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NGTD21T65F2SWK

Onsemi

NGTD21T65F2SWK by Onsemi

NGTD21T65F2SWK by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 1.9V, and 20V max gate-emitter voltage. Ideal for power control applications due to its single configuration and operating temperature range of -55 °C to 175°C. Suitable for surface mount installations with a square package shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,143 parts In-Stock

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Digiode

USA . 2,426 parts In-Stock

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2,426

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Distributors (Availability)

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.405

100+ parts

$0.369

1k+ parts

$0.332

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40

$0.405

$0.369

$0.332

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AZTECH Wire

Italy . 798 parts In-Stock

1+ parts

$8.900

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798

$8.900

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Kulean Microsystems

USA . 6,505 parts In-Stock

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6,505

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Problanco Electronics

Mexico . 5,327 parts In-Stock

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5,327

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Corphita

USA . 1,542 parts In-Stock

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TANS Electronics

Latvia . 1,411 parts In-Stock

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1,411

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SupplyDigital Components

Austria . 1,084 parts In-Stock

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UHIMA Technologies

Türkiye . 700 parts In-Stock

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700

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Corohmni

South Africa . 72 parts In-Stock

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Overview

Experience power control like never before with the NGTD21T65F2SWK by Onsemi. As a leading manufacturer in the field of Insulated Gate Bipolar Transistors (IGBT), Onsemi delivers top-quality products that guarantee reliability and efficiency. Whether you're looking to enhance your power control applications or boost performance in your electronics, this N-CHANNEL transistor offers unparalleled value and benefits. Say goodbye to compromises and hello to seamless power management with the NGTD21T65F2SWK.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL polarity offers low ON-state voltage drop and high switching speed, making it suitable for high power applications.

Configuration: SINGLE

Single configuration simplifies circuit design and helps in reducing overall system cost.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring efficient and reliable performance.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and improving reliability.

Maximum VCEsat: 1.9 V

Low maximum VCEsat value indicates lower power dissipation and improved efficiency in power control applications.

Package Shape: SQUARE

Square package shape provides better thermal management and mechanical stability compared to other shapes, enhancing overall device reliability.

Terminal Form: NO LEAD

No lead terminals offer better heat dissipation and reduced parasitic effects, ensuring better performance under high power conditions.

No. of Terminals: 3

3 terminals allow for simplified circuit connections and better control over power distribution within the device.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers flexibility in mounting options and allows for better thermal management in high power applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance over a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 650 V

High maximum collector-emitter voltage rating allows for use in high voltage applications, providing greater design flexibility.

Transistor Element Material: SILICON

Silicon material provides good temperature performance and high breakdown voltage, making it suitable for power control applications.

Maximum Gate-Emitter Voltage: 20 V

High maximum gate-emitter voltage rating ensures reliable gate control and minimizes the risk of failure due to overvoltage conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in extreme cold conditions without compromising performance.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Maximum gate-emitter threshold voltage ensures proper switching characteristics and minimizes the risk of false triggering.

Terminal Position: UPPER

Upper terminal position allows for convenient circuit layout and easier access during assembly and maintenance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGTD21T65F2SWK attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

S-XUUC-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

1.9 V

Trade Compliance

NGTD21T65F2SWK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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