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HGTD3N60B3S

Harris Semiconductor

HGTD3N60B3S by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 33 W; Maximum Collector Current (IC): 7 A; Package Body Material: PLASTIC/EPOXY;

Median Price

$0.630

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Rochester

USA . 944 parts In-Stock

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100+ parts

$0.608

1k+ parts

$0.504

10k+ parts

$0.450

944

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$0.608

$0.504

$0.450

DigiKey

USA . 944 parts In-Stock

1+ parts

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$0.630

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944

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$0.630

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Verical

USA . 944 parts In-Stock

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$0.630

10k+ parts

$0.562

944

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$0.630

$0.562

Distributors (In-Stock)

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Digiode

USA . 176 parts In-Stock

1+ parts

$0.473

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176

$0.473

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Vyrian

USA . 501 parts In-Stock

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$0.498

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501

$0.498

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ComSIT Distribution GmbH

Germany . 1,800 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 681 parts In-Stock

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$0.448

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681

$0.448

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Supply Digital

USA . 1,825 parts In-Stock

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Assy Fe

Spain . 638 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTD3N60B3S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS, ULTRA FAST SWITCHING

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

220 ns

Nominal Turn On Time (ton):

16 ns

Trade Compliance

HGTD3N60B3S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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