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STGFW35HF60W

STMicroelectronics

STGFW35HF60W by STMicroelectronics

STMicroelectronics' STGFW35HF60W is an N-CHANNEL IGBT with 88W power dissipation, 600V collector-emitter voltage, and 36A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial equipment and motor drives.

Median Price

$6.970

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 285 parts In-Stock

1+ parts

$6.970

100+ parts

$5.565

1k+ parts

$4.979

10k+ parts

-

285

$6.970

$5.565

$4.979

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 893 parts In-Stock

1+ parts

$6.622

100+ parts

-

1k+ parts

-

10k+ parts

-

893

$6.622

-

-

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Vyrian

USA . 8,986 parts In-Stock

1+ parts

-

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8,986

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Anansix

USA . 1,900 parts In-Stock

1+ parts

-

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1,900

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Bristol Electronics

USA . 239 parts In-Stock

1+ parts

-

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239

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Dan-Mar Components

USA . 239 parts In-Stock

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239

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,138 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

$0.441

10k+ parts

-

1,138

$0.490

-

$0.441

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MKK Technologies

India . 1,536 parts In-Stock

1+ parts

$0.922

100+ parts

-

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1,536

$0.922

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DigiPath Technology Company

USA . 1,536 parts In-Stock

1+ parts

$0.922

100+ parts

-

1k+ parts

-

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1,536

$0.922

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Corphita

USA . 1,724 parts In-Stock

1+ parts

$6.273

100+ parts

-

1k+ parts

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1,724

$6.273

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Andel Nordic

Denmark . 5,732 parts In-Stock

1+ parts

$7.982

100+ parts

-

1k+ parts

$7.663

10k+ parts

$7.663

5,732

$7.982

-

$7.663

$7.663

Microchip USA

USA . 363 parts In-Stock

1+ parts

$19.320

100+ parts

-

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363

$19.320

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-

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Component Stockers USA

USA . 254 parts In-Stock

1+ parts

$99.990

100+ parts

-

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254

$99.990

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Perfect Parts

USA . 605 parts In-Stock

1+ parts

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605

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Parana Technologies

USA . 252 parts In-Stock

1+ parts

-

100+ parts

$0.586

1k+ parts

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10k+ parts

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252

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$0.586

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Overview

Elevate your electronic designs with the STGFW35HF60W from STMicroelectronics, a leading manufacturer known for high-quality components. This Insulated Gate Bipolar Transistor (IGBT) offers reliable performance and efficiency, making it ideal for a wide range of applications. With a maximum power dissipation of 88W and a collector-emitter voltage of 600V, this N-CHANNEL transistor delivers exceptional power handling capabilities. Trust STMicroelectronics to provide you with the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them suitable for applications requiring high power and frequency operation.

Maximum Power Dissipation (Abs): 88 W

With a high maximum power dissipation, this IGBT can handle significant power levels without overheating, ensuring reliable performance in demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this IGBT to operate in a wide range of environments without compromising performance, ideal for industrial applications with varying temperature conditions.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage rating provides a wide safety margin, enabling this IGBT to be used in circuits with higher voltage requirements, ensuring robust performance and increased reliability.

Maximum Gate-Emitter Voltage: 20 V

The high maximum gate-emitter voltage rating allows for better immunity to voltage spikes or transients, enhancing the overall durability and longevity of the IGBT in harsh operating conditions.

Maximum Collector Current (IC): 36 A

With a high maximum collector current rating, this IGBT is capable of handling high current levels, making it suitable for applications requiring high power output.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

The low gate-emitter threshold voltage ensures precise control and efficient switching of the IGBT, resulting in reduced power losses and improved overall efficiency in circuit designs.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGFW35HF60W attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Trade Compliance

STGFW35HF60W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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