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STGB14NC60KT4

STMicroelectronics

STGB14NC60KT4 by STMicroelectronics

STGB14NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,868 parts In-Stock

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8,868

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Digiode

USA . 4,811 parts In-Stock

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4,811

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Anansix

USA . 2,472 parts In-Stock

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2,472

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 716 parts In-Stock

1+ parts

$0.436

100+ parts

-

1k+ parts

$0.392

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716

$0.436

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$0.392

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.499

100+ parts

$0.454

1k+ parts

$0.409

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-

350

$0.499

$0.454

$0.409

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MKK Technologies

India . 990 parts In-Stock

1+ parts

$0.820

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-

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990

$0.820

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DigiPath Technology Company

USA . 990 parts In-Stock

1+ parts

$0.820

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990

$0.820

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AZTECH Wire

Italy . 1,053 parts In-Stock

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$21.440

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1,053

$21.440

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 6,338 parts In-Stock

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6,338

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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A-Z Elektronik GmbH

Germany . 5,465 parts In-Stock

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5,465

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RC Electronics

USA . 2,708 parts In-Stock

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2,708

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Parana Technologies

USA . 2,039 parts In-Stock

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$0.521

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2,039

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$0.521

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 1,398 parts In-Stock

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1,398

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Infinite Electronics LLP (Excess)

. 1,230 parts In-Stock

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1,230

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Perfect Parts

USA . 757 parts In-Stock

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757

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Overview

Elevate your power control solutions with the STGB14NC60KT4 by STMicroelectronics, a trusted leader in semiconductor innovation. Designed for reliability and efficiency, this N-channel IGBT delivers exceptional performance across diverse applications—from industrial automation to renewable energy systems. With robust thermal management and compact packaging, it ensures optimal operation even in demanding environments, making it the ideal choice for engineers seeking quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and provides excellent protection against environmental factors, ensuring reliability in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel configuration allows for efficient switching and is widely preferred in power applications, making this IGBT suitable for high-performance power control.

Configuration: SINGLE

A single configuration simplifies the design and integration into circuits, making it ideal for straightforward power management applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, it ensures effective management of power flow, making it excellent for industrial and consumer electronics.

Surface Mount: YES

The surface mount capability allows for high-density PCB layouts, enabling compact design solutions and improved production efficiency.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCB, making it easier to implement in various circuit designs.

Terminal Form: GULL WING

Gull wing terminals provide enhanced solder joint strength and reliability in surface mount applications, ensuring stable connections.

Nominal Turn Off Time (toff): 340 ns

A relatively short turn-off time allows for rapid switching, which is crucial for efficient power management and reducing energy losses.

No. of Terminals: 2

The dual terminal setup simplifies connections and integration into circuits, promoting ease of use and assembly.

Maximum Power Dissipation (Abs): 80 W

With a high maximum power dissipation capability, this IGBT can handle significant power loads, making it suitable for a variety of demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style caters to space-constrained applications, allowing for efficient use of PCB real estate.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this IGBT to function reliably in high-temperature environments, broadening its application range.

Maximum Collector-Emitter Voltage: 600 V

The high voltage rating enables application in high-voltage circuits, making it suitable for industrial and energy applications.

Transistor Element Material: SILICON

Silicon as the element material offers excellent conductivity and thermal stability, promoting overall performance and efficiency.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V ensures compatibility with a wide range of driving circuitry and enhances operational flexibility.

Maximum Collector Current (IC): 25 A

A collector current rating of 25 A supports substantial load handling, making it effective for robust power applications.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

A moderate gate-emitter threshold voltage provides reliable performance while maintaining compatibility with standard control signals.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and promotes reliable long-term connections, enhancing the overall durability of the component.

Terminal Position: DUAL

Dual terminal position allows flexibility in board layout and facilitates easy integration into diverse circuit designs.

Nominal Turn On Time (ton): 31.5 ns

A quick turn-on time contributes to enhanced operational efficiency by minimizing delay in power switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB14NC60KT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

340 ns

Nominal Turn On Time (ton):

31.5 ns

Trade Compliance

STGB14NC60KT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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