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NGB15N41CLT4

Onsemi

NGB15N41CLT4 by Onsemi

NGB15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,379 parts In-Stock

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Digiode

USA . 1,741 parts In-Stock

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Cyclops Electronics Ltd

UK . 300 parts In-Stock

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AZTECH Wire

Italy . 211 parts In-Stock

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$15.250

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Kulean Microsystems

USA . 8,092 parts In-Stock

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TANS Electronics

Latvia . 5,930 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,313 parts In-Stock

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SupplyDigital Components

Austria . 5,067 parts In-Stock

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Problanco Electronics

Mexico . 3,094 parts In-Stock

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Corphita

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Corohmni

South Africa . 50 parts In-Stock

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UHIMA Technologies

Türkiye . 30 parts In-Stock

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Overview

Unlock the potential of your automotive ignition systems with the NGB15N41CLT4 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are designed for efficiency and reliability. This N-channel transistor boasts a single configuration with a built-in diode and resistor, making it perfect for automotive applications. With a maximum operating temperature of 175 °C and a collector-emitter voltage of 440V, this transistor offers exceptional performance and durability. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

Offers high efficiency and low conduction losses, making it suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space, making it more convenient for automotive ignition systems.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring optimal performance and reliability.

Surface Mount: YES

Allows for easy installation onto circuit boards, improving efficiency and reducing assembly time.

Maximum Rise Time (tr): 7000 ns

Provides fast switching speeds, enhancing overall performance and efficiency in automotive ignition.

Package Shape: RECTANGULAR

Makes the product compatible with standard mounting techniques, increasing versatility in applications.

Terminal Form: GULL WING

Offers a secure and reliable connection, ensuring stable operation in automotive environments.

Maximum Fall Time (tf): 15000 ns

Provides quick turn-off times, reducing losses and improving efficiency in automotive ignition systems.

Nominal Turn Off Time (toff): 15500 ns

Ensures precise control over turn-off events, optimizing performance in automotive ignition applications.

No. of Terminals: 2

Simplifies installation and connection, making it user-friendly for automotive technicians.

Maximum Power Dissipation (Abs): 107 W

Handles high power levels effectively, ensuring reliable operation in demanding automotive environments.

Package Style (Meter): SMALL OUTLINE

Compact size allows for space-saving designs and easy integration into automotive ignition systems.

Maximum Operating Temperature: 175 °C

Withstands high temperatures, ensuring reliable performance in automotive applications.

Maximum Collector-Emitter Voltage: 440 V

Handles high voltage levels safely, making it suitable for automotive ignition systems.

Transistor Element Material: SILICON

Provides high reliability and efficiency, ensuring long-term performance in automotive ignition applications.

Maximum Gate-Emitter Voltage: 15 V

Offers reliable gate control, ensuring precise switching in automotive ignition systems.

Maximum Collector Current (IC): 15 A

Handles high current levels efficiently, making it suitable for automotive ignition applications.

Maximum Gate-Emitter Threshold Voltage: 2.1 V

Provides reliable gate triggering, ensuring smooth operation in automotive ignition systems.

Terminal Finish: TIN LEAD

Ensures good electrical conductivity and solderability, facilitating easy installation in automotive circuits.

Terminal Position: SINGLE

Simplifies wiring and connections, making installation hassle-free for automotive technicians.

Case Connection: COLLECTOR

Allows for easy connection to external components, ensuring compatibility with automotive ignition systems.

Peak Reflow Temperature °C: 235

Withstands high temperature soldering processes, ensuring reliable assembly in automotive applications.

Nominal Turn On Time (ton): 5700 ns

Provides fast turn-on times, enhancing efficiency and performance in automotive ignition systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGB15N41CLT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

440 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

15 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

15500 ns

Nominal Turn On Time (ton):

5700 ns

Trade Compliance

NGB15N41CLT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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