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IGW50N65F5

Infineon Technologies

IGW50N65F5 by Infineon Technologies

Infineon's IGW50N65F5 is an N-CHANNEL IGBT transistor with 650V VCEsat, 80A IC, and 305W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 205ns and operates b/w -40 to 175°C.

Median Price

$1.940

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,060 parts In-Stock

1+ parts

$1.940

100+ parts

$1.900

1k+ parts

$1.860

10k+ parts

-

3,060

$1.940

$1.900

$1.860

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 846 parts In-Stock

1+ parts

$1.843

100+ parts

-

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846

$1.843

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Vyrian

USA . 102 parts In-Stock

1+ parts

$1.940

100+ parts

-

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102

$1.940

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TME

Poland . 193 parts In-Stock

1+ parts

$3.660

100+ parts

$2.710

1k+ parts

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193

$3.660

$2.710

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 367 parts In-Stock

1+ parts

$1.746

100+ parts

-

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367

$1.746

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Modulus Dynamics

Lithuania . 5,183 parts In-Stock

1+ parts

$1.918

100+ parts

$1.841

1k+ parts

$1.765

10k+ parts

-

5,183

$1.918

$1.841

$1.765

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Perfect Parts

USA . 5,376 parts In-Stock

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5,376

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Overview

Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages, and high voltage DC-DC topologies commonly found in applications like uninterruptible power supplies (UPS), inverter welding machines, and switch-mode power supplies. The 650V TRENCHSTOP 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP 5 H5 family.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring long term reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-state voltage drops and higher current carrying capabilities, making them efficient for power control applications.

Configuration: SINGLE

Simplifies circuit design and installation, making it easier to integrate into systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency in controlling power systems.

Maximum VCEsat: 2.1 V

Low VCEsat value indicates lower power dissipation and higher efficiency in power switching applications.

Package Shape: RECTANGULAR

Rectangular shape provides ease of mounting and heat dissipation in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering for robust performance.

Nominal Turn Off Time (toff): 205 ns

Fast turn-off time ensures quick switching speed, reducing power losses and improving efficiency.

No. of Terminals: 3

Optimal number of terminals for simplified connections and integration in circuits.

Maximum Power Dissipation (Abs): 305 W

High power dissipation capability allows for handling large power loads and maintaining reliable operation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mounting and thermal management for efficient heat dissipation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in harsh environments.

Maximum Collector-Emitter Voltage: 650 V

High voltage rating allows for handling high voltage applications with safety and reliability.

Transistor Element Material: SILICON

Silicon material provides high efficiency and reliability in power switching applications.

Maximum Gate-Emitter Voltage: 20 V

Adequate gate-emitter voltage rating ensures safe and reliable switching operation.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for operation in extreme temperature conditions.

Maximum Collector Current (IC): 80 A

High collector current rating allows for handling high current loads with efficiency.

Maximum Gate-Emitter Threshold Voltage: 4.8 V

Gate-emitter threshold voltage ensures precise control over the switching characteristics of the transistor.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and ensures reliable connections in varied environments.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation, making it easier to integrate into systems.

Case Connection: COLLECTOR

Collector case connection provides efficient thermal management and low on-state losses.

Nominal Turn On Time (ton): 35 ns

Fast turn-on time ensures quick and precise control over power switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW50N65F5 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

4.8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

205 ns

Nominal Turn On Time (ton):

35 ns

Maximum VCEsat:

2.1 V

Trade Compliance

IGW50N65F5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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