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NXH100B120H3Q0SG

Onsemi

NXH100B120H3Q0SG by Onsemi

NXH100B120H3Q0SG by Onsemi is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a VCEsat of 2.3V, IC of 50A, and Pmax of 186W. Ideal for power control applications due to its fast ton of 61ns and toff of 291ns at temperatures ranging from -40 °C to +150°C.

Median Price

$67.240

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 22 parts In-Stock

1+ parts

$57.890

100+ parts

$46.060

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22

$57.890

$46.060

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Mouser Electronics

USA . 24 parts In-Stock

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$67.240

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24

$67.240

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DigiKey

USA . 20 parts In-Stock

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$67.250

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$51.236

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20

$67.250

$51.236

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Newark

USA . 32 parts In-Stock

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$69.260

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32

$69.260

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Element14

Singapore . 22 parts In-Stock

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$97.220

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$78.290

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22

$97.220

$78.290

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EBV Elektronik

Germany . 576 parts In-Stock

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Rochester

USA . 550 parts In-Stock

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$47.370

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$42.380

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$39.890

550

-

$47.370

$42.380

$39.890

Verical

USA . 216 parts In-Stock

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$54.148

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216

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$54.148

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Digiode

USA . 1,077 parts In-Stock

1+ parts

$44.916

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1,077

$44.916

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Vyrian

USA . 3,864 parts In-Stock

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3,864

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TME

Poland . 576 parts In-Stock

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$60.450

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576

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$60.450

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NAC Semi

USA . 456 parts In-Stock

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$125.280

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$113.890

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456

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$125.280

$113.890

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Flip Electronics

USA . 216 parts In-Stock

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216

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Corphita

USA . 2,339 parts In-Stock

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$42.552

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$42.552

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Corohmni

South Africa . 317 parts In-Stock

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$47.280

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$47.280

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Continental Prestige Electronics

USA . 32 parts In-Stock

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$93.420

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$93.420

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Microchip USA

USA . 6,498 parts In-Stock

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$207.276

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6,498

$207.276

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TANS Electronics

Latvia . 8,357 parts In-Stock

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SupplyDigital Components

Austria . 8,319 parts In-Stock

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Kulean Microsystems

USA . 4,023 parts In-Stock

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4,023

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Problanco Electronics

Mexico . 3,863 parts In-Stock

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UHIMA Technologies

Türkiye . 615 parts In-Stock

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Overview

Looking for a reliable Insulated Gate Bipolar Transistor (IGBT) for power control applications? Look no further than the NXH100B120H3Q0SG by Onsemi. With its N-CHANNEL polarity and COMMON COLLECTOR configuration, this product offers high-quality performance and durability. Designed with 2 elements, built-in diode, and thermistor, it provides maximum power dissipation of 186W and a collector-emitter voltage of 1200V. Perfect for a wide range of applications, this IGBT ensures efficient power control with a turn-off time of 291ns and a turn-on time of 61ns. Upgrade your power systems with the NXH100B120H3Q0SG and experience enhanced reliability and performance like never before.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel design allows for efficient power control and high-speed switching, making this product suitable for power applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and reliability in high-power systems.

Maximum VCEsat: 2.3 V

Low VCEsat ensures minimal voltage drop across the transistor, leading to higher efficiency and reduced power dissipation.

Maximum Power Dissipation (Abs): 186 W

High power dissipation capacity allows for handling of large power loads, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 1200 V

High maximum collector-emitter voltage rating ensures compatibility with high-voltage systems, offering versatility in design and application.

Maximum Collector Current (IC): 50 A

High collector current rating allows for handling of large current flows, making it suitable for power applications requiring high currents.

Nominal Turn On Time (ton): 61 ns

Fast turn-on time ensures quick response and high switching speeds, crucial for power control applications that require rapid switching.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NXH100B120H3Q0SG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

RC-IGBT

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X22

No. of Elements:

2

No. of Terminals:

22

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

291 ns

Nominal Turn On Time (ton):

61 ns

Maximum VCEsat:

2.3 V

Trade Compliance

NXH100B120H3Q0SG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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