Loading...

STGB6NC60HDT4

STMicroelectronics

STGB6NC60HDT4 by STMicroelectronics

STGB6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration. Suitable for surface mount with a small outline package style.

Median Price

$0.890

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,311 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

-

10k+ parts

-

1,311

$0.490

-

-

-

Ozdisan Elektronik

Türkiye . 7,635 parts In-Stock

1+ parts

$30.245

100+ parts

-

1k+ parts

-

10k+ parts

-

7,635

$30.245

-

-

-

Vyrian

USA . 2,691 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,691

-

-

-

-

Anansix

USA . 2,634 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,634

-

-

-

-

Schukat

Germany . 900 parts In-Stock

1+ parts

-

100+ parts

$0.890

1k+ parts

$0.708

10k+ parts

-

900

-

$0.890

$0.708

-

Fibra_Brandt Electronic GMBH

Germany . 798 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

798

-

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 128,524 parts In-Stock

1+ parts

$0.430

100+ parts

$0.500

1k+ parts

$0.500

10k+ parts

$0.520

128,524

$0.430

$0.500

$0.500

$0.520

Corphita

USA . 3,811 parts In-Stock

1+ parts

$0.464

100+ parts

-

1k+ parts

-

10k+ parts

-

3,811

$0.464

-

-

-

IDEA Electronic Components Group

UK . 1,391 parts In-Stock

1+ parts

$1.630

100+ parts

-

1k+ parts

$1.467

10k+ parts

-

1,391

$1.630

-

$1.467

-

MKK Technologies

India . 545 parts In-Stock

1+ parts

$3.066

100+ parts

-

1k+ parts

-

10k+ parts

-

545

$3.066

-

-

-

DigiPath Technology Company

USA . 545 parts In-Stock

1+ parts

$3.066

100+ parts

-

1k+ parts

-

10k+ parts

-

545

$3.066

-

-

-

Microchip USA

USA . 4,255 parts In-Stock

1+ parts

$4.206

100+ parts

-

1k+ parts

-

10k+ parts

-

4,255

$4.206

-

-

-

iodParts Technologies Inc.

India . 68,829 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

68,829

-

-

-

-

Computer Components Inc. - USA

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42,000

-

-

-

-

Lixinc

USA . 18,185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,185

-

-

-

-

Kepictronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Assy Fe

Spain . 3,070 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,070

-

-

-

-

A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,400

-

-

-

-

Parana Technologies

USA . 1,837 parts In-Stock

1+ parts

-

100+ parts

$1.949

1k+ parts

-

10k+ parts

-

1,837

-

$1.949

-

-

RC Electronics

USA . 1,710 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,710

-

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Overview

Enhance the performance of your power control applications with the STGB6NC60HDT4 insulated gate bipolar transistor by STMicroelectronics. Trusted for their high-quality products, STMicroelectronics delivers a single N-channel IGBT with a built-in diode ideal for power control purposes. With a maximum collector-emitter voltage of 600V and a nominal turn-off time of 222ns, this transistor offers unmatched reliability and efficiency. Whether you're working on industrial machinery or automotive systems, this surface-mount device in a small outline package shape will meet your needs. Invest in the STGB6NC60HDT4 for superior power management solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and heat dissipation, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel type allows for efficient switching and control of power, making it suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and enhances the performance of the IGBT in power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimized performance and reliability.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and improving efficiency.

Package Shape: RECTANGULAR

Rectangular package shape offers compatibility with standard mounting techniques and facilitates efficient heat dissipation.

Nominal Turn Off Time (toff): 222 ns

Fast turn off time enables quick switching and enhances the overall efficiency of the power control circuit.

No. of Terminals: 2

Two terminals simplify the connection process and reduce the chances of errors during installation.

Maximum Power Dissipation (Abs): 56 W

High power dissipation capability allows the IGBT to handle large power loads without risking overheating or damage.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers compact size, ideal for space-constrained applications while maintaining high performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding environments with elevated temperatures.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating provides robust protection against voltage spikes and fluctuations.

Transistor Element Material: SILICON

Silicon element material offers high efficiency and reliability in power control applications.

Maximum Gate-Emitter Voltage: 20 V

Sufficient gate-emitter voltage rating ensures stable and precise control of the IGBT for power management.

Maximum Collector Current (IC): 15 A

High collector current rating allows the IGBT to handle substantial current flows efficiently.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

Low gate-emitter threshold voltage facilitates precise control and minimizes power loss in power control circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good conductivity and corrosion resistance for reliable connection points.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures proper orientation in the circuit layout.

Maximum Time At Peak Reflow Temperature (s): 30

Extended time at peak reflow temperature allows for proper soldering and bonding during the manufacturing process.

Peak Reflow Temperature °C: 245

High peak reflow temperature ensures secure and reliable solder connections for long-term performance.

Nominal Turn On Time (ton): 17.3 ns

Fast turn on time enables quick response and precise control in power management applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB6NC60HDT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

222 ns

Nominal Turn On Time (ton):

17.3 ns

Trade Compliance

STGB6NC60HDT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20