,028 parts In-Stock

1+ parts

$2.555

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1,028

$2.555

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AZTECH Wire

Italy . 893 parts In-Stock

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$18.230

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893

$18.230

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Parana Technologies

USA . 2,092 parts In-Stock

1+ parts

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$1.625

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2,092

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$1.625

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Corphita

USA . 338 parts In-Stock

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338

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Overview

Unlock high-performance efficiency with the STGP3NB60FD from STMicroelectronics—your go-to solution for motor control applications. Renowned for their uncompromising quality and innovation, STMicroelectronics ensures this N-channel IGBT delivers remarkable reliability with rapid switching times and robust power handling. Elevate your designs with a component that promises longevity, superior thermal management, and seamless integration, making it an invaluable asset for engineers and designers alike.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and excellent thermal performance, ensuring the IGBT can withstand challenging operating environments.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically offer better performance in conduction and switching, making them ideal for high-efficiency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances the reliability of applications such as motor control.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, this IGBT enhances efficiency and responsiveness in driving motors.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on printed circuit boards (PCBs), allowing for tighter and more efficient layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and are suitable for high-power applications.

Nominal Turn Off Time (toff): 535 ns

With a fast turn-off time, this IGBT contributes to efficient switching in applications, reducing response time and enhancing performance.

No. of Terminals: 3

The three-terminal design allows for easy integration into various circuit configurations, simplifying the design process.

Maximum Power Dissipation (Abs): 68 W

A high power dissipation capability enables this IGBT to handle substantial power without overheating, improving reliability.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides robust physical support and excellent heat dissipation, which is crucial for high-performance applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable operation in demanding thermal environments, extending the lifespan of the device.

Maximum Collector-Emitter Voltage: 600 V

The high voltage rating allows this IGBT to be used in a wide range of applications, enabling design flexibility.

Transistor Element Material: SILICON

Silicon provides good thermal and electrical properties, leading to effective performance in power devices.

Maximum Gate-Emitter Voltage: 20 V

A high gate-emitter voltage ensures compatibility with various control circuits, enhancing the versatility of applications.

Maximum Collector Current (IC): 6 A

With a maximum collector current of 6 A, this IGBT can drive moderate loads effectively, making it suitable for mid-range applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

A lower threshold voltage enables easier and faster switching, which is essential for efficient power conversion.

Terminal Finish: MATTE TIN

A matte tin terminal finish provides excellent solderability, ensuring reliable connections in various assembly processes.

Terminal Position: SINGLE

A single position design simplifies circuit layouts and reduces the complexity of PCB design.

Nominal Turn On Time (ton): 16.5 ns

This fast turn-on time enhances the switching performance, making it ideal for applications requiring rapid response times.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP3NB60FD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

535 ns

Nominal Turn On Time (ton):

16.5 ns

Trade Compliance

STGP3NB60FD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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