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STGYA120M65DF2AG

STMicroelectronics

STGYA120M65DF2AG by STMicroelectronics

STMicroelectronics' STGYA120M65DF2AG is an N-CHANNEL IGBT with 650V VCEsat, 160A IC, and 625W power dissipation. Ideal for power control applications, it features a built-in diode, 351ns turn-off time, and operates b/w -55 to 175°C.

Median Price

$8.820

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 223 parts In-Stock

1+ parts

$5.780

100+ parts

$5.080

1k+ parts

-

10k+ parts

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223

$5.780

$5.080

-

-

DigiKey

USA . 553 parts In-Stock

1+ parts

$8.820

100+ parts

$4.450

1k+ parts

$3.900

10k+ parts

-

553

$8.820

$4.450

$3.900

-

Mouser Electronics

USA . 515 parts In-Stock

1+ parts

$8.820

100+ parts

$4.460

1k+ parts

-

10k+ parts

-

515

$8.820

$4.460

-

-

Newark

USA . 57 parts In-Stock

1+ parts

$9.390

100+ parts

$6.710

1k+ parts

$5.430

10k+ parts

-

57

$9.390

$6.710

$5.430

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Element14

Singapore . 223 parts In-Stock

1+ parts

$12.160

100+ parts

$10.900

1k+ parts

$10.590

10k+ parts

-

223

$12.160

$10.900

$10.590

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Avnet

USA . 120 parts In-Stock

1+ parts

-

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120

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Distributors (In-Stock)

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Digiode

USA . 1,686 parts In-Stock

1+ parts

$5.386

100+ parts

-

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-

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1,686

$5.386

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-

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Vyrian

USA . 2,533 parts In-Stock

1+ parts

$5.670

100+ parts

-

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-

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-

2,533

$5.670

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Anansix

USA . 865 parts In-Stock

1+ parts

-

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865

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,261 parts In-Stock

1+ parts

$1.417

100+ parts

-

1k+ parts

$1.275

10k+ parts

-

2,261

$1.417

-

$1.275

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MKK Technologies

India . 1,644 parts In-Stock

1+ parts

$2.664

100+ parts

-

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-

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1,644

$2.664

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DigiPath Technology Company

USA . 1,644 parts In-Stock

1+ parts

$2.664

100+ parts

-

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10k+ parts

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1,644

$2.664

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Ampacity Inc.

Singapore . 4,062 parts In-Stock

1+ parts

$4.820

100+ parts

-

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4,062

$4.820

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Corphita

USA . 2,386 parts In-Stock

1+ parts

$5.103

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2,386

$5.103

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Microchip USA

USA . 6,821 parts In-Stock

1+ parts

$36.568

100+ parts

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6,821

$36.568

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iodParts Technologies Inc.

India . 74,232 parts In-Stock

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74,232

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Kepictronics

USA . 20,000 parts In-Stock

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Perfect Parts

USA . 14,784 parts In-Stock

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14,784

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A-Z Elektronik GmbH

Germany . 759 parts In-Stock

1+ parts

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759

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100

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Parana Technologies

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$1.694

1k+ parts

-

10k+ parts

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1

-

$1.694

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Overview

Unlock the power of efficient power control with the STGYA120M65DF2AG by STMicroelectronics. Crafted with precision and quality by a leading manufacturer in the industry, this insulated gate bipolar transistor is designed for seamless performance in a variety of applications. From its N-channel configuration to its built-in diode, this transistor offers customers unparalleled value with its high power dissipation, low turn-off time, and wide operating temperature range. Elevate your projects with the reliability and performance of the STGYA120M65DF2AG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower on-state resistance and higher switching speeds compared to P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps in preventing damage from reverse polarity or voltage spikes.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable and efficient performance.

Maximum VCEsat: 2.15 V

Low VCEsat helps in reducing power losses and improving efficiency of the transistor.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering onto PCBs.

Nominal Turn Off Time (toff): 351 ns

Fast turn-off time helps in reducing switching losses and improving overall performance.

No. of Terminals: 3

Simplified connection with just 3 terminals makes it easy to integrate into circuits.

Maximum Power Dissipation (Abs): 625 W

High power dissipation capability allows for handling high current and voltage loads.

Package Style (Meter): IN-LINE

In-line package style enables compact and space-saving designs in electronic systems.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 650 V

High collector-emitter voltage rating provides safety margin for voltage spikes and surges.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and reliability for the transistor.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating allows for proper gate control and switching of the transistor.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures reliable operation even in extreme cold conditions.

Maximum Collector Current (IC): 160 A

High collector current rating enables handling of high power loads with ease.

Maximum Gate-Emitter Threshold Voltage: 7 V

Proper gate-emitter threshold voltage ensures stable and controlled switching behavior.

Terminal Position: SINGLE

Single terminal position simplifies connection and reduces complexity in circuit design.

Case Connection: COLLECTOR

Case connected to collector improves thermal dissipation and overall performance.

Nominal Turn On Time (ton): 110 ns

Fast turn-on time allows for quick response and efficient power control.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability suitable for automotive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGYA120M65DF2AG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

351 ns

Nominal Turn On Time (ton):

110 ns

Maximum VCEsat:

2.15 V

Trade Compliance

STGYA120M65DF2AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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