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SKM150GM12T4G

Semikron International

SKM150GM12T4G by Semikron International

Semikron International's SKM150GM12T4G is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max VCEsat of 2.1V, IC of 229A, and toff of 482ns. Ideal for power control applications due to its high collector-emitter voltage of 1200V and fast turn-on time (ton) of 222ns at a max operating temp of 175°C.

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Overview

Upgrade your power control systems with the SKM150GM12T4G from Semikron International. As a leading manufacturer of Insulated Gate Bipolar Transistors (IGBT), Semikron International delivers top-quality products that are reliable and efficient. This N-CHANNEL transistor with a common emitter configuration and built-in diode is ideal for a wide range of applications. With a maximum collector-emitter voltage of 1200V and a maximum collector current of 229A, this transistor offers exceptional performance and durability. Enhance your power control systems today with the SKM150GM12T4G and experience the quality and value that Semikron International provides.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have faster switching speeds and lower drive power requirements compared to P-channel IGBTs, making them a more efficient choice for power control applications.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

The common emitter configuration provides high current gain and the built-in diode enhances efficiency in power control applications.

Maximum VCEsat: 2.1 V

Low VCEsat value indicates minimal energy loss and high efficiency during operation.

Nominal Turn Off Time (toff): 482 ns

Fast turn-off time allows for precise control and high switching speeds in power control applications.

Maximum Collector-Emitter Voltage: 1200 V

High maximum voltage rating allows for the handling of high power levels without damage to the transistor.

Maximum Collector Current (IC): 229 A

High collector current rating enables the transistor to handle large currents effectively.

Nominal Turn On Time (ton): 222 ns

Fast turn-on time ensures quick response and efficient operation in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKM150GM12T4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X5

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

482 ns

Nominal Turn On Time (ton):

222 ns

Maximum VCEsat:

2.1 V

Trade Compliance

SKM150GM12T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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