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STGFW30NC60V

STMicroelectronics

STGFW30NC60V by STMicroelectronics

STMicroelectronics' STGFW30NC60V is an N-CHANNEL IGBT with 600V VCE, 36A IC, and 80W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

Median Price

$7.930

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 279 parts In-Stock

1+ parts

$7.930

100+ parts

$4.600

1k+ parts

$3.868

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279

$7.930

$4.600

$3.868

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Distributors (In-Stock)

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Digiode

USA . 3,440 parts In-Stock

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$6.184

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3,440

$6.184

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Vyrian

USA . 3,241 parts In-Stock

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3,241

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Anansix

USA . 2,112 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 240 parts In-Stock

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240

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Bristol Electronics

USA . 240 parts In-Stock

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240

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Dan-Mar Components

USA . 240 parts In-Stock

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240

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 886 parts In-Stock

1+ parts

$1.797

100+ parts

-

1k+ parts

$1.617

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886

$1.797

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$1.617

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MKK Technologies

India . 1,165 parts In-Stock

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$3.379

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1,165

$3.379

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DigiPath Technology Company

USA . 1,165 parts In-Stock

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$3.379

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$3.379

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Corphita

USA . 4,305 parts In-Stock

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$5.859

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4,305

$5.859

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Microchip USA

USA . 310 parts In-Stock

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$18.060

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310

$18.060

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Component Stockers USA

USA . 329 parts In-Stock

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$99.990

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329

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 22,079 parts In-Stock

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22,079

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Perfect Parts

USA . 629 parts In-Stock

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629

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Parana Technologies

USA . 148 parts In-Stock

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$2.148

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148

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$2.148

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Overview

Unleash the power of innovation with the STGFW30NC60V Insulated Gate Bipolar Transistor from STMicroelectronics. With a maximum collector-emitter voltage of 600V and a maximum gate-emitter voltage of 20V, this N-CHANNEL transistor offers high performance and reliability for a wide range of applications. Whether you're designing power converters, motor drives, or industrial equipment, this transistor delivers exceptional value and efficiency. Trust STMicroelectronics for cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have lower ON-state voltage drop and faster switching speeds, making them ideal for high power applications.

Maximum Power Dissipation (Abs): 80 W

With a high maximum power dissipation, this IGBT can handle a significant amount of heat while still maintaining performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this IGBT to operate efficiently in a wide range of environments.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage makes this IGBT suitable for high voltage applications.

Maximum Gate-Emitter Voltage: 20 V

The high maximum gate-emitter voltage provides robust protection against voltage spikes and overloads.

Maximum Collector Current (IC): 36 A

With a high maximum collector current, this IGBT can handle large amounts of current without overheating.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

The low gate-emitter threshold voltage ensures efficient switching and reduces power losses in the IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGFW30NC60V attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Trade Compliance

STGFW30NC60V Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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