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STGD3NB60HDT4

STMicroelectronics

STGD3NB60HDT4 by STMicroelectronics

STGD3NB60HDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 50W, and fast switching times (ton: 25ns, toff: 168ns). This compact device ensures efficient performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,124 parts In-Stock

1+ parts

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7,124

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Anansix

USA . 2,043 parts In-Stock

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2,043

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Digiode

USA . 250 parts In-Stock

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250

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 271 parts In-Stock

1+ parts

$0.660

100+ parts

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1k+ parts

$0.594

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271

$0.660

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$0.594

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MKK Technologies

India . 1,021 parts In-Stock

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$1.240

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1,021

$1.240

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DigiPath Technology Company

USA . 1,021 parts In-Stock

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$1.240

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1,021

$1.240

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AZTECH Wire

Italy . 811 parts In-Stock

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$10.830

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811

$10.830

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Corphita

USA . 974 parts In-Stock

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974

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Parana Technologies

USA . 782 parts In-Stock

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$0.789

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782

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$0.789

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Overview

Unlock the power of efficiency with the STGD3NB60HDT4 from STMicroelectronics—a leader in advanced semiconductor solutions. This N-Channel Insulated Gate Bipolar Transistor (IGBT) is designed for superior motor control applications, ensuring reliable performance under demanding conditions. With its rapid switching times and robust design, it delivers exceptional value, enhancing your systems while optimizing energy consumption. Trust in STMicroelectronics’ quality and innovation to elevate your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures lightweight construction while providing adequate protection against environmental factors, enhancing durability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically offer lower on-state resistance and better performance in high-speed applications, making them ideal for motor control.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for faster switching and protection against reverse voltage, improving reliability in motor control applications.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control, this IGBT is optimized for efficiency and performance in controlling motor speed and torque.

Surface Mount: YES

Surface mount capability allows for compact designs and higher efficiency in heat dissipation, making it suitable for modern electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape is conducive to efficient layout on PCB, optimizing space usage while ensuring proper heat management.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability and ease of handling on automated assembly lines, improving production efficiency.

Nominal Turn Off Time (toff): 168 ns

A shorter turn-off time contributes to faster switching, which is essential for high-performance applications requiring rapid response.

No. of Terminals: 2

Having only two terminals simplifies design and integration into circuits, making it easier for engineers to work with.

Maximum Power Dissipation (Abs): 50 W

With a high power dissipation rating, this IGBT can handle significant loads, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package helps save board space, allowing designers to incorporate more components into compact systems.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance under challenging thermal conditions.

Maximum Collector-Emitter Voltage: 600 V

This high voltage rating allows for a wide range of applications, accommodating both industrial and consumer electronics.

Transistor Element Material: SILICON

Silicon is a widely used material known for its efficiency and reliability in high-performance power electronics.

Maximum Gate-Emitter Voltage: 20 V

A high gate-emitter voltage tolerance facilitates seamless integration into diverse control circuits without risk of gate breakdown.

Maximum Collector Current (IC): 10 A

With a collector current capacity of 10 A, this IGBT can efficiently handle a variety of motor control tasks.

Maximum Gate-Emitter Threshold Voltage: 5 V

A lower threshold voltage enhances the drive efficiency and minimizes control voltage requirements, making it user-friendly.

Terminal Finish: MATTE TIN

A matte tin finish improves solderability and minimizes tarnishing, ensuring reliable electrical connections over time.

Terminal Position: SINGLE

Single terminal positioning aids in straightforward mounting and alignment on the PCB, ease of use during assembly.

Nominal Turn On Time (ton): 25 ns

A short turn-on time is advantageous for fast switching applications, enhancing overall circuit performance and efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD3NB60HDT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

168 ns

Nominal Turn On Time (ton):

25 ns

Trade Compliance

STGD3NB60HDT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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