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NGP15N41ACLG

Onsemi

NGP15N41ACLG by Onsemi

NGP15N41ACLG by Onsemi is an N-CHANNEL IGBT with tr of 7000 ns and tf of 15000 ns. It has a max power dissipation of 107W, suitable for applications requiring high collector-emitter voltage up to 440V. Ideal for industrial motor drives and power inverters due to its max operating temp of 175 °C and IC of 15A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,928 parts In-Stock

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Vyrian

USA . 1,030 parts In-Stock

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SupplyDigital Components

Austria . 5,799 parts In-Stock

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Kulean Microsystems

USA . 4,340 parts In-Stock

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Corphita

USA . 2,499 parts In-Stock

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TANS Electronics

Latvia . 1,938 parts In-Stock

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Problanco Electronics

Mexico . 1,342 parts In-Stock

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UHIMA Technologies

Türkiye . 783 parts In-Stock

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Corohmni

South Africa . 143 parts In-Stock

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Overview

Unleash the power of innovation with the NGP15N41ACLG by Onsemi! Crafted with precision and reliability in mind, this N-CHANNEL Insulated Gate Bipolar Transistor (IGBT) is designed to revolutionize your electronic projects. From enhancing motor control systems to improving renewable energy applications, this IGBT offers unparalleled performance and efficiency. Elevate your designs with the NGP15N41ACLG and experience the quality and value that only Onsemi can deliver.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are commonly used in power electronics applications due to their higher electron mobility and lower on-state resistance, making them suitable for high power switching operations.

Maximum Rise Time (tr): 7000 ns

The fast rise time allows for quick switching between on and off states, improving the efficiency and performance of the IGBT in various applications.

Maximum Fall Time (tf): 15000 ns

The fast fall time ensures rapid turn-off of the IGBT, reducing switching losses and improving overall efficiency in power electronics systems.

Maximum Power Dissipation (Abs): 107 W

With a high power dissipation rating, this IGBT can handle significant power loads without overheating, making it reliable for demanding applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows the IGBT to withstand elevated thermal conditions, ensuring stable performance even in harsh environments.

Maximum Collector-Emitter Voltage: 440 V

The high collector-emitter voltage rating makes this IGBT suitable for applications requiring high voltage handling capabilities, providing reliable operation in various scenarios.

Maximum Gate-Emitter Voltage: 15 V

The maximum gate-emitter voltage ensures the IGBT is protected from voltage spikes, enhancing its durability and reliability in power electronics circuits.

Maximum Collector Current (IC): 15 A

The high collector current rating allows the IGBT to handle large current flows, making it suitable for high-power applications where high current switching is required.

Maximum Gate-Emitter Threshold Voltage: 1.9 V

The low gate-emitter threshold voltage ensures efficient switching of the IGBT, reducing power losses and improving performance in power electronics systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGP15N41ACLG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

440 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

1.9 V

Maximum Gate-Emitter Voltage:

15 V

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Trade Compliance

NGP15N41ACLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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