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HGTD3N60C3S

Harris Semiconductor

HGTD3N60C3S by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 33 W; Maximum Collector Current (IC): 6 A; No. of Elements: 1;

Median Price

$0.608

Lifecycle Status

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5

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1k+

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Rochester

USA . 300 parts In-Stock

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$0.608

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$0.504

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$0.450

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$0.450

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Digiode

USA . 886 parts In-Stock

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Vyrian

USA . 586 parts In-Stock

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$0.498

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ABC Electronics Ltd.

UK . 200 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Corphita

USA . 552 parts In-Stock

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$0.448

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A-Z Elektronik GmbH

Germany . 7,238 parts In-Stock

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Alle Elektronik GmbH

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Supply Digital

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Assy Fe

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTD3N60C3S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

275 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

455 ns

Nominal Turn On Time (ton):

15 ns

Trade Compliance

HGTD3N60C3S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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