Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STGP3NB60FD by STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.
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$1.359
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$2.555
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AZTECH Wire
$3.920
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Parana Technologies
$1.625
Corphita
This material provides durability and excellent thermal performance, ensuring the IGBT can withstand challenging operating environments.
N-channel IGBTs typically offer better performance in conduction and switching, making them ideal for high-efficiency applications.
The built-in diode simplifies circuit design and enhances the reliability of applications such as motor control.
Designed specifically for motor control applications, this IGBT enhances efficiency and responsiveness in driving motors.
The rectangular shape optimizes space utilization on printed circuit boards (PCBs), allowing for tighter and more efficient layouts.
Through-hole terminals provide strong mechanical support and are suitable for high-power applications.
With a fast turn-off time, this IGBT contributes to efficient switching in applications, reducing response time and enhancing performance.
The three-terminal design allows for easy integration into various circuit configurations, simplifying the design process.
A high power dissipation capability enables this IGBT to handle substantial power without overheating, improving reliability.
Flange mounting provides robust physical support and excellent heat dissipation, which is crucial for high-performance applications.
High maximum operating temperature ensures reliable operation in demanding thermal environments, extending the lifespan of the device.
The high voltage rating allows this IGBT to be used in a wide range of applications, enabling design flexibility.
Silicon provides good thermal and electrical properties, leading to effective performance in power devices.
A high gate-emitter voltage ensures compatibility with various control circuits, enhancing the versatility of applications.
With a maximum collector current of 6 A, this IGBT can drive moderate loads effectively, making it suitable for mid-range applications.
A lower threshold voltage enables easier and faster switching, which is essential for efficient power conversion.
A matte tin terminal finish provides excellent solderability, ensuring reliable connections in various assembly processes.
A single position design simplifies circuit layouts and reduces the complexity of PCB design.
This fast turn-on time enhances the switching performance, making it ideal for applications requiring rapid response times.
Insulated Gate Bipolar Transistors (IGBT) STGP3NB60FD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics
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JESD-609 Code:
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STGP3NB60FD Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LAN8720A-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
LM317AEMP/NOPB
LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
Allegro MicroSystems
1N4148
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Loras Industries
SMBJ18CA
Silicon Standard
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Multicomp Pro
LM107H
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;
BAV99+
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
LM317T
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
FF450R12ME4EB11BPSA1
Infineon Technologies
FF450R12ME4EB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 740 ns turn off time, and 1200V max collector-emitter voltage. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.
SKM150GB12T4G
Semikron International
SKM150GB12T4G by Semikron: N-CHANNEL IGBT with 2 elements, VCEsat of 2.1V, IC of 220A. Ideal for power control applications due to its high voltage rating of 1200V and max operating temperature of 175°C. Recognized by UL, it features a flange mount package style for easy installation.
2ED300C17SROHSBPSA1
N-Channel; Transistor Element Material: SILICON; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Moisture Sensitivity Level (MSL): 1;
FS150R12KE3BOSA1
FS150R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 200A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial settings due to its isolated case connection and fast switching capabilities.
FF225R12MS4BOSA1
Infineon's FF225R12MS4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Featuring 1200V max collector-emitter voltage, it has a 590ns turn off time and 275A max collector current. Ideal for applications requiring high power switching in industrial settings.
IXGH100N30C3
Littelfuse
IXGH100N30C3 by Littelfuse is an N-CHANNEL IGBT with 300V VCE, 75A IC, and 460W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.85V and fast turn-off time of 244ns. Package style is FLANGE MOUNT with a max operating temp of 150°C.
SK15DGDL126ET
SK15DGDL126ET by Semikron International is an N-CHANNEL IGBT with 1200V VCEsat, 22A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
FGA25N120ANTDTU
Fairchild Semiconductor
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 25 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Voltage: 20 V;
APT85GR120JD60
Microchip Technology
APT85GR120JD60 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. Ideal for motor control applications, it has a nominal turn-off time of 445ns and operates in temperatures ranging from -55 to 150°C.
IGW25T120FKSA1
IGW25T120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, ideal for power control applications. Featuring a 50A max collector current and 790ns turn off time, it operates at up to 150°C. This single configuration transistor has a through-hole terminal form in a rectangular package style.
MIXA60W1200TED
MIXA60W1200TED by Littelfuse is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 2.1V and can handle up to 85A collector current. Ideal for power control applications, it operates at temperatures up to 150°C with a collector-emitter voltage of 1200V.
ISL9V3040P3
ISL9V3040P3 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a Max Collector-Emitter Voltage of 450V and can handle a Max Collector Current of 21A. This IGBT comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
FGH40T120SMD
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
IRG4BC20WPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Transistor Application: MOTOR CONTROL;
BSM150GB120DN2
Eupec & Kg
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 210 A; Qualification: Not Qualified;
STGWT40HP65FB
STMicroelectronics
STGWT40HP65FB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Pmax of 283W. Ideal for power control applications, it has a toff of 202ns and ton of 169ns. Suitable for high-power systems operating b/w -55°C to 175°C.
IHW30N160R5XKSA1
IHW30N160R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max IC of 60A. It is designed for power control applications, featuring a built-in diode, 1600V max collector-emitter voltage, and 263W max power dissipation.
ISL9V3040D3ST
ISL9V3040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 450V and can handle a max collector current of 21A. This IGBT comes in a small outline package style and operates b/w -40 to 175 °C temperature range.
FP10R12W1T4PBPSA1
Infineon Technologies' FP10R12W1T4PBPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 20A. It has a nominal turn off time of 500ns and turn on time of 108ns, ideal for power control applications at up to 175°C operating temperature.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Style (Meter): SMALL OUTLINE;
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STGP6NC60HD
STGP6NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 222ns. Package style is flange mount with through-hole terminals.
STGP30H60DFB
STMicroelectronics' STGP30H60DFB is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 223ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
STGP5H60DF
STGP5H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 10A, and Ptot of 88W. Ideal for power control applications due to its fast turn-off time (toff) of 280ns and high collector-emitter voltage rating of 600V. The package style is flange mount with through-hole terminals.
STGP10NC60HD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 9 A; Maximum Gate-Emitter Threshold Voltage: 5.75 V;
STGP15H60DF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 2 V;
STGP35HF60W
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V;
STGP20V60DF
N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
STGP15M120F3
STGP15M120F3 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 1200V. It is used for power control applications, offering a nominal turn off time of 406ns and a max collector current of 30A.
STGP100N30
STMicroelectronics' STGP100N30 is an N-CHANNEL IGBT with 330V VCE, 90A IC, and 250W Ptot. Ideal for general purpose switching applications due to its fast 310ns turn-off time and max operating temp of 150°C. Package style is flange mount with through-hole terminals.
STGP10M65DF2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Threshold Voltage: 7 V;
STGP30H60DF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
STGP14NC60KD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 25 A; No. of Elements: 1;
STGP20H60DF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STGP30M65DF2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 258 W; Maximum Collector Current (IC): 60 A; Package Shape: RECTANGULAR;
STGP30NC60S
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 55 A; Package Shape: RECTANGULAR;
STGP30V60F
STGP30V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 260W power dissipation, and 60A collector current. Ideal for POWER CONTROL applications, it has a turn-off time of 225ns and operates b/w -55 to 175°C.
STGP7NC60HD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 25 A; Maximum Gate-Emitter Threshold Voltage: 5.75 V;
STGP8NC60KD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 15 A; JEDEC-95 Code: TO-220AB;
STGP7NB60HD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 14 A; Maximum Collector-Emitter Voltage: 600 V;
STGP10NC60KT4
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Threshold Voltage: 7 V; Maximum Gate-Emitter Voltage: 20 V;
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