Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NGTD13T120F2SWK by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.4V, Max VGE of 20V, and Max VCE of 1200V. With a temperature range from -55 °C to 175°C, it's suitable for high-power electronic systems requiring efficient power management.
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UHIMA Technologies
N-CHANNEL IGBTs are generally more efficient and have lower conduction losses compared to P-CHANNEL IGBTs.
Single configuration IGBTs are easier to manage in circuit design and provide reliable performance.
Designed specifically for power control applications, ensuring optimal performance and efficiency.
Low VCEsat reduces power dissipation and improves efficiency in power switching applications.
Rectangular package shape allows for easy mounting and compact design in circuit layouts.
Having only 2 terminals simplifies the connection process and reduces chances of error in installation.
Can operate efficiently at high temperatures, making it suitable for industrial applications.
Supports high voltage applications, providing versatility in power control circuits.
Silicon-based transistor elements offer high performance, reliability, and have a wide operating temperature range.
Suitable for driving the gate of the IGBT efficiently, ensuring precise control over power switching.
Capable of operating in extreme cold temperatures, suitable for a wide range of environmental conditions.
Provides a safe threshold for gate triggering, preventing accidental activation and ensuring stable operation.
The upper terminal position makes it easy for integration into circuit layouts and connections.
Insulated Gate Bipolar Transistors (IGBT) NGTD13T120F2SWK attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Gate-Emitter Threshold Voltage:
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JESD-30 Code:
No. of Elements:
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Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
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NGTD13T120F2SWK Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148
Nte Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS14
Rugao Dachang Electronic
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
LM358N
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
Silicon Group
1N4148WT
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
KSZ9031RNXIC
Microchip Technology
KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.
LL4148
Itt Components
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .005 us; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Non Repetitive Peak Forward Current: 1 A;
1N4148WS
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Analog Devices
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;
SBAV99LT1G
Onsemi
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
Weitronic Enterprise
FZ600R12KS4HOSA1
Infineon Technologies
FZ600R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and a Nominal Turn Off Time of 590ns. It features a SINGLE configuration with BUILT-IN DIODE, suitable for high-power applications like industrial motor drives and renewable energy systems.
IRGB4061DPBF
IRGB4061DPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a power dissipation of 206W and is ideal for power control applications due to its single configuration with built-in diode. With fast rise and fall times of 35ns, it offers efficient switching performance in various industrial settings.
FGH30S130P
FGH30S130P by Onsemi is an N-CHANNEL IGBT with 1300V VCE, 60A IC, and 500W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 175°C. With a fast tf of 210ns and toff of 905ns, this IGBT offers efficient switching performance in a rectangular package with through-hole terminals.
IKW15T120FKSA1
IKW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 30A. It has a turn-off time of 720ns and turn-on time of 85ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 150°C.
BSM150GT120DN2
Siemens
N-CHANNEL; Configuration: 3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Turn Off Time (toff): 900 ns;
APT45GP120J
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;
NGTB15N120LWG
NGTB15N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 229W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 435ns.
HGTG20N60A4D
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Maximum Fall Time (tf): 73 ns;
IXXX100N60C3H1
Littelfuse
The Littelfuse IXXX100N60C3H1 is an N-CHANNEL IGBT with a max VCEsat of 2.2V and IC of 170A, ideal for POWER CONTROL applications. It has a package style of IN-LINE, operating temperature range from -55 to 150 °C, and a turn-off time of 220ns.
APT150GN60JDQ4
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 536 W; Maximum Collector Current (IC): 220 A; Terminal Form: UNSPECIFIED;
IXGN200N170
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 280 A; No. of Terminals: 4;
FGH60N60SFDTU
FGH60N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 120A max collector current. It has a single configuration with built-in diode, ideal for power control applications. With a max power dissipation of 378W and operating temperature of 150°C, it offers fast switching times of 62ns fall time and 66ns turn on time.
FF1000R17IE4BOSA1
FF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max Collector-Emitter Voltage of 1700V and a Nominal Turn Off Time of 1890ns, making it ideal for POWER CONTROL applications. The transistor features a Max Collector Current of 1390A and operates at temperatures up to 175°C in a FLANGE MOUNT package style.
IRG4BC30UPBF
IRG4BC30UPBF by Infineon is an N-CHANNEL IGBT with 600V VCE, 23A IC, and 100W Ptot. It has a toff of 320ns and tf of 150ns, ideal for POWER CONTROL applications. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 220 A; Package Body Material: PLASTIC/EPOXY; Case Connection: ISOLATED;
IRG4BC30KDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 28 A; Package Style (Meter): FLANGE MOUNT;
SKM200GB126D
Semikron International
SKM200GB126D by Semikron is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.15V, IC of 260A, and toff of 650ns. Ideal for POWER CONTROL applications due to its high voltage rating of 1200V and fast ton at 300ns.
IKW40N60H3FKSA1
IKW40N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 249ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 175°C in a PLASTIC/EPOXY package style.
IXYN82N120C3H1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 105 A; Terminal Form: UNSPECIFIED;
F3L75R12W1H3B27BOMA1
Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.
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NGTD13T120F2WP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-XUUC-N2; Package Body Material: UNSPECIFIED;
NGTD13T65F2SWK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: UNSPECIFIED; Package Shape: SQUARE;
NGTD13T65F2WP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;
NGTD14T65F2SWK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-XUUC-N3; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: UPPER;
NGTD14T65F2WP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Package Body Material: UNSPECIFIED; Terminal Position: UPPER;
NGTD17T65F2SWK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Maximum Gate-Emitter Voltage: 20 V; JESD-30 Code: R-XUUC-N3;
NGTD17T65F2WP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Terminal Form: NO LEAD; No. of Elements: 1;
NGTD20T120F2SWK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Package Style (Meter): UNCASED CHIP;
NGTD20T120F2WP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED; JESD-30 Code: R-XUUC-N2;
NGTD21T65F2SWK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Transistor Element Material: SILICON;
NGTD21T65F2WP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
NGTD23T120F2SWK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-XUUC-N2; Maximum Collector-Emitter Voltage: 1200 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NGTD23T120F2WP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Package Body Material: UNSPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
NGTD28T65F2SWK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Package Body Material: UNSPECIFIED; Transistor Application: MOTOR CONTROL;
NGTD28T65F2WP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Minimum Operating Temperature: -55 Cel;
NGTD30T120F2SWK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum VCEsat: 2.4 V; Package Style (Meter): UNCASED CHIP; No. of Terminals: 2;
NGTD30T120F2WP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Minimum Operating Temperature: -55 Cel;
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