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STGD8NC60KT4

STMicroelectronics

STGD8NC60KT4 by STMicroelectronics

STGD8NC60KT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 62W power dissipation. Suitable for surface mount applications, it operates up to 150 °C making it ideal for high-power electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,420 parts In-Stock

1+ parts

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7,420

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Anansix

USA . 1,706 parts In-Stock

1+ parts

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1,706

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Digiode

USA . 1,692 parts In-Stock

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1,692

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$1.493

100+ parts

$1.359

1k+ parts

$1.224

10k+ parts

-

150

$1.493

$1.359

$1.224

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IDEA Electronic Components Group

UK . 1,574 parts In-Stock

1+ parts

$1.561

100+ parts

-

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$1.405

10k+ parts

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1,574

$1.561

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$1.405

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MKK Technologies

India . 1,457 parts In-Stock

1+ parts

$2.936

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-

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1,457

$2.936

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DigiPath Technology Company

USA . 1,457 parts In-Stock

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$2.936

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1,457

$2.936

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AZTECH Wire

Italy . 47 parts In-Stock

1+ parts

$20.700

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47

$20.700

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Component Stockers USA

USA . 231 parts In-Stock

1+ parts

$99.990

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231

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Kepictronics

USA . 50,700 parts In-Stock

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50,700

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QUARKTWIN TECHNOLOGY LTD

USA . 27,542 parts In-Stock

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27,542

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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A-Z Elektronik GmbH

Germany . 4,920 parts In-Stock

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4,920

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Perfect Parts

USA . 2,668 parts In-Stock

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2,668

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Parana Technologies

USA . 995 parts In-Stock

1+ parts

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100+ parts

$1.867

1k+ parts

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10k+ parts

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995

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$1.867

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Corphita

USA . 760 parts In-Stock

1+ parts

-

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760

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Overview

Experience the power of innovation with the STGD8NC60KT4 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are perfect for a wide range of applications. With a maximum power dissipation of 62W and a maximum collector-emitter voltage of 600V, this N-CHANNEL IGBT is designed to provide reliable performance and efficiency. Trust in STMicroelectronics to deliver cutting-edge technology that exceeds expectations and brings value to your projects.

Feature Benefit Bullets

Polarity or Channel Type

N-CHANNEL - Provides better efficiency and performance compared to P-CHANNEL IGBTs.

Surface Mount

Allows for easy and convenient installation on PCBs or other surfaces.

Maximum Power Dissipation (Abs)

With a high value of 62 W, this IGBT can handle significant power loads without overheating.

Maximum Operating Temperature

Capable of operating at up to 150 °C, making it suitable for high-temperature environments.

Maximum Collector-Emitter Voltage

With a maximum of 600 V, this IGBT can handle high voltage applications with ease.

Maximum Gate-Emitter Voltage

A maximum of 20 V ensures reliable gate control and protection against voltage spikes.

Maximum Collector Current (IC)

Supports a maximum current of 15 A, suitable for medium power applications.

Maximum Gate-Emitter Threshold Voltage

With a threshold voltage of 6.5 V, this IGBT provides precise gate control for optimal performance.

Terminal Finish

MATTE TIN finish ensures good contact and reliability in different operating conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD8NC60KT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

STGD8NC60KT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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