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NGTD23T120F2WP

Onsemi

NGTD23T120F2WP by Onsemi

NGTD23T120F2WP by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material. Suitable for surface mount with rectangular package style.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,421 parts In-Stock

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Digiode

USA . 638 parts In-Stock

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AZTECH Wire

Italy . 213 parts In-Stock

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$16.280

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Microchip USA

USA . 2,377 parts In-Stock

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$20.484

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SupplyDigital Components

Austria . 8,101 parts In-Stock

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Kulean Microsystems

USA . 6,459 parts In-Stock

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TANS Electronics

Latvia . 4,745 parts In-Stock

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Problanco Electronics

Mexico . 1,791 parts In-Stock

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Corphita

USA . 911 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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UHIMA Technologies

Türkiye . 159 parts In-Stock

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Overview

Unlock the power of innovation with the NGTD23T120F2WP by Onsemi. As a leader in the industry, Onsemi delivers top-quality Insulated Gate Bipolar Transistors that are perfect for power control applications. This N-CHANNEL transistor offers unmatched performance and reliability, with a maximum collector-emitter voltage of 1200 V and a low VCEsat of 2.2 V. Its single configuration and surface mount design make it easy to integrate into any project. Experience the benefits of superior technology and efficiency with the NGTD23T120F2WP, setting new standards in power management solutions.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower conduction losses and higher efficiency compared to P-CHANNEL types, making them a good choice for power control applications.

Configuration: SINGLE

Single configuration IGBTs are easier to control and operate, making them suitable for applications requiring individual power control.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for handling high power loads efficiently.

Maximum VCEsat: 2.2 V

With a low VCEsat value, this IGBT offers reduced power dissipation and improved efficiency in power control circuits.

Maximum Collector-Emitter Voltage: 1200 V

With a high maximum VCE voltage rating, this IGBT can handle high voltage power control applications with ease.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGTD23T120F2WP attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUUC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.2 V

Trade Compliance

NGTD23T120F2WP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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