Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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AFGHL50T65SQ by Onsemi is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC, ideal for POWER CONTROL applications. It has a max power dissipation of 268W, operating temperature range of -55 to 175 °C, and meets AEC-Q101 standard.
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Provides good insulation and protection for the internal components, making it durable and reliable.
Allows for efficient power control in N-channel configurations, improving overall performance.
Simplifies installation and operation, making it suitable for a wide range of applications.
Low VCEsat results in reduced power loss and improved efficiency, making it an energy-efficient choice.
Offers a compact design that is easy to integrate into various systems.
Provides a secure and reliable connection, ensuring stable operation.
Simplifies the wiring process and reduces the chances of errors during installation.
Capable of handling high power levels, making it suitable for demanding applications.
Allows for easy mounting and heat dissipation, enhancing the overall performance.
Can withstand high temperatures, ensuring stable operation in challenging environments.
Provides a wide voltage range for various power control applications.
Delivers reliable performance and longevity, ensuring the product's durability.
Provides effective gate control for precise power management.
Can operate in extreme cold conditions, expanding its usability in different environments.
Capable of handling high currents, making it suitable for power-intensive applications.
Offers precise gate control for optimal power regulation.
Provides a durable and corrosion-resistant finish for long-term reliability.
Simplifies the connection process, ensuring a hassle-free installation.
Facilitates efficient current flow, improving overall performance.
Meets automotive industry standards, ensuring high quality and reliability for automotive applications.
Insulated Gate Bipolar Transistors (IGBT) AFGHL50T65SQ attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Maximum VCEsat:
AFGHL50T65SQ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Wafer Fab 09/May/2023
PCN Packaging - Packing quantity increase 25/Jun/2021
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
LD1117S33CTR
STMicroelectronics
STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.
BAV99
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2931Z-5.0RPG
Onsemi
LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.
SMBJ18CA
Fagor Electronica S Coop
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Weitron Technology
National Semiconductor
1N4148W-7-F
Diodes Incorporated
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
SS14
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
TDK
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;
Hi-tron Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
STM32F405RGT6
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Semtech
Dc Components
Rectron
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FGH60N60UFDTU
FGH60N60UFDTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 120A. It has a nominal turn-off time of 204ns, making it ideal for power control applications requiring high-speed switching capabilities. The transistor's package style is flange mount with through-hole terminals, suitable for applications where efficient heat dissipation is crucial.
IRG7PH42UD2-EP
Infineon Technologies
IRG7PH42UD2-EP by Infineon Technologies is an N-channel IGBT with a max collector-emitter voltage of 1200V and a collector current of 60A. It has a nominal turn-off time of 470ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and a built-in diode for efficient performance.
HGTG18N120BND
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
IKY40N120CS6XKSA1
IKY40N120CS6XKSA1 by Infineon: N-Channel IGBT with VCEsat of 2.15V, IC of 80A, and Pdiss of 500W. Ideal for high-power applications like motor drives and renewable energy systems due to its high voltage rating and fast switching times.
ISL9V3040P3
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Shape: RECTANGULAR;
APT35GT120JU2
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Additional Features: LOW CONDUCTION LOSS; Case Connection: ISOLATED;
6PS04512E43G37986NOSA1
Infineon's 6PS04512E43G37986NOSA1 is an N-CHANNEL IGBT with 6 elements, max voltage of 1200V, and operating temp of 150°C. Ideal for power control applications due to its silicon material and isolated case connection in a rectangular package style.
IRGP50B60PDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Maximum Collector Current (IC): 75 A; Maximum Fall Time (tf): 65 ns;
GT40WR21,Q(O
Toshiba
Toshiba's GT40WR21,Q(O is an N-CHANNEL IGBT with 350 ns fall time, 375 W power dissipation, and 1800 V collector-emitter voltage. Ideal for high-power applications requiring up to 40 A collector current, it operates at a max temperature of 175°C.
FGH40T120SMD_F155
FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.
HGT1S10N120BNST
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; JESD-609 Code: e3;
IKQ75N120CT2XKSA1
IKQ75N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.15V and IC of 150A. Ideal for POWER CONTROL applications, it has a max VCE of 1200V and can operate b/w -40 to 175 °C.
FS150R12KT3BOSA1
Infineon FS150R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current rating of 200A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
AUIRGB4062D1
Infineon's AUIRGB4062D1 is an N-CHANNEL IGBT with tr of 41ns and tf of 40ns. It boasts a max power dissipation of 246W, ideal for high-power applications like motor drives and inverters. With a VCE of 600V and IC of 59A, it ensures efficient performance even at elevated temperatures up to 175°C.
HGTD1N120BNS9A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5.3 A; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
IRG4PH40UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 41 A; Terminal Finish: MATTE TIN OVER NICKEL;
STGW30NC60WD
STGW30NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and a turn-off time of 189ns. The package style is flange mount with through-hole terminals.
IRG4BC30W-SPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V;
IKW30N65EL5XKSA1
IKW30N65EL5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 650V and Max Collector Current of 85A. It has a Nominal Turn Off Time of 520ns and Nominal Turn On Time of 44ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, suitable for FLANGE MOUNT installation.
IXXX300N60B3
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 550 A; Maximum Collector-Emitter Voltage: 600 V;
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AFGHL50T65SQDC
AFGHL50T65SQDC by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 100A, and Ptot of 238W. Ideal for power control applications due to its fast turn-off time (toff) of 160.8ns and high operating temperature range (-55 to 175°C).
AFGHL50T65SQD
AFGHL50T65SQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector current (IC) of 80A. It is commonly used for power control applications due to its high power dissipation of 268W and max operating temperature of 175°C.
AFGHL75T65SQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Nominal Turn Off Time (toff): 174 ns;
AFGHL40T65RQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 288 W; Maximum Collector Current (IC): 46 A; Maximum Gate-Emitter Threshold Voltage: 6.05 V;
AFGHL75T65SQ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Minimum Operating Temperature: -55 Cel;
AFGHL75T65SQDC
AFGHL75T65SQDC by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 196.4ns and a max power dissipation of 375W. Ideal for high-power electronic systems requiring efficient switching capabilities.
AFGHL40T65SPD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 267 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
AFGH50T65SQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 100 A; JEDEC-95 Code: TO-247AB;
AFGHL30T65RQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230.8 W; Maximum Collector Current (IC): 42 A; Maximum Gate-Emitter Threshold Voltage: 6.3 V;
AFGHL40T65SQ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 239 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 39 ns;
AFGHL40T65SQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
AFGHL40T120RLD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 529 W; Maximum Collector Current (IC): 48 A; Nominal Turn On Time (ton): 80 ns;
AFGHL75T65SQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 2.1 V;
AFGHL25T120RLD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 48 A; Terminal Form: THROUGH-HOLE;
AFGHL40T120RHD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 48 A; Nominal Turn Off Time (toff): 230 ns;
AFGHL50T65RQDN
Insulated Gate Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
AFGH40T65SQDN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; Package Shape: RECTANGULAR;
AFGHL25T120RHD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 261 W; Maximum Collector Current (IC): 48 A; JESD-30 Code: R-PSFM-T3;
AFGHL40T120RL
Insulated Gate Bipolar Transistors;
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