Loading...

STGYA50M120DF3

STMicroelectronics

STGYA50M120DF3 by STMicroelectronics

STGYA50M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.2V, supports up to 1200V collector-emitter voltage, and dissipates up to 535W. Ideal for high-performance applications in industrial systems.

Median Price

$7.476

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 49,380 parts In-Stock

1+ parts

$3.613

100+ parts

-

1k+ parts

-

10k+ parts

-

49,380

$3.613

-

-

-

Mouser Electronics

USA . 1,142 parts In-Stock

1+ parts

$5.780

100+ parts

-

1k+ parts

$4.180

10k+ parts

-

1,142

$5.780

-

$4.180

-

Chip1Stop

Japan . 14,600 parts In-Stock

1+ parts

$6.691

100+ parts

$4.495

1k+ parts

$4.110

10k+ parts

-

14,600

$6.691

$4.495

$4.110

-

Farnell

UK . 18 parts In-Stock

1+ parts

$8.260

100+ parts

$5.490

1k+ parts

$5.170

10k+ parts

-

18

$8.260

$5.490

$5.170

-

DigiKey

USA . 507 parts In-Stock

1+ parts

$8.390

100+ parts

$4.892

1k+ parts

$3.652

10k+ parts

-

507

$8.390

$4.892

$3.652

-

Element14

Singapore . 18 parts In-Stock

1+ parts

$13.760

100+ parts

$9.810

1k+ parts

$9.240

10k+ parts

-

18

$13.760

$9.810

$9.240

-

Verical

USA . 49,380 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

49,380

-

-

-

-

Avnet

USA . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

600

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,252 parts In-Stock

1+ parts

$4.589

100+ parts

-

1k+ parts

-

10k+ parts

-

3,252

$4.589

-

-

-

Digiode

USA . 1,127 parts In-Stock

1+ parts

$6.356

100+ parts

-

1k+ parts

-

10k+ parts

-

1,127

$6.356

-

-

-

Anansix

USA . 2,559 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,559

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 350 parts In-Stock

1+ parts

$0.452

100+ parts

-

1k+ parts

$0.407

10k+ parts

-

350

$0.452

-

$0.407

-

MKK Technologies

India . 2,181 parts In-Stock

1+ parts

$0.849

100+ parts

-

1k+ parts

-

10k+ parts

-

2,181

$0.849

-

-

-

DigiPath Technology Company

USA . 2,181 parts In-Stock

1+ parts

$0.849

100+ parts

-

1k+ parts

-

10k+ parts

-

2,181

$0.849

-

-

-

Corphita

USA . 921 parts In-Stock

1+ parts

$6.022

100+ parts

-

1k+ parts

-

10k+ parts

-

921

$6.022

-

-

-

Continental Prestige Electronics

USA . 6 parts In-Stock

1+ parts

$9.350

100+ parts

$7.600

1k+ parts

-

10k+ parts

-

6

$9.350

$7.600

-

-

Microchip USA

USA . 6,634 parts In-Stock

1+ parts

$28.000

100+ parts

-

1k+ parts

-

10k+ parts

-

6,634

$28.000

-

-

-

Parana Technologies

USA . 514 parts In-Stock

1+ parts

-

100+ parts

$0.540

1k+ parts

-

10k+ parts

-

514

-

$0.540

-

-

iodParts Technologies Inc.

India . 136 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

136

-

-

-

-

Overview

Elevate your power control solutions with the STGYA50M120DF3 from STMicroelectronics, a leader in semiconductor innovation. This high-performance IGBT offers unmatched reliability and efficiency for demanding applications, ensuring optimal thermal management and swift switching capabilities. With its robust design, it thrives in extreme temperatures, making it ideal for industrial automation, renewable energy systems, and motor drives. Trust in STMicroelectronics’ legacy of quality to drive your projects forward with confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and resistance to environmental factors, making the IGBT reliable in various operating conditions.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration allows for efficient operation and is suitable for high-speed applications, enhancing performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode adds versatility by enabling freewheeling capabilities, which improves efficiency in power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT is ideal for various power electronics applications, ensuring optimal performance.

Maximum VCEsat: 2.2 V

This low saturation voltage minimizes power losses during operation, contributing to overall efficiency and thermal management.

Package Shape: RECTANGULAR

The rectangular shape allows for easier PCB layout and integration into various designs, enhancing design flexibility.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide mechanical stability and reliable electrical connections in high-power applications.

Nominal Turn Off Time (toff): 400 ns

A fast turn off time enables high-frequency switching, making this IGBT suitable for modern power electronic applications.

No. of Terminals: 3

With three terminals, this IGBT ensures easy integration into circuits while simplifying the design and layout process.

Maximum Power Dissipation (Abs): 535 W

High power dissipation capability allows the IGBT to handle substantial loads without overheating, ensuring longevity.

Package Style (Meter): FLANGE MOUNT

The flange mount style aids in heat dissipation, improving performance in high-power applications by reducing thermal buildup.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature enables the IGBT to function effectively in harsh environments without compromising performance.

Maximum Collector-Emitter Voltage: 1200 V

This high voltage rating allows for use in a variety of industrial applications, enhancing versatility and reliability.

Transistor Element Material: SILICON

Silicon as the element material provides excellent thermal conductivity and efficiency, making it an ideal choice for power electronics.

Maximum Gate-Emitter Voltage: 30 V

A high gate-emitter voltage rating offers flexibility in control circuitry, accommodating various driving circuits.

Minimum Operating Temperature: -55 °C

This low minimum temperature guarantees reliable operation in cold environments, broadening application scope.

Maximum Collector Current (IC): 100 A

A high maximum collector current capability supports demanding applications with significant power requirements.

Maximum Gate-Emitter Threshold Voltage: 7 V

This optimal threshold voltage enhances control over the transistor, ensuring efficient operation in power control applications.

Terminal Position: SINGLE

Positioning the terminals in a single arrangement simplifies mounting and enhances PCB design efficiency.

Case Connection: COLLECTOR

Collector connection design facilitates efficient heat management and performance in power applications.

Nominal Turn On Time (ton): 54 ns

A fast turn on time promotes high switching frequencies, making this IGBT a suitable choice for advanced power electronics.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGYA50M120DF3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

400 ns

Nominal Turn On Time (ton):

54 ns

Maximum VCEsat:

2.2 V

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 8