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FGD2736G3-F085V

Onsemi

FGD2736G3-F085V by Onsemi

Onsemi's FGD2736G3-F085V is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.65V, collector current of 37.5A, and operating temperature range from -40 to 175 °C. This surface-mount transistor has a package style of small outline and meets AEC-Q101 standards.

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Overview

Discover the power and reliability of the FGD2736G3-F085V by Onsemi, an Insulated Gate Bipolar Transistor designed for automotive ignition applications. With a single configuration including a built-in TVS diode and resistor, this N-channel transistor offers superior performance and durability. Manufactured with high-quality materials and meeting AEC-Q101 standards, this product guarantees a seamless operation in extreme temperatures ranging from -40 °C to 175°C. Trust Onsemi to deliver cutting-edge technology that ensures optimal efficiency and safety for your automotive systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection to the internal components, making the product suitable for automotive applications where robustness is necessary.

Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

Having a built-in TVS diode and resistor simplifies the circuit design and enhances the protection of the IGBT, making it more convenient and efficient for automotive ignition applications.

Maximum Power Dissipation (Abs): 150 W

With a high maximum power dissipation of 150W, the IGBT can handle high power loads effectively, ensuring reliable performance in automotive ignition systems.

Maximum Turn On Time (ton): 11000 ns

The fast turn-on time of 11000 ns ensures quick switching speeds, improving the efficiency and response time of the IGBT in automotive ignition applications.

Maximum Collector-Emitter Voltage: 330 V

The high maximum collector-emitter voltage rating of 330V allows the IGBT to withstand high voltage spikes in automotive ignition systems, ensuring reliable operation under varying conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGD2736G3-F085V attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

330 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.2 V

Maximum Gate-Emitter Voltage:

10 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Maximum Rise Time (tr):

7000 ns

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

30000 ns

Nominal Turn Off Time (toff):

6300 ns

Maximum Turn On Time (ton):

11000 ns

Nominal Turn On Time (ton):

3900 ns

Maximum VCEsat:

1.65 V

Trade Compliance

FGD2736G3-F085V Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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