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STGW20H60DF

STMicroelectronics

STGW20H60DF by STMicroelectronics

STGW20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 40A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and turn-off time of 259ns. This SINGLE transistor in PLASTIC/EPOXY package operates b/w -55 to 175 °C.

Median Price

$2.775

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 327 parts In-Stock

1+ parts

$1.900

100+ parts

$1.620

1k+ parts

$1.600

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-

327

$1.900

$1.620

$1.600

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Farnell

UK . 327 parts In-Stock

1+ parts

$2.510

100+ parts

$0.918

1k+ parts

$0.879

10k+ parts

-

327

$2.510

$0.918

$0.879

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DigiKey

USA . 558 parts In-Stock

1+ parts

$3.040

100+ parts

$1.642

1k+ parts

$1.103

10k+ parts

$0.935

558

$3.040

$1.642

$1.103

$0.935

Newark

USA . 366 parts In-Stock

1+ parts

$3.580

100+ parts

-

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$1.780

10k+ parts

$1.720

366

$3.580

-

$1.780

$1.720

Avnet

USA . 18,180 parts In-Stock

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EBV Elektronik

Germany . 1,380 parts In-Stock

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1,380

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Distributors (In-Stock)

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Digiode

USA . 1,114 parts In-Stock

1+ parts

$2.280

100+ parts

-

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1,114

$2.280

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Vyrian

USA . 8,874 parts In-Stock

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-

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8,874

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Anansix

USA . 1,170 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,199 parts In-Stock

1+ parts

$1.176

100+ parts

-

1k+ parts

$1.058

10k+ parts

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1,199

$1.176

-

$1.058

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Continental Prestige Electronics

USA . 163 parts In-Stock

1+ parts

$2.060

100+ parts

$1.510

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163

$2.060

$1.510

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Corphita

USA . 1,919 parts In-Stock

1+ parts

$2.160

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1,919

$2.160

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MKK Technologies

India . 2,370 parts In-Stock

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$2.211

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2,370

$2.211

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DigiPath Technology Company

USA . 2,370 parts In-Stock

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$2.211

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2,370

$2.211

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Lixinc

USA . 16,129 parts In-Stock

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16,129

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Kepictronics

USA . 9,000 parts In-Stock

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Microchip USA

USA . 5,142 parts In-Stock

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Epart123

USA . 3,000 parts In-Stock

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$2.000

10k+ parts

$2.000

3,000

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-

$2.000

$2.000

GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Perfect Parts

USA . 655 parts In-Stock

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655

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Parana Technologies

USA . 177 parts In-Stock

1+ parts

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100+ parts

$1.406

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177

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$1.406

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Overview

Experience the power of STMicroelectronics with the STGW20H60DF Insulated Gate Bipolar Transistor. Designed for power control applications, this N-CHANNEL transistor offers a maximum collector-emitter voltage of 600V and a maximum collector current of 40A. With a built-in diode and a nominal turn on/off time of 55.9/259 ns, this transistor provides reliable performance and efficiency. Trust in the quality and expertise of STMicroelectronics to deliver cutting-edge technology that meets your power control needs with the STGW20H60DF.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and control in the transistor.

Maximum VCEsat: 2 V

Low voltage drop across the collector-emitter junction leads to high efficiency in power control applications.

Maximum Power Dissipation (Abs): 167 W

Capable of handling high power dissipation, making it suitable for demanding applications.

Maximum Operating Temperature: 175 °C

Can operate effectively in high temperature environments.

Maximum Collector-Emitter Voltage: 600 V

Can handle high voltage applications with ease.

Maximum Collector Current (IC): 40 A

Capable of handling high currents for power control purposes.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGW20H60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

259 ns

Maximum Turn On Time (ton):

259 ns

Nominal Turn On Time (ton):

55.9 ns

Maximum VCEsat:

2 V

Trade Compliance

STGW20H60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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