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STGY40NC60VD

STMicroelectronics

STGY40NC60VD by STMicroelectronics

STMicroelectronics' STGY40NC60VD is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 260W Ptot. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and a turn-off time of 247ns. The package is RECTANGULAR in shape with THROUGH-HOLE terminals.

Median Price

$6.660

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 420 parts In-Stock

1+ parts

$6.470

100+ parts

$4.390

1k+ parts

$3.340

10k+ parts

$3.150

420

$6.470

$4.390

$3.340

$3.150

DigiKey

USA . 303 parts In-Stock

1+ parts

$6.850

100+ parts

$3.928

1k+ parts

$3.285

10k+ parts

-

303

$6.850

$3.928

$3.285

-

Avnet

USA . 570 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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570

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-

Distributors (In-Stock)

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Digiode

USA . 996 parts In-Stock

1+ parts

$6.146

100+ parts

-

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-

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996

$6.146

-

-

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TME

Poland . 16 parts In-Stock

1+ parts

$7.140

100+ parts

$5.680

1k+ parts

$4.940

10k+ parts

$4.250

16

$7.140

$5.680

$4.940

$4.250

Vyrian

USA . 2,219 parts In-Stock

1+ parts

-

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2,219

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Anansix

USA . 1,182 parts In-Stock

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1,182

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Chip Stock

USA . 155 parts In-Stock

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155

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 891 parts In-Stock

1+ parts

$1.070

100+ parts

-

1k+ parts

$0.963

10k+ parts

-

891

$1.070

-

$0.963

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MKK Technologies

India . 1,546 parts In-Stock

1+ parts

$2.012

100+ parts

-

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10k+ parts

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1,546

$2.012

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DigiPath Technology Company

USA . 1,546 parts In-Stock

1+ parts

$2.012

100+ parts

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1,546

$2.012

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Corphita

USA . 1,059 parts In-Stock

1+ parts

$5.823

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1,059

$5.823

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Microchip USA

USA . 5,919 parts In-Stock

1+ parts

$19.880

100+ parts

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5,919

$19.880

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Lixinc

USA . 9,186 parts In-Stock

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9,186

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RC Electronics

USA . 2,128 parts In-Stock

1+ parts

-

100+ parts

$5.040

1k+ parts

$4.570

10k+ parts

$4.410

2,128

-

$5.040

$4.570

$4.410

Perfect Parts

USA . 773 parts In-Stock

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773

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Parana Technologies

USA . 502 parts In-Stock

1+ parts

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100+ parts

$1.279

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502

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$1.279

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Kepictronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

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100

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Overview

Unleash the power of innovation with the STGY40NC60VD by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. Ideal for power control applications, this N-CHANNEL transistor offers a single configuration with a built-in diode, ensuring superior performance and efficiency. With a maximum collector-emitter voltage of 600V and a nominal turn off time of 247ns, this versatile component is designed to meet your most demanding needs. Trust STMicroelectronics to provide you with cutting-edge technology that brings value, reliability, and innovation to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IGBT, making it suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode, providing convenience for power control applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and efficiency in controlling high power levels.

Maximum Power Dissipation (Abs): 260 W

With a high power dissipation capability, the IGBT can handle significant power levels without overheating, ensuring reliability in operation.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, making it suitable for demanding environments where temperature fluctuations occur.

Maximum Collector-Emitter Voltage: 600 V

Offers high voltage capability, enabling the IGBT to withstand high voltage applications with ease.

Maximum Collector Current (IC): 80 A

Capable of handling high current levels, making it suitable for power control applications that require high current handling capacity.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGY40NC60VD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

247 ns

Nominal Turn On Time (ton):

61 ns

Trade Compliance

STGY40NC60VD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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