Loading...

STGB40V60F

STMicroelectronics

STGB40V60F by STMicroelectronics

STGB40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V VCE, 80A IC, and 283W power dissipation. Ideal for power control applications, it has a toff of 241ns and ton of 73ns.

Median Price

$2.550

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 957 parts In-Stock

1+ parts

$2.550

100+ parts

$1.410

1k+ parts

$1.220

10k+ parts

-

957

$2.550

$1.410

$1.220

-

Mouser Electronics

USA . 74 parts In-Stock

1+ parts

$3.710

100+ parts

$1.660

1k+ parts

$1.360

10k+ parts

-

74

$3.710

$1.660

$1.360

-

Newark

USA . 957 parts In-Stock

1+ parts

$4.340

100+ parts

$2.380

1k+ parts

$2.200

10k+ parts

-

957

$4.340

$2.380

$2.200

-

Element14

Singapore . 957 parts In-Stock

1+ parts

$4.360

100+ parts

$2.410

1k+ parts

$2.120

10k+ parts

-

957

$4.360

$2.410

$2.120

-

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.172

10k+ parts

-

3,000

-

-

$1.172

-

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.172

10k+ parts

-

3,000

-

-

$1.172

-

Chip1Stop

Japan . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.493

10k+ parts

-

2,000

-

-

$1.493

-

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,756 parts In-Stock

1+ parts

$2.717

100+ parts

-

1k+ parts

-

10k+ parts

-

2,756

$2.717

-

-

-

Vyrian

USA . 4,099 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,099

-

-

-

-

Anansix

USA . 2,607 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,607

-

-

-

-

R&J Components

USA . 575 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

575

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,120 parts In-Stock

1+ parts

$1.164

100+ parts

-

1k+ parts

$1.047

10k+ parts

-

2,120

$1.164

-

$1.047

-

Component Stockers USA

USA . 4,059 parts In-Stock

1+ parts

$1.480

100+ parts

$1.480

1k+ parts

-

10k+ parts

-

4,059

$1.480

$1.480

-

-

MKK Technologies

India . 1,960 parts In-Stock

1+ parts

$2.188

100+ parts

-

1k+ parts

-

10k+ parts

-

1,960

$2.188

-

-

-

DigiPath Technology Company

USA . 1,960 parts In-Stock

1+ parts

$2.188

100+ parts

-

1k+ parts

-

10k+ parts

-

1,960

$2.188

-

-

-

Corphita

USA . 2,287 parts In-Stock

1+ parts

$2.574

100+ parts

-

1k+ parts

-

10k+ parts

-

2,287

$2.574

-

-

-

Microchip USA

USA . 3,701 parts In-Stock

1+ parts

$10.760

100+ parts

-

1k+ parts

-

10k+ parts

-

3,701

$10.760

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 26,186 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,186

-

-

-

-

iodParts Technologies Inc.

India . 8,017 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,017

-

-

-

-

Parana Technologies

USA . 673 parts In-Stock

1+ parts

-

100+ parts

$1.392

1k+ parts

-

10k+ parts

-

673

-

$1.392

-

-

Overview

Unleash the power of the STGB40V60F Insulated Gate Bipolar Transistor by STMicroelectronics! Designed with precision and reliability in mind, this N-CHANNEL transistor is a game-changer for power control applications. With a maximum VCEsat of 2.3V and a maximum collector-emitter voltage of 600V, this transistor delivers exceptional performance even in the most demanding environments. The compact package style and gull wing terminals make installation a breeze, while the high maximum power dissipation ensures long-lasting durability. Trust STMicroelectronics to provide you with the quality and value you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the IGBT lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs have lower on-state voltage drop and faster switching characteristics, making them ideal for power control applications.

Configuration: SINGLE

Single configuration IGBTs are easier to manage and integrate into circuits, simplifying the design process.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is well-suited for controlling high power levels efficiently.

Surface Mount: YES

Surface mount IGBTs offer space-saving advantages and are suitable for automated assembly processes.

Maximum VCEsat: 2.3 V

With a low maximum VCEsat value, this IGBT minimizes power loss and improves overall efficiency.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient placement on circuit boards and heat sinks, enhancing thermal management.

Nominal Turn Off Time (toff): 241 ns

Fast turn-off time ensures quick switching and reduces power loss during switching transitions.

Maximum Power Dissipation (Abs): 283 W

High maximum power dissipation capability allows for handling high power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact and dense circuit designs.

Maximum Operating Temperature: 175 °C

Wide operating temperature range makes this IGBT suitable for operation in various environments and conditions.

Maximum Collector-Emitter Voltage: 600 V

High maximum collector-emitter voltage rating allows for handling high voltage levels safely.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and reliability, ensuring stable operation over a wide temperature range.

Maximum Gate-Emitter Voltage: 20 V

High maximum gate-emitter voltage rating provides ample headroom for gate control signals, ensuring reliable operation.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in cold environments without compromising performance.

Maximum Collector Current (IC): 80 A

High maximum collector current rating enables handling of high current levels for power control applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

Moderate gate-emitter threshold voltage simplifies gate drive circuit design and improves overall system efficiency.

Terminal Position: SINGLE

Single terminal position simplifies connection and ensures proper orientation during installation.

Case Connection: COLLECTOR

Collector case connection facilitates proper heat dissipation and improves thermal management within the system.

Nominal Turn On Time (ton): 73 ns

Fast turn-on time ensures quick response and efficient power control in high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB40V60F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

241 ns

Nominal Turn On Time (ton):

73 ns

Maximum VCEsat:

2.3 V

Trade Compliance

STGB40V60F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20