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STGB3NB60FDT4

STMicroelectronics

STGB3NB60FDT4 by STMicroelectronics

STGB3NB60FDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and fast switching times (ton: 16.5ns, toff: 535ns). Its compact design ensures efficient performance in surface mount configurations.

Median Price

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3

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1k+

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Vyrian

USA . 8,479 parts In-Stock

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Anansix

USA . 2,460 parts In-Stock

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Digiode

USA . 409 parts In-Stock

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IDEA Electronic Components Group

UK . 847 parts In-Stock

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$1.789

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$1.610

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847

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$1.610

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MKK Technologies

India . 270 parts In-Stock

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$3.365

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DigiPath Technology Company

USA . 270 parts In-Stock

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AZTECH Wire

Italy . 559 parts In-Stock

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$19.060

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Component Stockers USA

USA . 761 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,562 parts In-Stock

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Corphita

USA . 4,293 parts In-Stock

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Perfect Parts

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Parana Technologies

USA . 514 parts In-Stock

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$2.140

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Overview

Unlock unparalleled efficiency with the STGB3NB60FDT4 from STMicroelectronics, a leader in innovative semiconductor solutions. This N-channel IGBT is expertly designed for motor control applications, merging exceptional power management with rapid switching capabilities. Boasting robust performance and reliability, it ensures optimal energy savings and longevity in your projects. Elevate your designs with STMicroelectronics—where quality meets cutting-edge technology for unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material contributes to the overall reliability of the device.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are generally preferred for their efficient performance in motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances efficiency by providing a path for reverse current, making it ideal for motor control.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control, ensuring optimized performance in a variety of applications.

Surface Mount: YES

Surface mount technology enables compact designs and simplifies assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for easier layout and space-efficient PCB designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering reliability and ease of handling during manufacturing.

Nominal Turn Off Time (toff): 535 ns

Fast turn-off time improves switching efficiency, ideal for high-frequency applications.

No. of Terminals: 2

A simplified 2-terminal design reduces complexity in circuit design.

Maximum Power Dissipation (Abs): 68 W

High power dissipation capability allows the device to handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline saves board space, making it suitable for compact electronic designs.

Maximum Operating Temperature: 150 °C

High operating temperature rating ensures reliability in extreme conditions.

Maximum Collector-Emitter Voltage: 600 V

The high voltage rating provides versatility for various applications, including industrial and automotive.

Transistor Element Material: SILICON

Silicon-based construction offers good thermal conductivity and better performance under high temperatures.

Maximum Gate-Emitter Voltage: 20 V

A higher gate-emitter voltage allows for more robust control and increases the robustness of the device.

Maximum Collector Current (IC): 6 A

Adequate current handling capability enables the transistor to be effective in medium power applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

A low threshold voltage facilitates easier control and reduces the power needed for driving the transistor.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability, ensuring reliable connectivity in assembly.

Terminal Position: SINGLE

Single terminal position simplifies the design and helps in achieving a compact layout.

Nominal Turn On Time (ton): 16.5 ns

Fast turn-on time enhances the switching performance, making it suitable for high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB3NB60FDT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

535 ns

Nominal Turn On Time (ton):

16.5 ns

Trade Compliance

STGB3NB60FDT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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