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IGW50N60H3FKSA1

Infineon Technologies

IGW50N60H3FKSA1 by Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; JEDEC-95 Code: TO-247;

Median Price

$4.378

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 209 parts In-Stock

1+ parts

$4.030

100+ parts

$2.090

1k+ parts

$1.630

10k+ parts

-

209

$4.030

$2.090

$1.630

-

RS (Exports)

UK . 235 parts In-Stock

1+ parts

$4.086

100+ parts

$3.407

1k+ parts

$3.151

10k+ parts

-

235

$4.086

$3.407

$3.151

-

Chip1Stop

Japan . 230 parts In-Stock

1+ parts

$4.670

100+ parts

$3.010

1k+ parts

-

10k+ parts

-

230

$4.670

$3.010

-

-

DigiKey

USA . 23 parts In-Stock

1+ parts

$4.680

100+ parts

$2.605

1k+ parts

$1.811

10k+ parts

$1.676

23

$4.680

$2.605

$1.811

$1.676

Element14

Singapore . 460 parts In-Stock

1+ parts

$5.453

100+ parts

$3.260

1k+ parts

$2.660

10k+ parts

-

460

$5.453

$3.260

$2.660

-

Arrow

USA . 2,050 parts In-Stock

1+ parts

$5.523

100+ parts

$3.121

1k+ parts

$2.236

10k+ parts

-

2,050

$5.523

$3.121

$2.236

-

Verical

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$3.025

1k+ parts

$2.103

10k+ parts

$1.946

500

-

$3.025

$2.103

$1.946

Future Electronics

Canada . 240 parts In-Stock

1+ parts

-

100+ parts

$2.530

1k+ parts

$2.430

10k+ parts

$2.390

240

-

$2.530

$2.430

$2.390

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 600 parts In-Stock

1+ parts

$3.686

100+ parts

-

1k+ parts

-

10k+ parts

-

600

$3.686

-

-

-

TME

Poland . 88 parts In-Stock

1+ parts

$4.010

100+ parts

$2.380

1k+ parts

$1.900

10k+ parts

-

88

$4.010

$2.380

$1.900

-

Chip Stock

USA . 16,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,100

-

-

-

-

Vyrian

USA . 3,090 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,090

-

-

-

-

Micros

Poland . 30 parts In-Stock

1+ parts

-

100+ parts

$4.173

1k+ parts

-

10k+ parts

-

30

-

$4.173

-

-

Partservice

France . 30 parts In-Stock

1+ parts

-

100+ parts

$4.115

1k+ parts

$4.115

10k+ parts

$4.115

30

-

$4.115

$4.115

$4.115

Micros sp.j. W. Kędra i J. Lic

Poland . 30 parts In-Stock

1+ parts

-

100+ parts

$4.408

1k+ parts

$4.408

10k+ parts

$4.408

30

-

$4.408

$4.408

$4.408

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 4,932 parts In-Stock

1+ parts

$1.587

100+ parts

$1.524

1k+ parts

$1.460

10k+ parts

-

4,932

$1.587

$1.524

$1.460

-

Corphita

USA . 232 parts In-Stock

1+ parts

$3.492

100+ parts

-

1k+ parts

-

10k+ parts

-

232

$3.492

-

-

-

Component Stockers USA

USA . 522 parts In-Stock

1+ parts

$5.040

100+ parts

$3.420

1k+ parts

-

10k+ parts

-

522

$5.040

$3.420

-

-

Continental Prestige Electronics

USA . 321 parts In-Stock

1+ parts

$5.310

100+ parts

$3.000

1k+ parts

$2.540

10k+ parts

-

321

$5.310

$3.000

$2.540

-

Microchip USA

USA . 2,002 parts In-Stock

1+ parts

$18.200

100+ parts

-

1k+ parts

-

10k+ parts

-

2,002

$18.200

-

-

-

Lixinc

USA . 10,912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,912

-

-

-

-

Perfect Parts

USA . 3,445 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,445

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW50N60H3FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

297 ns

Nominal Turn On Time (ton):

54 ns

Trade Compliance

IGW50N60H3FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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