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FGD2736G3-F085

Onsemi

FGD2736G3-F085 by Onsemi

Onsemi's FGD2736G3-F085 is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.65V, collector current of 21A, and can operate in temperatures ranging from -40 to 175 °C. This surface-mount transistor features a rectangular package shape with gull wing terminals.

Median Price

$1.004

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 88 parts In-Stock

1+ parts

$2.450

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88

$2.450

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Flip Electronics (Authorized)

USA . 17,500 parts In-Stock

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17,500

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Rochester

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

$0.986

1k+ parts

$0.818

10k+ parts

$0.729

15,000

-

$0.986

$0.818

$0.729

Farnell

UK . 15,000 parts In-Stock

1+ parts

-

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$0.707

15,000

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$0.707

Verical

USA . 15,000 parts In-Stock

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-

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$1.022

10k+ parts

$0.912

15,000

-

-

$1.022

$0.912

Distributors (In-Stock)

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Digiode

USA . 1,317 parts In-Stock

1+ parts

$0.768

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1,317

$0.768

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Flip Electronics

USA . 17,500 parts In-Stock

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17,500

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Vyrian

USA . 7,120 parts In-Stock

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Corohmni

South Africa . 90 parts In-Stock

1+ parts

$0.707

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90

$0.707

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Corphita

USA . 1,370 parts In-Stock

1+ parts

$0.727

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1,370

$0.727

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Microchip USA

USA . 9,056 parts In-Stock

1+ parts

$4.864

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9,056

$4.864

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Native Components

USA . 117 parts In-Stock

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$5.390

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117

$5.390

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Authorized Procurement Solutions

USA . 50,000 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,900 parts In-Stock

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15,900

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Continental Prestige Electronics

USA . 15,000 parts In-Stock

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$0.707

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$0.707

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TANS Electronics

Latvia . 2,253 parts In-Stock

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Northwest PG Solutions

USA . 1,440 parts In-Stock

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$5.282

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1,440

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$5.282

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SupplyDigital Components

Austria . 1,313 parts In-Stock

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Kulean Microsystems

USA . 1,126 parts In-Stock

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Problanco Electronics

Mexico . 833 parts In-Stock

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UHIMA Technologies

Türkiye . 648 parts In-Stock

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648

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Overview

Unleash the power of innovation with the FGD2736G3-F085 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability you can trust. The FGD2736G3-F085 falls under the category of Insulated Gate Bipolar Transistors (IGBT) and is designed for automotive ignition applications. With features like a built-in TVS diode and resistor, this product offers exceptional performance and protection. Experience seamless operation and optimal efficiency with this cutting-edge technology. Elevate your projects with the FGD2736G3-F085 and witness the difference it makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for automotive applications where it may be exposed to harsh environments.

Polarity or Channel Type: N-CHANNEL

Allows for efficient control and switching in automotive ignition systems.

Maximum VCEsat: 1.65 V

Low saturation voltage helps in minimizing power loss and improving efficiency in automotive ignition applications.

Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

Built-in TVS diode and resistor protect the transistor and the circuit from voltage spikes and overloads in automotive ignition systems.

Maximum Operating Temperature: 175 °C

Capable of operating at high temperatures commonly found in automotive environments, ensuring reliable performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGD2736G3-F085 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

360 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.2 V

Maximum Gate-Emitter Voltage:

10 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

7000 ns

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

30000 ns

Nominal Turn Off Time (toff):

6300 ns

Maximum Turn On Time (ton):

11000 ns

Nominal Turn On Time (ton):

3900 ns

Maximum VCEsat:

1.65 V

Trade Compliance

FGD2736G3-F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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