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NGD8201NT4

Onsemi

NGD8201NT4 by Onsemi

NGD8201NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 115W. This surface-mount transistor operates at up to 175 °C with rise time of 14000ns and fall time of 7000ns.

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Italy . 979 parts In-Stock

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USA . 451 parts In-Stock

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Kepictronics

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SupplyDigital Components

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Overview

Enhance your automotive ignition systems with the NGD8201NT4 Insulated Gate Bipolar Transistor by Onsemi. Known for their quality and reliability, Onsemi delivers top-notch products that meet industry standards. This N-channel transistor comes in a compact package with a built-in diode and resistor, making it perfect for a variety of applications. With fast rise and fall times, high power dissipation, and a wide operating temperature range, this transistor offers exceptional performance and durability. Upgrade your automotive electronics with the NGD8201NT4 and experience the superior value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Provides good insulation for the transistor, helping to prevent electrical leakage and short circuits.

Polarity or Channel Type - N-CHANNEL

Offers efficient power handling capabilities for automotive ignition applications.

Configuration - SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies the design and operation of the transistor, making it convenient for automotive ignition systems.

Transistor Application - AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring reliable performance in this application.

Maximum Power Dissipation (Abs) - 115 W

Can handle high power levels, making it suitable for demanding automotive ignition tasks.

Maximum Operating Temperature - 175 °C

Capable of operating at high temperatures common in automotive environments.

Maximum Collector-Emitter Voltage - 440 V

Provides high voltage handling capabilities, suitable for automotive ignition systems.

Maximum Collector Current (IC) - 20 A

Capable of handling high current levels, necessary for automotive ignition applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGD8201NT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

440 V

Maximum Fall Time (tf):

7000 ns

Maximum Gate-Emitter Threshold Voltage:

2.3 V

Maximum Gate-Emitter Voltage:

15 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

14000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

18500 ns

Nominal Turn On Time (ton):

6500 ns

Trade Compliance

NGD8201NT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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