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NGTD28T65F2SWK

Onsemi

NGTD28T65F2SWK by Onsemi

NGTD28T65F2SWK by Onsemi is an N-CHANNEL IGBT for MOTOR CONTROL applications. It features a Max VCEsat of 2V, Max VGE of 20V, and Max VCE of 650V. With a temperature range from -55 °C to 175°C, this SINGLE configuration transistor is ideal for surface mount designs.

Median Price

$0.800

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 841 parts In-Stock

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USA . 841 parts In-Stock

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Vyrian

USA . 2,161 parts In-Stock

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Flip Electronics

USA . 841 parts In-Stock

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Digiode

USA . 700 parts In-Stock

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Corohmni

South Africa . 91 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 5,019 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 2,033 parts In-Stock

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SupplyDigital Components

Austria . 2,005 parts In-Stock

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UHIMA Technologies

Türkiye . 927 parts In-Stock

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Kulean Microsystems

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Overview

Unleash the power of innovation with the NGTD28T65F2SWK by Onsemi. As a leader in the industry, Onsemi delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are perfect for motor control applications. With a maximum collector-emitter voltage of 650V and a maximum VCEsat of just 2V, this N-channel transistor offers unmatched performance and efficiency. Say goodbye to overheating and hello to smooth operation with the NGTD28T65F2SWK. Elevate your projects and experience the difference with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their low on-state voltage drop and high switching speed, making them efficient for motor control applications.

Configuration: SINGLE

Single configuration IGBTs are easier to control and integrate into motor control circuits compared to parallel configurations.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, ensuring optimal performance and efficiency in controlling motors.

Surface Mount: YES

Surface mount IGBTs are easy to mount on circuit boards, saving space and simplifying the manufacturing process.

Maximum VCEsat: 2 V

Low VCEsat means lower power dissipation and higher efficiency in motor control applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on circuit boards and easy integration into motor control systems.

Terminal Form: NO LEAD

No lead terminals eliminate the need for soldering, simplifying the assembly process and reducing potential points of failure.

No. of Terminals: 3

Three terminals provide flexibility in circuit design and easy connection to external components in motor control systems.

Package Style (Meter): UNCASED CHIP

Uncased chip package style allows for direct thermal contact, improving heat dissipation and overall reliability in motor control applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance even in demanding motor control environments.

Maximum Collector-Emitter Voltage: 650 V

High maximum VCE voltage rating allows for robust operation and protection against voltage spikes in motor control circuits.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material known for its high efficiency and performance in power electronics.

Maximum Gate-Emitter Voltage: 20 V

High maximum gate-emitter voltage allows for effective gate control and reliable switching performance in motor control applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures that the IGBT can operate even in extreme cold conditions without compromising performance.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Optimal gate-emitter threshold voltage for efficient switching and control of the IGBT in motor control applications.

Terminal Position: UPPER

Upper terminal position provides easy access for connections and simplifies the design and layout of motor control circuits.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGTD28T65F2SWK attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUUC-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

NGTD28T65F2SWK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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