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STGP30NC60W

STMicroelectronics

STGP30NC60W by STMicroelectronics

STGP30NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 42.5 ns, toff: 189 ns). Its robust design supports high power dissipation up to 200 W at temperatures up to 150 °C.

Median Price

$1.794

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 900 parts In-Stock

1+ parts

$1.328

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-

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900

$1.328

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Chip1Stop

Japan . 1,787 parts In-Stock

1+ parts

$2.260

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1,787

$2.260

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Verical

USA . 900 parts In-Stock

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900

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Distributors (In-Stock)

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Digiode

USA . 2,958 parts In-Stock

1+ parts

$1.247

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2,958

$1.247

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Vyrian

USA . 8,410 parts In-Stock

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8,410

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Anansix

USA . 1,301 parts In-Stock

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1,301

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Zilex Electronics Inc.

Canada . 950 parts In-Stock

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950

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Distributors (Availability)

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Semicontronic

India . 1,754 parts In-Stock

1+ parts

$1.120

100+ parts

$1.092

1k+ parts

$1.086

10k+ parts

-

1,754

$1.120

$1.092

$1.086

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Ampacity Inc.

Singapore . 1,435 parts In-Stock

1+ parts

$1.120

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1,435

$1.120

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Corphita

USA . 943 parts In-Stock

1+ parts

$1.182

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943

$1.182

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IDEA Electronic Components Group

UK . 1,390 parts In-Stock

1+ parts

$1.466

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$1.320

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1,390

$1.466

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$1.320

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Component Stockers USA

USA . 4,002 parts In-Stock

1+ parts

$1.520

100+ parts

$1.520

1k+ parts

$1.520

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4,002

$1.520

$1.520

$1.520

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MKK Technologies

India . 1,003 parts In-Stock

1+ parts

$2.758

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1,003

$2.758

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DigiPath Technology Company

USA . 1,003 parts In-Stock

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$2.758

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1,003

$2.758

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AZTECH Wire

Italy . 430 parts In-Stock

1+ parts

$20.990

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430

$20.990

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A-Z Elektronik GmbH

Germany . 7,172 parts In-Stock

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7,172

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Parana Technologies

USA . 1,724 parts In-Stock

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$1.753

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1,724

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$1.753

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Perfect Parts

USA . 1,168 parts In-Stock

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1,168

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Overview

Unlock the power of innovation with the STGP30NC60W from STMicroelectronics, a leading name in semiconductor solutions. This N-channel IGBT is designed for exceptional motor control applications, delivering robust performance and reliability. With superior efficiency and thermal management, it ensures optimal operation even in demanding environments. Trust in STMicroelectronics' commitment to quality and elevate your projects with this high-performance device that maximizes value and minimizes downtime.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures reliability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel configuration typically provides better performance in switching applications, enhancing efficiency in motor control.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making assembly easier and more cost-effective.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control, this IGBT enhances precision and performance in controlling electric motors.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on circuit boards, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and better thermal conductivity, ensuring reliability in high-power applications.

Nominal Turn Off Time (toff): 189 ns

A quick turn-off time improves switching efficiency, enabling high-frequency operation essential for modern motor control systems.

No. of Terminals: 3

Three terminals offer a versatile connection scheme, allowing for straightforward circuit integration and easier handling.

Maximum Power Dissipation (Abs): 200 W

With a high power dissipation rating, this IGBT can handle significant loads, making it ideal for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design ensures secure and stable attachment to heat sinks, enhancing thermal management and performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows for reliable performance in demanding environments, increasing operational range.

Maximum Collector-Emitter Voltage: 600 V

A high voltage rating provides the flexibility to work in a wide range of applications, catering to various industrial needs.

Transistor Element Material: SILICON

Silicon as the element material ensures a well-established and reliable performance in a wide variety of electronic circuits.

Maximum Gate-Emitter Voltage: 20 V

This voltage level is suitable for most gate driver circuits, ensuring compatibility and ease of operation with existing designs.

Maximum Collector Current (IC): 60 A

A high collector current rating allows the IGBT to drive larger loads, essential for heavy-duty applications.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

At 5.75 V, it ensures efficient switching with minimal energy losses, contributing to overall system efficiency.

Terminal Finish: Matte Tin (Sn)

Matte tinfinish offers good solderability and corrosion resistance, ensuring durable connections and reliability in operation.

Terminal Position: SINGLE

Single terminal position promotes easier assembly and compact circuit design.

Nominal Turn On Time (ton): 42.5 ns

A low turn-on time facilitates rapid switching, enhancing overall circuit responsiveness and efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP30NC60W attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

189 ns

Nominal Turn On Time (ton):

42.5 ns

Trade Compliance

STGP30NC60W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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