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2PS18012E44G38553NOSA1

Infineon Technologies

2PS18012E44G38553NOSA1 by Infineon Technologies

2PS18012E44G38553NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and operating temperature of 150°C. It is designed for POWER CONTROL applications, featuring a COMPLEX configuration in a RECTANGULAR package style suitable for MICROELECTRONIC ASSEMBLY.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 2,653 parts In-Stock

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VNN

France . 1,056 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Digiode

USA . 271 parts In-Stock

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Modulus Dynamics

Lithuania . 573 parts In-Stock

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$1.089

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$1.045

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$1.002

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Microchip USA

USA . 267 parts In-Stock

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$6.240

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AZTECH Wire

Italy . 720 parts In-Stock

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$11.414

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Ampacity Inc.

Singapore . 1,489 parts In-Stock

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$29.050

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QUARKTWIN TECHNOLOGY LTD

USA . 27,145 parts In-Stock

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Continental Prestige Electronics

USA . 4,944 parts In-Stock

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Argo Parts USA

USA . 4,937 parts In-Stock

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Corphita

USA . 607 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unleash the power of precision with the 2PS18012E44G38553NOSA1 by Infineon Technologies. Crafted with excellence, this Insulated Gate Bipolar Transistor (IGBT) offers unparalleled quality and reliability for your power control needs. Whether you're in the automotive, industrial, or renewable energy sector, this N-CHANNEL transistor is designed to optimize performance and efficiency. Elevate your projects with the superior technology and innovative design of Infineon, delivering value and benefits that exceed expectations. Experience the difference with the 2PS18012E44G38553NOSA1 and unlock a world of possibilities.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high power efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: COMPLEX

Complex configurations offer better performance and efficiency compared to simple configurations, making this IGBT a reliable choice for power control applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and reliability in controlling power circuits.

Package Shape: RECTANGULAR

Rectangular packages provide a compact and efficient design, making it easier to integrate this IGBT into power control systems.

No. of Elements: 8

Having 8 elements allows for greater flexibility and control in power management, making this IGBT suitable for complex power control requirements.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly packages offer high reliability and performance in demanding applications, ensuring long-term efficiency in power control systems.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this IGBT can withstand high temperatures, ensuring stability and reliability in power control applications.

Maximum Collector-Emitter Voltage: 1200 V

A high maximum collector-emitter voltage of 1200V allows this IGBT to handle high voltage levels, making it suitable for a wide range of power control applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, offering good performance and durability in power control applications.

Case Connection: ISOLATED

Isolated case connection helps prevent electrical interference and ensures safe operation, making this IGBT a reliable choice for power control systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 2PS18012E44G38553NOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JESD-30 Code:

R-XXMA-X

No. of Elements:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Trade Compliance

2PS18012E44G38553NOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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