Loading...

NGB15N41CLT4G

Onsemi

NGB15N41CLT4G by Onsemi

NGB15N41CLT4G by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Collector Current of 15A. It features a built-in diode and resistor, making it ideal for automotive ignition applications. With a small outline package style and Gull Wing terminal form, it offers high power dissipation up to 107W in surface mount configurations.

Median Price

$1.162

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 134,000 parts In-Stock

1+ parts

-

100+ parts

$1.140

1k+ parts

$0.946

10k+ parts

$0.844

134,000

-

$1.140

$0.946

$0.844

Verical

USA . 128,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.183

10k+ parts

$1.054

128,000

-

-

$1.183

$1.054

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 258 parts In-Stock

1+ parts

$0.885

100+ parts

-

1k+ parts

-

10k+ parts

-

258

$0.885

-

-

-

Vyrian

USA . 803 parts In-Stock

1+ parts

$0.932

100+ parts

-

1k+ parts

-

10k+ parts

-

803

$0.932

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,469 parts In-Stock

1+ parts

$0.839

100+ parts

-

1k+ parts

-

10k+ parts

-

2,469

$0.839

-

-

-

Corohmni

South Africa . 186 parts In-Stock

1+ parts

$0.932

100+ parts

-

1k+ parts

-

10k+ parts

-

186

$0.932

-

-

-

Component Stockers USA

USA . 105,268 parts In-Stock

1+ parts

$0.960

100+ parts

$0.900

1k+ parts

$0.820

10k+ parts

$0.820

105,268

$0.960

$0.900

$0.820

$0.820

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.762

100+ parts

$1.603

1k+ parts

$1.445

10k+ parts

-

3,000

$1.762

$1.603

$1.445

-

Continental Prestige Electronics

USA . 138,000 parts In-Stock

1+ parts

-

100+ parts

$0.752

1k+ parts

-

10k+ parts

-

138,000

-

$0.752

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 22,030 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22,030

-

-

-

-

Kepictronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Problanco Electronics

Mexico . 7,870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,870

-

-

-

-

Kulean Microsystems

USA . 7,410 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,410

-

-

-

-

Microchip USA

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

TANS Electronics

Latvia . 2,853 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,853

-

-

-

-

SupplyDigital Components

Austria . 1,949 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,949

-

-

-

-

UHIMA Technologies

Türkiye . 812 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

812

-

-

-

-

Perfect Parts

USA . 627 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

627

-

-

-

-

Authorized Procurement Solutions

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

GreenTree Electronics

Israel . 65 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

65

-

-

-

-

Overview

Discover the power and reliability of the NGB15N41CLT4G by Onsemi, a top-tier manufacturer known for cutting-edge technology and superior quality. This Insulated Gate Bipolar Transistor (IGBT) is designed for automotive ignition applications, offering unparalleled performance and efficiency. With a single configuration featuring a built-in diode and resistor, this IGBT ensures seamless operation and maximum power dissipation of 107W. Trust in Onsemi to deliver innovative solutions that elevate your projects to new heights. Choose the NGB15N41CLT4G for exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor, improving its reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-state voltage and higher switching speeds compared to P-Channel IGBTs, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce the need for additional components, saving space and cost.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring reliable performance in challenging environments.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving assembly time and minimizing footprint.

Maximum Power Dissipation (Abs): 107 W

Capable of handling high power levels, making it suitable for demanding automotive ignition applications.

Maximum Operating Temperature: 175 °C

The high operating temperature range allows for reliable operation in automotive environments where temperature fluctuations are common.

Maximum Collector-Emitter Voltage: 440 V

Can withstand high voltage levels, making it suitable for automotive ignition systems that require high voltage switching.

Maximum Collector Current (IC): 15 A

Capable of handling high current levels, making it suitable for automotive ignition applications that require high current switching.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGB15N41CLT4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

440 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

15 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

15500 ns

Nominal Turn On Time (ton):

5700 ns

Trade Compliance

NGB15N41CLT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7