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NGB18N40CLBT4

Onsemi

NGB18N40CLBT4 by Onsemi

NGB18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.

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Vyrian

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Digiode

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AZTECH Wire

Italy . 62 parts In-Stock

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Ampacity Inc.

Singapore . 169 parts In-Stock

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$54.050

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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UHIMA Technologies

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Overview

Upgrade your automotive ignition system with the NGB18N40CLBT4 from Onsemi. This high-quality Insulated Gate Bipolar Transistor (IGBT) is designed with a built-in diode and resistor for optimal performance. With a maximum collector-emitter voltage of 430V and a peak reflow temperature of 235 °C, this N-channel transistor offers reliability and efficiency in various applications. Trust Onsemi's expertise in semiconductor manufacturing to deliver exceptional value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulating properties and is cost-effective.

Polarity or Channel Type: N-CHANNEL

Enhances performance and efficiency in certain applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space.

Transistor Application: AUTOMOTIVE IGNITION

Suitable for high voltage and power applications like automotive ignition systems.

Surface Mount: YES

Enables easy and convenient assembly on PCBs.

Maximum Rise Time (tr): 7000 ns

Provides fast switching performance.

Package Shape: RECTANGULAR

Facilitates easier handling and mounting.

Terminal Form: GULL WING

Promotes better thermal performance.

Maximum Fall Time (tf): 15000 ns

Ensures efficient switching operation.

Nominal Turn Off Time (toff): 13000 ns

Helps in controlling the switching characteristics.

No. of Terminals: 2

Simplifies the connection interface.

Maximum Power Dissipation (Abs): 115 W

Allows for high power handling capability.

Package Style (Meter): SMALL OUTLINE

Saves space and provides better component density.

Maximum Operating Temperature: 175 °C

Suitable for applications requiring high-temperature operation.

Maximum Collector-Emitter Voltage: 430 V

Allows for handling high voltage applications.

Transistor Element Material: SILICON

Provides good electrical characteristics and reliability.

Maximum Gate-Emitter Voltage: 18 V

Protects the transistor from overvoltage conditions.

Maximum Collector Current (IC): 18 A

Handles high current applications with ease.

Maximum Gate-Emitter Threshold Voltage: 1.9 V

Ensures proper turn-on and turn-off characteristics.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity.

Terminal Position: SINGLE

Simplifies the connection process.

Case Connection: COLLECTOR

Improves heat dissipation and thermal management.

Peak Reflow Temperature °C: 235

Meets industry standards for solder reflow processes.

Nominal Turn On Time (ton): 5200 ns

Ensures fast turn-on response for quick switching operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGB18N40CLBT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

430 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

1.9 V

Maximum Gate-Emitter Voltage:

18 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

13000 ns

Nominal Turn On Time (ton):

5200 ns

Trade Compliance

NGB18N40CLBT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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