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NGB18N40ACLBT4G

Onsemi

NGB18N40ACLBT4G by Onsemi

NGB18N40ACLBT4G by Onsemi is an N-CHANNEL IGBT with 430V VCE, 18A IC, and 115W power dissipation. Ideal for applications requiring high power switching in surface mount designs with a max operating temperature of 175 °C.

Median Price

$4.130

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 400 parts In-Stock

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$4.130

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$2.190

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Digiode

USA . 717 parts In-Stock

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$3.924

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717

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J2 Sourcing AB

Sweden . 11,717 parts In-Stock

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Infinite Electronics LLP

India . 4,000 parts In-Stock

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Vyrian

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Component Stockers USA

USA . 424 parts In-Stock

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$1.430

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$1.160

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Corphita

USA . 697 parts In-Stock

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$3.717

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Corohmni

South Africa . 496 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Problanco Electronics

Mexico . 6,428 parts In-Stock

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Kulean Microsystems

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QUARKTWIN TECHNOLOGY LTD

USA . 3,996 parts In-Stock

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SupplyDigital Components

Austria . 3,208 parts In-Stock

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TANS Electronics

Latvia . 3,095 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 825 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

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Overview

Upgrade your electronic devices with the NGB18N40ACLBT4G by Onsemi, a top-tier manufacturer known for its superior quality and reliability. As part of the Insulated Gate Bipolar Transistors (IGBT) category, this N-CHANNEL transistor offers exceptional performance and durability for a wide range of applications. With its surface mount design, high power dissipation, and impressive operating temperature range, the NGB18N40ACLBT4G provides unmatched value and benefits to customers looking for top-notch components for their projects. Trust Onsemi to deliver excellence in every aspect of your electronics needs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state voltage drop and higher current carrying capabilities, making them suitable for high power applications.

Surface Mount: Yes

Surface mount IGBTs are easy to install and are more compact, saving space on the PCB.

Maximum Rise Time (tr): 7000 ns

Fast rise time helps in reducing switching losses and improving overall efficiency of the system.

Maximum Fall Time (tf): 15000 ns

Having a long fall time allows for better controllability and stability in high power applications.

Maximum Power Dissipation (Abs): 115 W

With a high power dissipation, this IGBT can handle high current and voltage levels without getting damaged.

Maximum Operating Temperature: 175 °C

Operating at high temperatures without compromising performance ensures reliability in demanding environments.

Maximum Collector-Emitter Voltage: 430 V

High collector-emitter voltage rating provides robustness and protection against voltage spikes.

Maximum Gate-Emitter Voltage: 18 V

Having a high gate-emitter voltage tolerance ensures the IGBT can handle varying gate signals without failure.

Maximum Collector Current (IC): 18 A

Capable of handling high current loads, making it suitable for power electronics applications.

Maximum Gate-Emitter Threshold Voltage: 1.9 V

Having a low gate-emitter threshold voltage ensures efficient switching and minimal power losses.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable connections for the IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGB18N40ACLBT4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

430 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

1.9 V

Maximum Gate-Emitter Voltage:

18 V

JESD-609 Code:

e3

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

NGB18N40ACLBT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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