Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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AFGHL40T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 230ns. The package style is FLANGE MOUNT with through-hole terminals in a RECTANGULAR shape.
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The use of plastic/epoxy as the package body material makes this IGBT lightweight and durable, ideal for applications where weight and portability are important factors.
N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel IGBTs, making this product a good choice for power control applications where energy efficiency is a priority.
The low VCEsat value of 2.4V indicates that this IGBT has low saturation voltage, leading to reduced power dissipation and heat generation, making it suitable for high-power applications.
With a maximum power dissipation of 400W, this IGBT can handle high power levels efficiently, ensuring reliable operation in demanding power control applications.
The high maximum collector-emitter voltage rating of 1200V enables this IGBT to withstand high voltage spikes and surges, making it suitable for power control applications where voltage regulation is critical.
Insulated Gate Bipolar Transistors (IGBT) AFGHL40T120RHD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
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AFGHL40T120RHD Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Packaging 08/Feb/2022
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
FDC5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
SMBJ18CA
Continental Device India
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SDR0604-101KL
Bourns
SDR0604-101KL by Bourns is a surface mount fixed inductor with a nominal inductance of 100 uH. It is a general purpose inductor suitable for power applications, with a max rated current of 0.52 A and a self-resonance frequency of 9 MHz.
LM555CM
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
DS18B20U
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Equivalence Code: TSSOP8,.19;
LL4148
TDK
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
1N4148WT
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Vishay Intertechnology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
LM2675M-ADJ/NOPB
Texas Instruments
LM2675M-ADJ/NOPB by Texas Instruments is a voltage-mode switching regulator with 1A output current, 37V max output voltage, and 260kHz max switching frequency. Ideal for automotive applications due to its -40°C to 125°C operating temperature range and compact small outline package design.
Panjit International
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
SS14
Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Itt Cannon
CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;
Daco Semiconductor
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
C1210C104K5RACTU
KEMET Corporation
KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.
SGB02N120ATMA1
Infineon Technologies
SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
IKP40N65F5XKSA1
IKP40N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for power control applications due to its fast turn-off time (toff) of 200ns and high collector-emitter voltage rating of 650V. Package style is flange mount with through-hole terminals.
FF450R12ME4BOSA1
FF450R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 675A. This rectangular package IGBT is suitable for applications requiring high power switching capabilities at temperatures up to 150°C.
SGW20N60
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
FGL60N100BNTDTU
FGL60N100BNTDTU by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1000V and a Max Collector Current of 60A. It has a Nominal Turn Off Time of 760ns and Nominal Turn On Time of 460ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and THROUGH-HOLE terminals.
APT50GP60J
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;
IRG4RC10UDTRLP
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 8.5 A; Transistor Application: POWER CONTROL; JEDEC-95 Code: TO-252AA;
IKW75N65EL5XKSA1
IKW75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 474ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. The transistor has a RECTANGULAR shape with THROUGH-HOLE terminals for FLANGE MOUNT installation.
STGWA40H65DFB2
STGWA40H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 72A IC, and 230W power dissipation. Ideal for power control applications due to its fast turn-off time of 158ns and built-in diode configuration. Operates b/w -55°C to 175°C temperature range in a rectangular package style.
HGTG11N120CND
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Maximum Fall Time (tf): 400 ns;
IRG4PH50SPBF
IRG4PH50SPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Collector Current of 57A. It has a Nominal Turn Off Time of 2170ns and Nominal Turn On Time of 62ns, making it suitable for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
IXXX160N65B4
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 310 A; Transistor Element Material: SILICON;
IRG7PH35UD-EP
IRG7PH35UD-EP by Infineon Technologies is an N-channel IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It has a power dissipation of 180W and is designed for power control applications. With a rise time of 30ns and fall time of 105ns, it offers efficient switching performance in through-hole package style.
CM600DU-24NFH
Mitsubishi Electric
Mitsubishi Electric's CM600DU-24NFH is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a max VCEsat of 6.5V and IC of 600A, it operates at up to 150°C with a VCE of 1200V. The package style is FLANGE MOUNT with an isolated case connection.
IXXH50N60B3D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Nominal Turn On Time (ton): 75 ns;
IRGR4045DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Transistor Application: POWER CONTROL;
FF1000R17IE4DB2BOSA1
Infineon's FF1000R17IE4DB2BOSA1 IGBT features N-CHANNEL configuration with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.45V and max IC of 1390A. Operates in temp range -40 to 150°C, offering high power dissipation up to 6250W.
CPV364M4FPBF
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 27 A; Nominal Turn Off Time (toff): 410 ns; Qualification: Not Qualified;
IXYF40N450
Littelfuse
Littelfuse IXYF40N450 is an N-CHANNEL IGBT with 4500V VCEsat, 60A IC, and 290W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 1128ns and high operating temperature range from -55°C to 150°C. Package style is IN-LINE with PLASTIC/EPOXY body material.
IKW75N65ES5XKSA1
IKW75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 233ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Features THROUGH-HOLE terminals in a RECTANGULAR package style.
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AFGHL50T65SQDC
AFGHL50T65SQDC by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 100A, and Ptot of 238W. Ideal for power control applications due to its fast turn-off time (toff) of 160.8ns and high operating temperature range (-55 to 175°C).
AFGHL50T65SQD
AFGHL50T65SQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector current (IC) of 80A. It is commonly used for power control applications due to its high power dissipation of 268W and max operating temperature of 175°C.
AFGHL75T65SQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Nominal Turn Off Time (toff): 174 ns;
AFGHL50T65SQ
AFGHL50T65SQ by Onsemi is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC, ideal for POWER CONTROL applications. It has a max power dissipation of 268W, operating temperature range of -55 to 175 °C, and meets AEC-Q101 standard.
AFGHL40T65RQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 288 W; Maximum Collector Current (IC): 46 A; Maximum Gate-Emitter Threshold Voltage: 6.05 V;
AFGHL75T65SQ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Minimum Operating Temperature: -55 Cel;
AFGHL75T65SQDC
AFGHL75T65SQDC by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 196.4ns and a max power dissipation of 375W. Ideal for high-power electronic systems requiring efficient switching capabilities.
AFGHL40T65SPD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 267 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
AFGH50T65SQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 100 A; JEDEC-95 Code: TO-247AB;
AFGHL30T65RQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230.8 W; Maximum Collector Current (IC): 42 A; Maximum Gate-Emitter Threshold Voltage: 6.3 V;
AFGHL40T65SQ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 239 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 39 ns;
AFGHL40T65SQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
AFGHL40T120RLD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 529 W; Maximum Collector Current (IC): 48 A; Nominal Turn On Time (ton): 80 ns;
AFGHL75T65SQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 2.1 V;
AFGHL25T120RLD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 48 A; Terminal Form: THROUGH-HOLE;
AFGHL50T65RQDN
Insulated Gate Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
AFGH40T65SQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; Package Shape: RECTANGULAR;
AFGHL25T120RHD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 261 W; Maximum Collector Current (IC): 48 A; JESD-30 Code: R-PSFM-T3;
AFGHL40T120RL
Insulated Gate Bipolar Transistors;
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