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NGTG30N60FWG

Onsemi

NGTG30N60FWG by Onsemi

NGTG30N60FWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 167W Pd. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.

Median Price

$3.700

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 18 parts In-Stock

1+ parts

$3.700

100+ parts

$2.930

1k+ parts

$2.220

10k+ parts

$1.720

18

$3.700

$2.930

$2.220

$1.720

Flip Electronics (Authorized)

USA . 580 parts In-Stock

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580

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Digiode

USA . 589 parts In-Stock

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$3.515

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589

$3.515

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Vyrian

USA . 8,872 parts In-Stock

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Flip Electronics

USA . 580 parts In-Stock

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580

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Distributors (Availability)

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.689

100+ parts

$1.537

1k+ parts

$1.385

10k+ parts

-

50

$1.689

$1.537

$1.385

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Corphita

USA . 450 parts In-Stock

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$3.330

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$3.330

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Corohmni

South Africa . 321 parts In-Stock

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$3.700

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321

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TANS Electronics

Latvia . 6,953 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 2,736 parts In-Stock

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Problanco Electronics

Mexico . 1,086 parts In-Stock

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Perfect Parts

USA . 813 parts In-Stock

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UHIMA Technologies

Türkiye . 505 parts In-Stock

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Kulean Microsystems

USA . 246 parts In-Stock

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Microchip USA

USA . 238 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Unlock the power of innovation with the NGTG30N60FWG by Onsemi. As a leading manufacturer in the industry, Onsemi is dedicated to delivering high-quality products that exceed customer expectations. The NGTG30N60FWG falls under the category of Insulated Gate Bipolar Transistors (IGBT), offering superior performance and reliability. With a maximum power dissipation of 167W and a maximum collector current of 60A, this N-CHANNEL transistor is ideal for a variety of applications. Experience the value and benefits that this product brings to your projects, from increased efficiency to enhanced functionality. Choose Onsemi for cutting-edge technology that empowers you to create without limits.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their higher efficiency and faster switching speeds compared to P-CHANNEL IGBTs, making them a good choice for high power applications.

Maximum Power Dissipation (Abs): 167 W

With a high maximum power dissipation, this IGBT can handle significant power loads without overheating, ensuring reliable performance in demanding conditions.

Maximum Operating Temperature: 150 °C

The IGBT can operate at high temperatures without compromising its performance, suitable for applications where heat dissipation is critical.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage allows the IGBT to handle high voltage applications with ease, making it versatile for various power supply designs.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage ensures reliable and safe operation of the IGBT, protecting it from overvoltage conditions that could damage the device.

Maximum Collector Current (IC): 60 A

With a high collector current rating, this IGBT can handle large current flows, suitable for high-power applications such as motor control and power inverters.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

The gate-emitter threshold voltage specifies the minimum voltage required to turn on the IGBT, ensuring precise control over the switching behavior of the device.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and longevity of the IGBT in various environmental conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGTG30N60FWG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-609 Code:

e3

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Trade Compliance

NGTG30N60FWG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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