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IXDR30N120

IXYS Corporation

IXDR30N120 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 50 A; Terminal Form: THROUGH-HOLE;

Median Price

$8.504

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 17 parts In-Stock

1+ parts

$8.504

100+ parts

-

1k+ parts

-

10k+ parts

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17

$8.504

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 11 parts In-Stock

1+ parts

$8.660

100+ parts

-

1k+ parts

-

10k+ parts

-

11

$8.660

-

-

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Andel Nordic

Denmark . 1,200 parts In-Stock

1+ parts

$24.000

100+ parts

-

1k+ parts

$16.803

10k+ parts

$16.803

1,200

$24.000

-

$16.803

$16.803

Perfect Parts

USA . 86 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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86

-

-

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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50

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-

-

-

Authorized Procurement Solutions

USA . 22 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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22

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDR30N120 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

570 ns

Nominal Turn On Time (ton):

170 ns

Trade Compliance

IXDR30N120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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