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STGB6NC60HT4

STMicroelectronics

STGB6NC60HT4 by STMicroelectronics

STGB6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 15A collector current, and fast switching times (toff: 222ns, ton: 17.3ns). Ideal for compact designs with its surface mount configuration.

Median Price

$0.761

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 174 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.761

10k+ parts

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174

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$0.761

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Distributors (In-Stock)

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Vyrian

USA . 6,045 parts In-Stock

1+ parts

-

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6,045

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-

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Anansix

USA . 2,826 parts In-Stock

1+ parts

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2,826

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Digiode

USA . 2,583 parts In-Stock

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2,583

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.500

100+ parts

$0.455

1k+ parts

$0.410

10k+ parts

-

450

$0.500

$0.455

$0.410

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IDEA Electronic Components Group

UK . 670 parts In-Stock

1+ parts

$1.384

100+ parts

-

1k+ parts

$1.245

10k+ parts

-

670

$1.384

-

$1.245

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MKK Technologies

India . 2,350 parts In-Stock

1+ parts

$2.602

100+ parts

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2,350

$2.602

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DigiPath Technology Company

USA . 2,350 parts In-Stock

1+ parts

$2.602

100+ parts

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10k+ parts

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2,350

$2.602

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Perfect Parts

USA . 2,139 parts In-Stock

1+ parts

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2,139

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Corphita

USA . 1,860 parts In-Stock

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1,860

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Parana Technologies

USA . 1,505 parts In-Stock

1+ parts

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100+ parts

$1.654

1k+ parts

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1,505

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$1.654

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Overview

Elevate your power control applications with the STGB6NC60HT4 from STMicroelectronics, where quality meets innovation. Renowned for their cutting-edge technology and reliability, STMicroelectronics ensures this N-channel IGBT excels in efficiency and performance. With its compact design and robust thermal handling capabilities, it’s perfect for everything from industrial drives to renewable energy systems. Experience unparalleled value and enhanced reliability—unlock your project’s true potential!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures reliable performance and longevity in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel configuration generally provides lower on-state resistance and higher efficiency, making it ideal for power applications.

Configuration: SINGLE

Single configuration simplifies circuit design and minimizes space requirements on PCBs.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring effective handling of high power levels.

Surface Mount: YES

Surface mount capability allows for compact designs and automated assembly processes, enhancing production efficiency.

Package Shape: RECTANGULAR

Rectangular shape fits well in standard PCB layouts, facilitating easy integration into electronic designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering properties for reliable electrical connections and assembly.

Nominal Turn Off Time (toff): 222 ns

Fast turn off time allows for high-frequency operation, making the IGBT suitable for dynamic power applications.

No. of Terminals: 2

Two terminals simplify connection while maintaining functionality, suitable for various circuit configurations.

Maximum Power Dissipation (Abs): 56 W

High power dissipation capability enables the device to manage substantial power loads without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline design contributes to space savings on the PCB while providing excellent thermal performance.

Maximum Operating Temperature: 150 °C

High operating temperature rating supports operation in challenging environments, enhancing reliability.

Maximum Collector-Emitter Voltage: 600 V

High voltage handling capability makes this product suitable for demanding applications in industrial contexts.

Transistor Element Material: SILICON

Silicon material ensures good thermal stability and robust performance characteristics, standard in power applications.

Maximum Gate-Emitter Voltage: 20 V

Adequate gate-emitter voltage range allows for versatile driving options, enhancing compatibility with various driving circuits.

Maximum Collector Current (IC): 15 A

15 A collector current rating allows for handling significant load currents, ideal for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

Lower threshold voltage ensures easy drive and can reduce power consumption in high-speed applications.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and corrosion resistance, ensuring reliable connections over time.

Terminal Position: SINGLE

Single terminal position allows for straightforward circuit layout and design, simplifying assembly.

Nominal Turn On Time (ton): 17.3 ns

Fast turn on time supports high-speed switching applications, boosting overall system performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB6NC60HT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

222 ns

Nominal Turn On Time (ton):

17.3 ns

Trade Compliance

STGB6NC60HT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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