Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NGTB25N120FL3WG
Onsemi
NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.
50 A
1200 V
SINGLE WITH BUILT-IN DIODE
6.5 V
20 V
TO-247
R-PSFM-T3
e3
1
3
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
349 W
NO
MATTE TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
282 ns
36 ns
1.95 V
NGTB75N65FL2WAG
NGTB75N65FL2WAG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat and 200A IC, ideal for POWER CONTROL applications. Featuring a 78ns turn on time and 262ns turn off time, this transistor has a max power dissipation of 536W. Its package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
200 A
650 V
R-PSFM-T4
4
536 W
TIN
262 ns
78 ns
2 V
NGTB40N120FL2WAG
NGTB40N120FL2WAG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 536W power dissipation. Ideal for power control applications, it features a built-in diode, 360ns turn-off time, and -55 to 175 °C operating temperature range.
160 A
360 ns
65 ns
2.4 V
NGTB50N65S1WG
The Onsemi NGTB50N65S1WG is an N-CHANNEL IGBT with a max VCEsat of 2.45V and IC of 140A. Ideal for POWER CONTROL applications, it has a turn-off time of 228ns and can operate at temperatures ranging from -55 to 175 °C.
140 A
TO-247AD
300 W
Tin (Sn)
228 ns
118 ns
2.45 V
NGTD14T65F2SWK
NGTD14T65F2SWK by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material.
S-XUUC-N3
UNSPECIFIED
SQUARE
UNCASED CHIP
NOT SPECIFIED
YES
NO LEAD
UPPER
NGTD14T65F2WP
NGTD14T65F2WP by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2V and max collector-emitter voltage of 650V. It is designed for power control applications, operates b/w -55 to 175 °C, and has a gate-emitter threshold voltage of 6.5V.
NGTD17T65F2SWK
NGTD17T65F2SWK by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material. Suitable for surface mount with a rectangular package style.
R-XUUC-N3
NGTD17T65F2WP
NGTD17T65F2WP by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material. Suitable for surface mount with a rectangular package style.
NGTD20T120F2SWK
The Onsemi NGTD20T120F2SWK is an N-CHANNEL IGBT transistor with a max VCEsat of 2.4V and a max collector-emitter voltage of 1200V. Ideal for power control applications, it operates b/w -55 °C to 175°C, making it suitable for high-temperature environments. This single configuration transistor has a surface-mount package style and gate-emitter threshold voltage of 6.5V.
R-XUUC-N2
2
NGTD20T120F2WP
NGTD20T120F2WP by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material.
NGTD21T65F2SWK
NGTD21T65F2SWK by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 1.9V, and 20V max gate-emitter voltage. Ideal for power control applications due to its single configuration and operating temperature range of -55 °C to 175°C. Suitable for surface mount installations with a square package shape.
1.9 V
NGTD21T65F2WP
NGTD21T65F2WP by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 1.9V, Max VGE of 20V, and Max VCE of 650V. With a temperature range from -55 °C to 175°C, it's suitable for high-power electronic systems requiring efficient power switching.
NGTD23T120F2SWK
NGTD23T120F2SWK by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.2V, Max VGE of 20V, and Max VCE of 1200V. With a temperature range from -55 °C to 175°C, it's suitable for high-power electronic systems requiring efficient power management.
2.2 V
NGTD23T120F2WP
NGTD23T120F2WP by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material. Suitable for surface mount with rectangular package style.
NGTD28T65F2WP
NGTD28T65F2WP by Onsemi is an N-CHANNEL IGBT for MOTOR CONTROL applications. It features a Max VCEsat of 2V, Max VGE of 20V, and Max VCE of 650V. With a temperature range from -55 °C to 175°C, this surface-mount transistor is ideal for high-power motor control systems.
MOTOR CONTROL
NGTB40N120S3WG
NGTB40N120S3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 1.95V VCEsat. Ideal for POWER CONTROL applications due to its high power dissipation of 454W and operating temperature range of -55 to 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
454 W
Matte Tin (Sn) - annealed
FGD2736G3-F085
Onsemi's FGD2736G3-F085 is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.65V, collector current of 21A, and can operate in temperatures ranging from -40 to 175 °C. This surface-mount transistor features a rectangular package shape with gull wing terminals.
COLLECTOR
21 A
360 V
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
15000 ns
10 V
TO-252AA
R-PSSO-G2
-40 Cel
SMALL OUTLINE
260
150 W
7000 ns
GULL WING
30
AUTOMOTIVE IGNITION
30000 ns
6300 ns
11000 ns
3900 ns
1.65 V
FGH75T65SQDTL4
FGH75T65SQDTL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 150A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175 °C and turn-off time of 352ns, making it suitable for high-power systems.
RC-IGBT
150 A
6.4 V
375 W
352 ns
80 ns
2.1 V
FPF1C2P5MF07AM
FPF1C2P5MF07AM by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 1.6V, it has a Max Collector-Emitter Voltage of 620V and can handle up to 39A of Max Collector Current (IC). Ideal for high-power systems requiring efficient power management.
39 A
620 V
COMPLEX
7 V
R-XUFM-X24
24
150 Cel
231 W
UL APPROVED
1.6 V
FPF2C110BI07AS2
Onsemi's FPF2C110BI07AS2 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Nominal Turn Off Time of 152ns, and Max Collector-Emitter Voltage of 650V. This COMPLEX transistor with 6 elements operates b/w -40 to 150 °C and has a Max Power Dissipation of 158W in a RECTANGULAR package style.
ISOLATED
40 A
6.1 V
R-XUFM-X30
6
158 W
152 ns
49 ns
2.3 V
FGH40T65SQD_F155
FGH40T65SQD_F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 80A. It is used for POWER CONTROL applications, featuring a max VCE of 650V and operating temperature range from -55 to 175 °C.
80 A
238 W
NXH80T120L2Q0S2G
NXH80T120L2Q0S2G by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 67A IC, and 158W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 293ns and high operating temperature range (-40 to 150 °C).
67 A
R-XUFM-X20
20
293 ns
88 ns
2.85 V
FGY100T65SCDT
FGY100T65SCDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 200A. Ideal for GENERAL PURPOSE SWITCHING applications, it has a max operating temperature of 175 °C and a nominal turn off time of 410ns.
FAST SWITCHING
6.9 V
25 V
750 W
GENERAL PURPOSE SWITCHING
410 ns
240 ns
FGH40T100SMD-F155
FGH40T100SMD-F155 by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 80A IC, and 333W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
1000 V
30 ns
TO-247AB
333 W
64 ns
397 ns
305 ns
100 ns
76 ns
NGTB40N65IHRTG
NGTB40N65IHRTG by Onsemi is an N-CHANNEL IGBT with VCEsat of 1.7V, IC of 80A, and toff of 316ns. Ideal for POWER CONTROL applications due to its high power dissipation of 405W and max VCE of 650V. The package style is FLANGE MOUNT with a COLLECTOR case connection.
LOW CONDUCTION LOSS
405 W
316 ns
1.7 V
NXH160T120L2Q2F2SG
NXH160T120L2Q2F2SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 181A IC, and 500W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 435ns and high operating temperature range from -40°C to 125°C. The COMPLEX configuration and RECTANGULAR package shape make it suitable for various industrial uses.
181 A
R-XUFM-X56
56
125 Cel
500 W
435 ns
150 ns
2.7 V
NGTB40N65IHRWG
NGTB40N65IHRWG by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.7V and a max IC of 80A, ideal for power control applications. It has a package style of FLANGE MOUNT, can handle up to 650V and dissipate 405W, making it suitable for high-power operations in various industries.
NXH80T120L2Q0P2G
NXH80T120L2Q0P2G by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 67A IC, and 158W power dissipation. Ideal for POWER CONTROL applications due to its low 2.85V VCEsat and fast switching times of 88ns turn on and 293ns turn off. Suitable for high-power systems requiring efficient control in a complex configuration.
NXH80T120L2Q0S2TG
NXH80T120L2Q0S2TG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 67A IC, and 158W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 88ns and low toff of 293ns. Package style is FLANGE MOUNT with RECTANGULAR shape and ISOLATED case connection.
NXH160T120L2Q2F2S1G
NXH160T120L2Q2F2S1G by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 181A IC, and 500W power dissipation. Ideal for power control applications due to its fast turn-off time of 435ns and high operating temperature range from -40 °C to 125°C.
PCFG40T65SQF
PCFG40T65SQF by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.1V, Max VGE of 20V, and Max VCE of 650V. With a temperature range from -40 to 175 °C, this SQUARE-shaped chip is ideal for high-power electronic systems requiring efficient power management.
S-XUUC-N2
FGHL50T65SQ
The Onsemi FGHL50T65SQ is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 100A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature range from -55 to 175°C, and comes in a RECTANGULAR package style for FLANGE MOUNT installation.
100 A
268 W
FGY60T120SQDN
FGY60T120SQDN by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 120A IC, and 517W power dissipation. Ideal for general purpose switching applications due to its fast turn-off time of 468ns. The package style is flange mount with a rectangular shape and through-hole terminals.
HIGH SPEED SWITCHING
120 A
517 W
468 ns
112 ns
FGY75T120SQDN
FGY75T120SQDN by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 790W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C.
790 W
452 ns
136 ns
PCFG75T65MQF
PCFG75T65MQF by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 1.9V, it operates at -55 to 175 °C and handles up to 650V/150A. This surface-mount chip has a gate-emitter voltage of 20V and gate-emitter threshold voltage of 6.4V, making it suitable for high-power systems.
R-XUUC-N
NXH35C120L2C2SG
NXH35C120L2C2SG by Onsemi is an N-CHANNEL IGBT with 7 elements, including a brake IGBT and three-phase diode bridge. It has a max VCEsat of 2.4V and can handle up to 35A collector current. Ideal for power control applications, this IGBT operates b/w -40°C to 150°C temperature range.
35 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR
6.8 V
R-PDIP-T26
7
26
IN-LINE
DUAL
485 ns
NXH80T120L3Q0S3G
NXH80T120L3Q0S3G by Onsemi is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max VCEsat of 2.4V and can handle up to 75A of collector current. Ideal for power control applications, it operates at temperatures ranging from -40 °C to 150°C.
75 A
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
188 W
750 ns
98 ns
NXH25T120L2Q1PG
NXH25T120L2Q1PG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 25A IC, and 77ns ton. Ideal for POWER CONTROL applications, it has a max power dissipation of 81W and operates b/w -40 to 150 °C.
25 A
R-XUFM-X44
12
44
81 W
551 ns
77 ns
2.5 V
NXH25T120L2Q1PTG
NXH25T120L2Q1PTG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 25A IC, and 81W power dissipation. Ideal for power control applications, it features a turn-off time of 551ns and operates b/w -40 to 150 °C.
NXH240B120H3Q1PG
NXH240B120H3Q1PG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 68A IC, and 158W power dissipation. Ideal for motor control applications due to its fast turn-off time of 337ns. Package style is flange mount with 32 terminals and isolated case connection.
68 A
R-XUFM-X32
32
337 ns
54 ns
FGD3440G2-F085V
Onsemi's FGD3440G2-F085V is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.75V, rise time of 7ns, and power dissipation of 166W. With a max operating temperature of 175 °C, it offers reliable performance in harsh environments.
26.9 A
40 V
15 ns
14 V
TO-252
166 W
7 ns
26 ns
7.6 ns
11 ns
3 ns
1.75 V
FGHL40S65UQ
FGHL40S65UQ by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 1.7V VGE. Ideal for general purpose switching applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
340 ns
58 ns
NXH100B120H3Q0PG
N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 186 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X22
22
186 W
291 ns
61 ns
FGAF30S65AQ
FGAF30S65AQ by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a collector-emitter voltage of 650V. Ideal for switching applications, it has a turn-off time of 166ns and can handle a max collector current of 60A.
60 A
6.6 V
83 W
SWITCHING
166 ns
FGHL40T65MQD
FGHL40T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power amplifier applications, featuring a single configuration with built-in diode. With a max power dissipation of 238W and operating temperature up to 175°C, it offers reliable performance in various high-power electronic systems.
6 V
POWER AMPLIFIER
203 ns
52 ns
1.8 V
FGHL50T65MQD
FGHL50T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a max operating temperature of 175 °C and a max collector current of 80A.
FGHL75T65MQD
FGHL75T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a nominal turn off time of 280ns and a max operating temperature of 175°C.
280 ns
92 ns
NVG800A75L4DSC
NVG800A75L4DSC by Onsemi is an N-CHANNEL IGBT with 750V VCE, 800A IC, and 1.55V VCEsat. Ideal for power control applications, it features a series connected configuration with built-in diode and operates b/w -40 to 175°C.
800 A
750 V
SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
6.2 V
R-XXMA-X15
15
MICROELECTRONIC ASSEMBLY
855 ns
347 ns
1.55 V
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