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HGTD1N120BNS

Onsemi

HGTD1N120BNS by Onsemi

HGTD1N120BNS by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.9V and a max collector-emitter voltage of 1200V. Ideal for motor control applications, it has a max power dissipation of 60W and operates in temperatures ranging from -55 to 150°C.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Digiode

USA . 1,246 parts In-Stock

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Vyrian

USA . 656 parts In-Stock

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Nova Conductors

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EMSNET

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$1.064

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$0.968

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$0.872

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AZTECH Wire

Italy . 817 parts In-Stock

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Problanco Electronics

Mexico . 6,540 parts In-Stock

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TANS Electronics

Latvia . 3,925 parts In-Stock

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SupplyDigital Components

Austria . 3,733 parts In-Stock

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Supply Digital

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Speed Components Ltd (Excess)

Israel . 2,264 parts In-Stock

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Corphita

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Kulean Microsystems

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Bastille Electronics

Australia . 300 parts In-Stock

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UHIMA Technologies

Türkiye . 186 parts In-Stock

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Corohmni

South Africa . 90 parts In-Stock

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GreenTree Electronics

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Assy Fe

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Overview

Unlock the power of efficient motor control with the HGTD1N120BNS from Onsemi. As a leading manufacturer in insulated gate bipolar transistors (IGBT), Onsemi delivers top-notch quality and reliability. This N-channel transistor, with its fast rise and fall times, is perfect for a wide range of applications. Whether you're in the automotive, industrial, or consumer electronics industry, this IGBT offers exceptional performance and durability. Trust Onsemi to provide you with the value and benefits you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Provides good insulation properties and allows for cost-effective production.

Polarity or Channel Type - N-CHANNEL

Offers high speed and efficiency in switching applications.

Configuration - SINGLE

Simplifies circuit design and implementation.

Transistor Application - MOTOR CONTROL

Ideal for controlling the speed and direction of motors efficiently.

Surface Mount - YES

Enables easy and efficient PCB assembly.

Maximum Rise Time (tr) - 15 ns

Ensures fast switching speeds for improved performance.

Maximum VCEsat - 2.9 V

Low saturation voltage helps in reducing power losses.

Package Shape - RECTANGULAR

Facilitates easy mounting and heat dissipation.

Terminal Form - GULL WING

Provides reliable electrical connections and facilitates automated assembly.

Maximum Fall Time (tf) - 370 ns

Allows for quick turn-off of the transistor for efficiency.

Nominal Turn Off Time (toff) - 333 ns

Ensures precise control over turn-off timing.

No. of Terminals - 2

Simplifies the circuit layout and reduces complexity.

Maximum Power Dissipation (Abs) - 60 W

Can handle high power demands without overheating.

Package Style (Meter) - SMALL OUTLINE

Compact design for space-constrained applications.

Maximum Operating Temperature - 150 °C

Suitable for high-temperature environments.

Maximum Collector-Emitter Voltage - 1200 V

Allows for handling high voltages safely.

Transistor Element Material - SILICON

Provides good performance characteristics and durability.

Maximum Turn On Time (ton) - 32 ns

Ensures fast turn-on times for efficient operation.

Maximum Gate-Emitter Voltage - 20 V

Operates within safe voltage limits for reliable performance.

Minimum Operating Temperature - -55 °C

Suitable for use in a wide range of temperature conditions.

Maximum Collector Current (IC) - 5.3 A

Capable of handling moderate current loads.

Maximum Turn Off Time (toff) - 458 ns

Precision turn-off timing for optimal performance.

Terminal Position - SINGLE

Simplifies connection layout and improves reliability.

Case Connection - COLLECTOR

Enables efficient heat dissipation for reliable operation.

Nominal Turn On Time (ton) - 24 ns

Quick turn-on times for efficient performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTD1N120BNS attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Fall Time (tf):

370 ns

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

15 ns

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

458 ns

Nominal Turn Off Time (toff):

333 ns

Maximum Turn On Time (ton):

32 ns

Nominal Turn On Time (ton):

24 ns

Maximum VCEsat:

2.9 V

Trade Compliance

HGTD1N120BNS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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