Loading...

STGP3NB60F

STMicroelectronics

STGP3NB60F by STMicroelectronics

STGP3NB60F from STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 68 W, and operates at up to 150 °C. Its fast switching times (ton: 16.5 ns, toff: 535 ns) enhance efficiency in various systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,221

-

-

-

-

Digiode

USA . 4,051 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,051

-

-

-

-

Anansix

USA . 576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

576

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 669 parts In-Stock

1+ parts

$1.693

100+ parts

-

1k+ parts

$1.524

10k+ parts

-

669

$1.693

-

$1.524

-

MKK Technologies

India . 1,745 parts In-Stock

1+ parts

$3.183

100+ parts

-

1k+ parts

-

10k+ parts

-

1,745

$3.183

-

-

-

DigiPath Technology Company

USA . 1,745 parts In-Stock

1+ parts

$3.183

100+ parts

-

1k+ parts

-

10k+ parts

-

1,745

$3.183

-

-

-

Andel Nordic

Denmark . 3,180 parts In-Stock

1+ parts

$8.321

100+ parts

-

1k+ parts

$7.988

10k+ parts

$7.988

3,180

$8.321

-

$7.988

$7.988

AZTECH Wire

Italy . 501 parts In-Stock

1+ parts

$9.450

100+ parts

-

1k+ parts

-

10k+ parts

-

501

$9.450

-

-

-

Component Stockers USA

USA . 291 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

291

$99.990

-

-

-

Corphita

USA . 2,968 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,968

-

-

-

-

Parana Technologies

USA . 816 parts In-Stock

1+ parts

-

100+ parts

$2.024

1k+ parts

-

10k+ parts

-

816

-

$2.024

-

-

Overview

Unlock superior performance in your motor control applications with the STGP3NB60F from STMicroelectronics. Renowned for its innovative solutions, STMicroelectronics delivers unmatched quality and reliability, ensuring your projects run smoothly and efficiently. This N-channel IGBT offers faster switching times and robust power handling, making it perfect for demanding tasks. Elevate your designs and enjoy enhanced efficiency and longevity with this exceptional component!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel configuration allows for efficient switching and can handle higher current levels, enhancing performance in motor control applications.

Configuration: SINGLE

A single configuration simplifies the design process and reduces space requirements in circuit layouts.

Transistor Application: MOTOR CONTROL

Optimized for motor control, this IGBT can precisely manage the power delivery to motors, improving energy efficiency and performance.

Package Shape: RECTANGULAR

The rectangular package shape contributes to efficient thermal management and easy integration into various assemblies.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure mounting and stable connections, enhancing reliability in demanding environments.

Nominal Turn Off Time (toff): 535 ns

A relatively short turn-off time allows for fast switching, which is crucial for high-frequency applications and improved overall efficiency.

No. of Terminals: 3

Three terminals offer simplicity in circuit design while still providing necessary functionality for effective operation.

Maximum Power Dissipation (Abs): 68 W

A high maximum power dissipation rating enables the IGBT to handle significant loads without overheating, ensuring reliable performance.

Package Style (Meter): FLANGE MOUNT

Flange mount style aids in better heat dissipation and mechanical stability, making it suitable for various mounting configurations.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature indicates robustness and reliability in extreme conditions, extending the device's usability.

Maximum Collector-Emitter Voltage: 600 V

The 600 V rating allows it to be used in high-voltage applications, providing flexibility in a range of electronic designs.

Transistor Element Material: SILICON

Silicon provides excellent electrical properties and thermal performance, which enhances the overall efficiency of the IGBT.

Maximum Gate-Emitter Voltage: 20 V

A high gate-emitter voltage tolerance allows for compatibility with a wide range of gate driver circuits, enhancing flexibility in design.

Maximum Collector Current (IC): 6 A

The capacity to handle 6 A of collector current makes this IGBT suitable for various applications, including high-current motor controls.

Maximum Gate-Emitter Threshold Voltage: 5 V

A lower threshold voltage facilitates easier turn-on, contributing to faster response times in switching applications.

Terminal Finish: MATTE TIN

Matte tin finish on terminals ensures excellent solderability and corrosion resistance, improving connection reliability.

Terminal Position: SINGLE

Single terminal position simplifies the layout and design, minimizing complexity in assembly.

Nominal Turn On Time (ton): 16.5 ns

A fast turn-on time contributes to higher efficiency in switching applications, making it ideal for dynamic motor control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP3NB60F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

535 ns

Nominal Turn On Time (ton):

16.5 ns

Trade Compliance

STGP3NB60F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20