Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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AFGHL40T65SQ by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 239W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range.
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PLASTIC/EPOXY material offers good thermal and mechanical properties, ensuring durability and efficient heat dissipation for the IGBT.
N-CHANNEL IGBTs typically have lower conduction losses and faster switching speeds, making them suitable for high-power applications.
The built-in diode simplifies circuit design and protects against reverse current flow, enhancing the overall performance of the IGBT.
Designed specifically for power control applications, this IGBT provides efficient and reliable performance in regulating power flow.
Low VCEsat value indicates minimal saturation voltage, leading to lower power dissipation and increased efficiency in power switching operations.
Rectangular package shape allows for easy mounting and integration into various electronic systems, enhancing the usability and versatility of the IGBT.
Fast turn-off time ensures quick switching capabilities, reducing power loss and improving overall performance in high-frequency applications.
High power dissipation rating enables the IGBT to handle large power loads without overheating, ensuring reliable operation under heavy-duty conditions.
Flange mount package style provides secure mechanical mounting, facilitating easy installation and enhancing the thermal management of the IGBT.
High maximum operating temperature tolerance allows the IGBT to withstand elevated heat levels, ensuring consistent performance in demanding environments.
High collector-emitter voltage rating enables the IGBT to handle high voltage levels, making it suitable for power control applications with varying voltage requirements.
Silicon-based transistor element offers reliable and consistent performance, ensuring stable operation and longevity in diverse power control applications.
High gate-emitter voltage rating provides robust protection against voltage spikes and overvoltage conditions, enhancing the durability and reliability of the IGBT.
Low minimum operating temperature tolerance allows the IGBT to function effectively in cold environments or during start-up conditions, ensuring reliable operation in harsh climates.
High collector current rating allows the IGBT to handle significant current flows, making it suitable for high-power applications requiring efficient current regulation.
Optimal gate-emitter threshold voltage ensures precise control over the switching behavior of the IGBT, leading to stable and efficient power regulation.
Matte Tin finish provides corrosion resistance and reliable electrical contact, ensuring smooth operation and longevity of the IGBT in various operating conditions.
Single terminal position simplifies installation and connectivity, reducing complexity in circuit design and enhancing the overall usability of the IGBT.
Fast turn-on time enables quick start-up and switching speeds, improving the overall performance and efficiency of the IGBT in power control applications.
Compliance with AEC-Q101 standard ensures high-quality and reliable performance, making this IGBT suitable for automotive and industrial applications where robustness is essential.
Insulated Gate Bipolar Transistors (IGBT) AFGHL40T65SQ attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
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Nominal Turn Off Time (toff):
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AFGHL40T65SQ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Wafer Fab 09/May/2023
PCN Packaging - Packing quantity increase 25/Jun/2021
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N7002
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
M39029/58-360
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
LM317BD2TG
Onsemi
LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.
BAV99WT1G
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
1N4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMMBT3904LT1G
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
Rectron
Telcom Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
LAN8720AI-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
BAV99
Changzhou Galaxy Century Microelectronics
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
SMBJ18CA
Multicomp Pro
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
BSS138
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
Dc Components
U.FL-R-SMT-1(10)
Hirose Electric
U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MICRODIODE ELECTRONICS SHENZHEN CO LTD
SKM145GB066D
Semikron International
Semikron International's SKM145GB066D is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle up to 195A of Collector Current. Ideal for POWER CONTROL applications, this IGBT operates at a max temperature of 175°C with a fast Turn Off Time of 536ns.
IGW50N60TFKSA1
Infineon Technologies
IGW50N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals in a rectangular shape.
IRG4PC40UDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; Nominal Turn On Time (ton): 92 ns;
FS150R12KT4P_B11
Infineon FS150R12KT4P_B11 IGBT, N-Channel type, with VCEsat of 2.1V and Pmax of 750W. Ideal for high-power applications requiring fast switching such as motor drives and renewable energy systems due to its low turn-off time of 605ns. Operating temperature range from -40°C to 150°C ensures reliability in various environments.
APT100GN60LDQ4G
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Package Shape: RECTANGULAR;
IHW30N160R2FKSA1
IHW30N160R2FKSA1 by Infineon is an N-CHANNEL IGBT with 1600V VCE, 60A IC, and 675ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 175°C, it has a FLANGE MOUNT style for COLLECTOR connection.
IRGP4650D-EPBF
IRGP4650D-EPBF by Infineon Technologies is an N-CHANNEL IGBT with 42ns rise time, 54ns fall time, and 268W power dissipation. It operates at a max temp of 175°C and has a collector-emitter voltage of 600V. Ideal for high-power applications requiring fast switching capabilities.
FP20R06W1E3B11BOMA1
Infineon Technologies' FP20R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 600V VCE, 27A IC, and 250ns toff. Ideal for power control applications due to its complex configuration and UL approval.
IRGP4640DPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 65 A; Maximum Fall Time (tf): 41 ns; Maximum Operating Temperature: 175 Cel;
FF200R12KE4PHOSA1
FF200R12KE4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 800ns, making it ideal for POWER CONTROL applications. The transistor is UL APPROVED and operates in temperatures as low as -40°C.
IRG4PSH71KDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 78 A; Maximum Operating Temperature: 150 Cel;
IRG7PH42UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 85 A; Qualification: Not Qualified;
IXGH32N170A
Littelfuse
IXGH32N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 32A max collector current, and 370ns nominal turn-off time. Ideal for motor control applications due to its single configuration and flange mount package style.
STGF14NC60KD
STMicroelectronics
STGF14NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 11A max collector current, and 25W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.
IXXX300N60C3
IXXX300N60C3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 510A IC, and 2300W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 278ns and operates b/w -55 to 175 °C temperatures.
HGTG30N60C3D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Transistor Element Material: SILICON;
CM600DU-12NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
BSM150GT120DN2
Infineon's BSM150GT120DN2 IGBT offers 1200V VCE, 200A IC, and 1250W power dissipation. Ideal for high-power applications requiring low VCEsat of 3V. Operates up to 150°C making it suitable for industrial and automotive sectors.
FS215R04A1E3DBOMA1
Infineon's FS215R04A1E3DBOMA1 is an N-Channel IGBT with VCEsat of 1.7V, toff of 340ns, and Pmax of 715W. Ideal for high-power applications requiring a max VCE of 400V, such as motor drives and renewable energy systems. Operating temperatures range from -40°C to 150°C.
IRG4PH50UDPBF
IRG4PH50UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a collector current of 45A. It has a nominal turn-off time of 570ns and turn-on time of 73ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals and built-in diode, suitable for flange mount installations.
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AFGHL50T65SQDC
AFGHL50T65SQDC by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 100A, and Ptot of 238W. Ideal for power control applications due to its fast turn-off time (toff) of 160.8ns and high operating temperature range (-55 to 175°C).
AFGHL50T65SQD
AFGHL50T65SQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector current (IC) of 80A. It is commonly used for power control applications due to its high power dissipation of 268W and max operating temperature of 175°C.
AFGHL75T65SQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Nominal Turn Off Time (toff): 174 ns;
AFGHL50T65SQ
AFGHL50T65SQ by Onsemi is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC, ideal for POWER CONTROL applications. It has a max power dissipation of 268W, operating temperature range of -55 to 175 °C, and meets AEC-Q101 standard.
AFGHL40T65RQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 288 W; Maximum Collector Current (IC): 46 A; Maximum Gate-Emitter Threshold Voltage: 6.05 V;
AFGHL75T65SQ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Minimum Operating Temperature: -55 Cel;
AFGHL75T65SQDC
AFGHL75T65SQDC by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 196.4ns and a max power dissipation of 375W. Ideal for high-power electronic systems requiring efficient switching capabilities.
AFGHL40T65SPD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 267 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
AFGH50T65SQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 100 A; JEDEC-95 Code: TO-247AB;
AFGHL30T65RQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230.8 W; Maximum Collector Current (IC): 42 A; Maximum Gate-Emitter Threshold Voltage: 6.3 V;
AFGHL40T65SQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
AFGHL40T120RLD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 529 W; Maximum Collector Current (IC): 48 A; Nominal Turn On Time (ton): 80 ns;
AFGHL75T65SQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 2.1 V;
AFGHL25T120RLD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 48 A; Terminal Form: THROUGH-HOLE;
AFGHL40T120RHD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 48 A; Nominal Turn Off Time (toff): 230 ns;
AFGHL50T65RQDN
Insulated Gate Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
AFGH40T65SQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; Package Shape: RECTANGULAR;
AFGHL25T120RHD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 261 W; Maximum Collector Current (IC): 48 A; JESD-30 Code: R-PSFM-T3;
AFGHL40T120RL
Insulated Gate Bipolar Transistors;
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