Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STGW40V60DLF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. It operates up to 175 °C and is ideal for high-power applications like motor drives and inverters.
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N-CHANNEL IGBTs offer better conduction characteristics and lower on-state voltage drop compared to P-CHANNEL IGBTs, making them more efficient for high-power applications.
With a high power dissipation rating, this IGBT can handle significant amounts of power without overheating, making it suitable for applications where high power handling is required.
The high maximum operating temperature ensures that this IGBT can withstand elevated temperatures without performance degradation, providing reliability in harsh operating conditions.
The high collector-emitter voltage rating allows this IGBT to be used in high voltage applications, making it versatile and suitable for a wide range of power electronics designs.
With a low gate-emitter voltage, this IGBT is easy to drive and control, making it ideal for applications where precise control and fast switching speeds are required.
With a high collector current rating, this IGBT can safely handle high levels of current flow, making it suitable for high-power applications where current handling is crucial.
Insulated Gate Bipolar Transistors (IGBT) STGW40V60DLF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Maximum Gate-Emitter Voltage:
Maximum Operating Temperature:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Maximum Time At Peak Reflow Temperature (s):
STGW40V60DLF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - STGx obs 08/Jul/2022
PCN Assembly/Origin - IGBT/IPM TFS A/T Add 22/Oct/2021
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
1N4148
Diotec Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM555CM
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
2N2222A
Ksl Microdevices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
Hi-tron Semiconductor
M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
SS14
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99WT1G
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Onsemi
Silicon Standard
Asi Semiconductor
SN65HVD234DR
Texas Instruments
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
BAV99
Weitronic Enterprise
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
SPC TECHNOLOGY/ MULTICOMP
ECS-.327-12.5-17X-TR
Ecs International
ECS-0.327-12.5-17X-TR by Ecs International is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing in temperature ranges from -40 to 85 °C, such as telecommunications and industrial automation.
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
2N7002-7-F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
NC7WZ07P6X
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
FS300R12KE3BOSA1
Infineon Technologies
FS300R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, max IC of 500A, and toff of 810ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems due to its max VCE of 1200V and fast ton of 400ns.
IGB50N65S5ATMA1
IGB50N65S5ATMA1 by Infineon is an N-CHANNEL IGBT for power control applications. It has a max VCEsat of 1.7V, IC of 80A, and toff of 215ns. With a package style of SMALL OUTLINE and operating temperature range from -40 to 175 °C, it offers efficient power management in various electronic systems.
AFGHL75T65SQDT
AFGHL75T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 174ns and a max power dissipation of 375W. This single configuration transistor operates b/w -55 to 175 °C, making it suitable for various industrial uses.
STGW40H60DLFB
STMicroelectronics
STGW40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. It operates up to 175°C making it suitable for high-power applications like motor drives and inverters.
IXXX100N60C3H1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;
IXXH75N60C3
Littelfuse
IXXH75N60C3 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 600V. It is commonly used for power control applications due to its high power dissipation of 750W and fast nominal turn-off time of 185ns.
IXDR35N60BD1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 38 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSIP-T3;
MGD623S
Sanken Electric
The Sanken Electric MGD623S is an N-CHANNEL IGBT transistor with a max voltage of 600V and current of 50A. It has a turn-off time of 420ns and turn-on time of 175ns, making it ideal for power control applications. The package style is flange mount with a plastic/epoxy body material.
IRGP20B60PDPBF
IRGP20B60PDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 40A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 138ns and Max Power Dissipation of 220W.
FGH40N60SFDTU-F085
FGH40N60SFDTU-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 54ns fall time, and -55 to 150°C operating temperature range.
FGD3040G2_F085
Fairchild Semiconductor's FGD3040G2_F085 is an N-CHANNEL IGBT with 23.2A IC, 390V VCE, and 150W Pd. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package suitable for surface mount assembly.
IRG4PH30KPBF
IRG4PH30KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 42W. It is designed for MOTOR CONTROL applications, featuring a single configuration and a package style of FLANGE MOUNT. With a nominal turn on time of 53ns and max operating temperature of 150°C, it offers efficient performance in various industrial settings.
IXGA20N120A3-TRL
IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.
FGB20N60SFD_F085
FGB20N60SFD_F085 by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn-off time of 123ns and turn-on time of 28ns, suitable for power control applications. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
APT50GR120JD30
Microchip Technology
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
NGTB15N120FLWG
NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
IRG4PC30UDPBF
IRG4PC30UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 23A. It is designed for POWER CONTROL applications, featuring a single configuration with built-in diode and a package style of FLANGE MOUNT. Operating temperature ranges from -55 to 150 °C.
APT200GN60J
APT200GN60J by Microchip Technology is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 250A max collector current. It has a power dissipation of 682W, turn-off time of 1210ns, and turn-on time of 75ns. Ideal for power control applications requiring high voltage and current handling capabilities.
IXYP20N65C3D1
IXYP20N65C3D1 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 50A IC, and 2.5V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
FF300R12ME4BOSA1
FF300R12ME4BOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 450A, and turn off time of 720ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
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STGW20NC60VD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; Nominal Turn Off Time (toff): 280 ns;
STGWT20H65FB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 168 W; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 650 V;
STGW60H65DFB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel;
STGWT40HP65FB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 283 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 2 V;
STGW30NC60WD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; JEDEC-95 Code: TO-247AC;
STGW19NC60HD
STGW19NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 42A IC, and 140W Ptot. It's used for power control applications due to its fast turn-off time of 272ns and built-in diode in a rectangular package with through-hole terminals.
STGW30NC120HD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Collector Current (IC): 60 A; No. of Elements: 1;
STGW25H120F2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 50 A; Nominal Turn On Time (ton): 41 ns;
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 283 W; Maximum Collector Current (IC): 80 A; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STGWA50IH65DF
STGWA50IH65DF by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2V and a max collector-emitter voltage of 650V. It is commonly used in applications requiring high power dissipation, such as industrial motor drives and power supplies.
STGW60V60DF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Voltage: 20 V;
STGWA40H60DLFB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 283 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;
STGW25M120DF3
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 50 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;
STGW45HF60WD
STGW45HF60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns.
STGW45HF60WDI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 70 A; Transistor Application: POWER CONTROL;
STGWA40M120DF3
STGWA40M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with a max power dissipation of 468W. It operates at a max temperature of 175°C and has a collector-emitter voltage of 1200V. It is commonly used in high-power applications such as motor drives and inverters.
STGW25H120DF2
STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.
STGW40N120KD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 240 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 25 V;
STGW80V60DF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 600 V;
STGWA40H65DFB2
STGWA40H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 72A IC, and 230W power dissipation. Ideal for power control applications due to its fast turn-off time of 158ns and built-in diode configuration. Operates b/w -55°C to 175°C temperature range in a rectangular package style.
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