Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NGTB15N120IHWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 385ns toff. It is used for power control applications due to its single configuration with built-in diode. The transistor's package style is flange mount with a plastic/epoxy body material.
Median Price
$6.170
Lifecycle Status
Suppliers In-Stock
5
In-Stock Inventory
1k+
Chip1Stop
1+ parts
100+ parts
-
1k+ parts
10k+ parts
Flip Electronics (Authorized)
Digiode
$5.862
Vyrian
Flip Electronics
Corphita
$5.553
Corohmni
Ampacity Inc.
$11.410
AZTECH Wire
$19.370
Kulean Microsystems
SupplyDigital Components
Problanco Electronics
TANS Electronics
Perfect Parts
UHIMA Technologies
GreenTree Electronics
Authorized Procurement Solutions
Provides good insulation properties, ensuring safe operation and protection of internal components.
Offers better efficiency and lower conduction losses compared to P-channel devices.
Simplifies circuit design and reduces component count, saving space and cost.
Optimized for high-power applications, providing efficient and reliable power control.
Facilitates easy mounting and integration into various electronic systems.
Allows for secure and reliable connections on a circuit board.
Fast turn-off time minimizes switching losses and improves overall efficiency.
Simple and straightforward connectivity for the device in a circuit.
Enables easy mounting and heat dissipation in various applications.
Allows for high voltage operation, suitable for demanding industrial applications.
Provides reliable and consistent performance over a wide range of operating conditions.
Capable of handling high current levels, making it ideal for power control applications.
Ensures good conductivity and corrosion resistance for long-lasting performance.
Simplified connection setup and better organization in a circuit design.
Insulated Gate Bipolar Transistors (IGBT) NGTB15N120IHWG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
NGTB15N120IHWG Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev EOL 18/Oct/2018
PCN Assembly/Origin - Mult Dev Mask Chg 13/Nov/2019
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BSS123,215
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
OHN3140U
Tt Electronics Plc
OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.
SS14
Jinan Jingheng Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
SMBJ18CA
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
BSS138BKW,115
NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
DP83848IVVX/NOPB
Texas Instruments
Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SN65HVD230DR
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
1N4148
Dc Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Philips Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138DW-7-F
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
Rectron
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
Bkc Semiconductors
HGTP10N120BN
Onsemi
The Onsemi HGTP10N120BN is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. Ideal for MOTOR CONTROL applications, it has a rise time of 15ns and can handle up to 35A collector current.
IRG4BC20UD-STRL
International Rectifier
IRG4BC20UD-STRL by International Rectifier is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 320ns, making it suitable for power control applications requiring fast switching speeds. This IGBT comes in a small outline package with gull wing terminals for surface mount assembly.
FGH40N60SMD
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
FB10R06KL4GB1
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V;
HGTG20N60B3D
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 40 A; No. of Terminals: 3;
HGT1S10N120BNST
HGT1S10N120BNST by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. It is designed for motor control applications, featuring a rise time of 15ns and a power dissipation of 298W. This single configuration transistor operates b/w -55 to 150 °C and has a gate-emitter voltage of up to 20V.
CM150TX-24S
Powerex
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1150 W; Maximum Collector Current (IC): 150 A; Terminal Form: UNSPECIFIED;
HGTG40N60B3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR;
IKW75N65EH5XKSA1
Infineon Technologies
IKW75N65EH5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 90A, ideal for POWER CONTROL applications. It has a package style of FLANGE MOUNT, operating temperature range from -40 to 175 °C, and a turn-off time of 215ns.
STGW40H60DLFB
STMicroelectronics
STGW40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. It operates up to 175°C making it suitable for high-power applications like motor drives and inverters.
FS75R07W2E3B11ABOMA1
Infineon Technologies' FS75R07W2E3B11ABOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 95A, and max. collector-emitter voltage of 650V. Ideal for power control applications due to its complex configuration and fast turn on/off times (44ns/258ns). Package style: Flange mount with isolated case connection.
FP40R12KT3BOSA1
FP40R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 55A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.
SK15DGDL126ET
Semikron International
SK15DGDL126ET by Semikron International is an N-CHANNEL IGBT with 1200V VCEsat, 22A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
IRG4BC20UD-STRR
IRG4BC20UD-STRR by International Rectifier is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 13A max collector current. It has a built-in diode, 170ns fall time, and 320ns turn off time. Ideal for power control applications requiring high power dissipation up to 60W in surface mount configurations.
FF600R12ME4EB11BOSA1
Infineon's FF600R12ME4EB11BOSA1 is a N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has VCEsat of 2.1V, toff of 700ns, and VCEmax of 1200V. Ideal for power control applications due to its common emitter configuration and max operating temp of 150°C.
CM900DU-24NF
Mitsubishi Electric
Mitsubishi Electric's CM900DU-24NF is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.5V and can handle up to 900A collector current, making it ideal for high-power control applications. With a max power dissipation of 2550W and operating temperature of 150°C, it offers reliable performance in demanding environments.
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Transistor Application: POWER CONTROL;
IRG4BC30FD-SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY;
IKZ75N65ES5XKSA1
IKZ75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package and THROUGH-HOLE terminals make it suitable for various industrial uses.
CM200DY-12NF
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 200 A; Qualification: Not Qualified;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NGTB40N120FL3WG
NGTB40N120FL3WG by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.95V and a max collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 326ns and a max operating temperature of 175°C.
NGTB50N120FL2WG
NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.
NGTB20N120IHRWG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 384 W; Maximum Collector Current (IC): 40 A; Terminal Finish: Matte Tin (Sn) - annealed; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
NGTB40N120FL2WG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 535 W; Maximum Collector Current (IC): 80 A; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
NGTB25N120FL3WG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 50 A; Terminal Form: THROUGH-HOLE;
NGTB15N120FLWG
NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
NGTB60N65FL2WG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 100 A; No. of Terminals: 3;
NGTB03N60R2DT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 49 W; Maximum Collector Current (IC): 9 A; Moisture Sensitivity Level (MSL): 1;
NGTB15N120LWG
NGTB15N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 229W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 435ns.
NGTB30N120LWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 560 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
NGTB15N120IHRWG
Insulated Gate Bipolar Transistors; Terminal Finish: Matte Tin (Sn) - annealed; JESD-609 Code: e3;
NGTB40N120S3WG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 160 A; No. of Elements: 1;
NGTB15N120FL2WG
NGTB15N120FL2WG by Onsemi is an N-CHANNEL IGBT with 294W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control units.
NGTB25N120FL2WG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 50 A; JESD-609 Code: e3; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
NGTB30N120IHSWG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 192 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
NGTB50N60FLWG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 223 W; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Finish: Tin (Sn);
NGTB10N60R2DT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 72 W; Maximum Collector Current (IC): 20 A; Case Connection: COLLECTOR;
NGTB40N120FLWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;
NGTB40N120SWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 535 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
NGTB20N120IHSWG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved