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STGFW20V60DF

STMicroelectronics

STGFW20V60DF by STMicroelectronics

STGFW20V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 40A, and Pmax of 86.7W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and high operating temperature range (-55 to 175 °C).

Median Price

$1.300

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 39 parts In-Stock

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$1.088

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39

$1.088

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Chip1Stop

Japan . 39 parts In-Stock

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$1.300

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39

$1.300

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DigiKey

USA . 500 parts In-Stock

1+ parts

$2.910

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$2.342

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$1.927

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500

$2.910

$2.342

$1.927

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Verical

USA . 39 parts In-Stock

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39

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Digiode

USA . 820 parts In-Stock

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$1.235

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820

$1.235

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Vyrian

USA . 6,016 parts In-Stock

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Anansix

USA . 429 parts In-Stock

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429

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Distributors (Availability)

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Component Stockers USA

USA . 1,350 parts In-Stock

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$0.690

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$0.690

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$0.690

$0.690

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Corphita

USA . 3,554 parts In-Stock

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$1.170

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3,554

$1.170

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IDEA Electronic Components Group

UK . 23 parts In-Stock

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$1.584

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$1.426

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23

$1.584

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$1.426

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MKK Technologies

India . 1,112 parts In-Stock

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$2.979

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$2.979

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DigiPath Technology Company

USA . 1,112 parts In-Stock

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$2.979

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Microchip USA

USA . 9,769 parts In-Stock

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$18.785

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Perfect Parts

USA . 382,704 parts In-Stock

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GreenTree Electronics

Israel . 146,700 parts In-Stock

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,955 parts In-Stock

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4,955

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Parana Technologies

USA . 2,367 parts In-Stock

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$1.894

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2,367

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$1.894

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iodParts Technologies Inc.

India . 300 parts In-Stock

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Overview

Elevate your power control applications with the STGFW20V60DF Insulated Gate Bipolar Transistor from STMicroelectronics. Manufactured with top-notch quality and precision, this N-CHANNEL transistor offers a single configuration with a built-in diode for maximum efficiency. Ideal for a wide range of power control tasks, this product combines high performance with a durable plastic/epoxy package body material. Experience seamless operation and enhanced functionality with the STGFW20V60DF, delivering exceptional value and reliability to customers seeking top-of-the-line components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection, making the product durable and safe to use.

Polarity or Channel Type: N-CHANNEL

Offers lower conduction losses and higher efficiency, making it suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and offers protection against reverse current flow, enhancing overall performance.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in such scenarios.

Maximum VCEsat: 2.2 V

Low VCEsat value reduces power dissipation and improves efficiency during operation.

Package Shape: RECTANGULAR

Allows for easy installation and mounting in various systems or circuit boards.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections for consistent performance in different environments.

Nominal Turn Off Time (toff): 173 ns

Fast switching speed helps in reducing switching losses and improving overall efficiency.

No. of Terminals: 3

Simple and efficient 3-terminal design for easy integration into different circuits or systems.

Maximum Power Dissipation (Abs): 86.7 W

High power dissipation capability allows for handling large loads or currents effectively.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides stable and secure mounting, ensuring proper heat dissipation.

Maximum Operating Temperature: 175 °C

Wide temperature range allows for reliable operation in various industrial or environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High maximum voltage rating makes it suitable for handling high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability, making it a preferred choice for power devices.

Maximum Gate-Emitter Voltage: 20 V

Adequate gate-emitter voltage rating for efficient control of the transistor in different operating conditions.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for reliable operation in extreme cold environments.

Maximum Collector Current (IC): 40 A

High collector current rating enables the transistor to handle high current loads effectively.

Maximum Gate-Emitter Threshold Voltage: 7 V

Optimal gate-emitter threshold voltage for efficient control and switching performance.

Terminal Position: SINGLE

Simple single terminal positioning for easy connection and integration into circuit designs.

Case Connection: ISOLATED

Isolated case connection improves safety and prevents any unwanted electrical interference.

Nominal Turn On Time (ton): 49 ns

Fast turn-on time improves responsiveness and efficiency in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGFW20V60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

173 ns

Nominal Turn On Time (ton):

49 ns

Maximum VCEsat:

2.2 V

Trade Compliance

STGFW20V60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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