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IGW50N60T

Infineon Technologies

IGW50N60T by Infineon Technologies

IGW50N60T by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 396ns and can handle a max collector current of 100A, making it ideal for power control applications requiring high power dissipation up to 333W.

Median Price

$4.310

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 73 parts In-Stock

1+ parts

$4.310

100+ parts

$2.120

1k+ parts

$1.880

10k+ parts

$1.670

73

$4.310

$2.120

$1.880

$1.670

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 311 parts In-Stock

1+ parts

$3.942

100+ parts

-

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-

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311

$3.942

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Vyrian

USA . 438 parts In-Stock

1+ parts

$4.150

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-

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438

$4.150

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TME

Poland . 191 parts In-Stock

1+ parts

$4.370

100+ parts

$3.240

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-

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191

$4.370

$3.240

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 23,679 parts In-Stock

1+ parts

$1.807

100+ parts

$1.735

1k+ parts

$1.662

10k+ parts

-

23,679

$1.807

$1.735

$1.662

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Corphita

USA . 790 parts In-Stock

1+ parts

$3.735

100+ parts

-

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790

$3.735

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Andel Nordic

Denmark . 50 parts In-Stock

1+ parts

$42.840

100+ parts

-

1k+ parts

$29.986

10k+ parts

$29.986

50

$42.840

-

$29.986

$29.986

QUARKTWIN TECHNOLOGY LTD

USA . 24,960 parts In-Stock

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24,960

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Metaverse IC Inc.

Canada . 10,000 parts In-Stock

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10,000

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A-Z Elektronik GmbH

Germany . 7,584 parts In-Stock

1+ parts

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7,584

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Alle Elektronik GmbH

Germany . 1,156 parts In-Stock

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1,156

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Perfect Parts

USA . 265 parts In-Stock

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265

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Overview

Unlock the power of efficient and reliable power control with the IGW50N60T by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality products that meet the highest standards. The IGW50N60T belongs to the Insulated Gate Bipolar Transistors category, offering N-CHANNEL configuration for single applications. With a maximum collector-emitter voltage of 600V and a maximum gate-emitter voltage of 20V, this transistor provides optimal performance for all your power control needs. Trust Infineon to deliver superior technology that brings value and benefits to customers across various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the IGBT, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer lower on-state voltage drop and higher efficiency compared to P-channel IGBTs, making them suitable for power control applications.

Nominal Turn Off Time (toff): 396 ns

The fast turn-off time of 396 ns allows for efficient power control and switching operations, reducing energy losses and improving overall performance.

Maximum Power Dissipation (Abs): 333 W

With a maximum power dissipation of 333 W, this IGBT can handle high power loads efficiently, making it suitable for power control applications.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage of 600 V allows for the IGBT to be used in applications that require high voltage handling capabilities.

Maximum Collector Current (IC): 100 A

With a maximum collector current of 100 A, this IGBT can handle high current levels, making it suitable for power control applications that require high current handling.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW50N60T attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

FAST SWITCHING

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

396 ns

Nominal Turn On Time (ton):

60 ns

Trade Compliance

IGW50N60T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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