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STGB30H60DF

STMicroelectronics

STGB30H60DF by STMicroelectronics

STGB30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 60A, and Ptot of 260W. Ideal for power control applications, it operates b/w -40 to 175 °C with a VCEmax of 600V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,599 parts In-Stock

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Anansix

USA . 1,180 parts In-Stock

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1,180

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Digiode

USA . 346 parts In-Stock

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346

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IDEA Electronic Components Group

UK . 2,108 parts In-Stock

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$0.627

100+ parts

-

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$0.564

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2,108

$0.627

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$0.564

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$0.793

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$0.722

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$0.650

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300

$0.793

$0.722

$0.650

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MKK Technologies

India . 1,416 parts In-Stock

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$1.178

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$1.178

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DigiPath Technology Company

USA . 1,416 parts In-Stock

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$1.178

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1,416

$1.178

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AZTECH Wire

Italy . 894 parts In-Stock

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$8.290

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894

$8.290

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Corphita

USA . 3,419 parts In-Stock

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3,419

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Parana Technologies

USA . 1,439 parts In-Stock

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$0.749

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1,439

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$0.749

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Kepictronics

USA . 195 parts In-Stock

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Overview

Looking for reliable power control solutions? Look no further than the STGB30H60DF Insulated Gate Bipolar Transistor by STMicroelectronics. With a maximum VCEsat of 2.4V and a maximum Collector-Emitter Voltage of 600V, this N-CHANNEL transistor is perfect for a variety of applications where power efficiency is key. Its built-in diode and high power dissipation of 260W make it a top choice for demanding projects. Trust in the quality and expertise of STMicroelectronics to deliver the performance you need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material offers good thermal conductivity, making the transistor efficient in dissipating heat during operation.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors generally have lower on-state resistance and higher switching speeds, making this IGBT efficient for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects the transistor from voltage spikes, enhancing the reliability of the power control system.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT can efficiently regulate and switch high levels of power.

Maximum VCEsat: 2.4 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to higher efficiency and lower power losses.

Maximum Power Dissipation (Abs): 260 W

With a high power dissipation capacity, this IGBT can handle large power loads without overheating or performance degradation.

Maximum Collector-Emitter Voltage: 600 V

High VCE voltage rating allows the transistor to withstand high voltage levels, ensuring durability and reliability in power control applications.

Maximum Gate-Emitter Voltage: 20 V

Wide gate-emitter voltage range provides flexibility in controlling the switch-on/off characteristics of the IGBT, optimizing performance in diverse applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB30H60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

234 ns

Nominal Turn On Time (ton):

64 ns

Maximum VCEsat:

2.4 V

Trade Compliance

STGB30H60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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