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FGH75T65SQDTL4

Onsemi

FGH75T65SQDTL4 by Onsemi

FGH75T65SQDTL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 150A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175 °C and turn-off time of 352ns, making it suitable for high-power systems.

Median Price

$5.762

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 385 parts In-Stock

1+ parts

$7.550

100+ parts

$3.670

1k+ parts

$3.640

10k+ parts

-

385

$7.550

$3.670

$3.640

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DigiKey

USA . 278 parts In-Stock

1+ parts

$7.560

100+ parts

$4.371

1k+ parts

$3.183

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278

$7.560

$4.371

$3.183

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Rochester

USA . 9,343 parts In-Stock

1+ parts

-

100+ parts

$3.180

1k+ parts

$2.850

10k+ parts

$2.680

9,343

-

$3.180

$2.850

$2.680

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$3.975

1k+ parts

$3.563

10k+ parts

$3.350

9,000

-

$3.975

$3.563

$3.350

Flip Electronics (Authorized)

USA . 450 parts In-Stock

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450

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Distributors (In-Stock)

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Digiode

USA . 1,843 parts In-Stock

1+ parts

$3.363

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1,843

$3.363

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Bristol Electronics

USA . 360 parts In-Stock

1+ parts

$5.663

100+ parts

$2.454

1k+ parts

$2.322

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360

$5.663

$2.454

$2.322

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Chip Stock

USA . 19,400 parts In-Stock

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Vyrian

USA . 5,141 parts In-Stock

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5,141

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Cyclops Electronics Ltd

UK . 894 parts In-Stock

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Flip Electronics

USA . 450 parts In-Stock

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450

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ACDS - Activité Composants Distribution Service

France . 360 parts In-Stock

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360

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Dan-Mar Components

USA . 360 parts In-Stock

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360

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Distributors (Availability)

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Corphita

USA . 699 parts In-Stock

1+ parts

$3.186

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699

$3.186

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Corohmni

South Africa . 83 parts In-Stock

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$3.710

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$3.710

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Perfect Parts

USA . 171,700 parts In-Stock

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Kepictronics

USA . 49,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,667 parts In-Stock

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Kulean Microsystems

USA . 4,258 parts In-Stock

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Infinite Electronics LLP (Excess)

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Assy Fe

Spain . 2,995 parts In-Stock

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SupplyDigital Components

Austria . 1,964 parts In-Stock

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Problanco Electronics

Mexico . 1,754 parts In-Stock

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Northwest PG Solutions

USA . 1,368 parts In-Stock

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TANS Electronics

Latvia . 856 parts In-Stock

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UHIMA Technologies

Türkiye . 768 parts In-Stock

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iodParts Technologies Inc.

India . 426 parts In-Stock

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Native Components

USA . 244 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Unleash the power of the FGH75T65SQDTL4 by Onsemi, a top-quality Insulated Gate Bipolar Transistor designed for maximum efficiency in power control applications. Manufactured by Onsemi, known for their superior technology and reliability, this N-CHANNEL transistor with built-in diode offers exceptional performance and durability. With a maximum collector-emitter voltage of 650V and a maximum power dissipation of 375W, this transistor ensures optimal functionality even in high-demand situations. Upgrade your power control systems with the FGH75T65SQDTL4 and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and low on-state voltage drop, making the product suitable for high power applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and efficiency in power management.

Maximum Collector-Emitter Voltage: 650 V

Can handle high voltages, making it suitable for applications where high power levels are required.

Maximum Gate-Emitter Voltage: 20 V

Allows for precise and reliable control of the transistor, enhancing overall performance and efficiency.

Maximum Collector Current (IC): 150 A

Capable of handling high current levels, making it suitable for power applications that require high current handling capacity.

Nominal Turn On Time (ton): 80 ns

Fast turn on time allows for quick response and efficient power control, improving overall performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGH75T65SQDTL4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

RC-IGBT

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

352 ns

Nominal Turn On Time (ton):

80 ns

Maximum VCEsat:

2.1 V

Trade Compliance

FGH75T65SQDTL4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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